TMS320C80
Abstract: XDS510 XDS510WS
Text: TMS320C8x Workstation Emulator Installation Guide 1997 Digital Signal Processing Solutions Printed in U.S.A., May 1997 2617735-9741 revision C SPRU116B TMS320C8x Workstation Emulator Installation Guide Literature Number SPRU116B 2617735-9741 revision C May 1997
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TMS320C8x
SPRU116B
TMS320C80
XDS510
XDS510WS
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XDS510WS
Abstract: TMS320C80 XDS510
Text: TMS320C8x Workstation Emulator Installation Guide 1997 Digital Signal Processing Solutions Printed in U.S.A., May 1997 2617735-9741 revision C SPRU116B TMS320C8x Workstation Emulator Installation Guide Literature Number SPRU116B 2617735-9741 revision C May 1997
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TMS320C8x
SPRU116B
XDS510WS
TMS320C80
XDS510
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TMS320C2XX C Language Tools
Abstract: C209 XDS510 XDS510WS ST1480
Text: TMS320C2xx Workstation Emulator Installation Guide 1995 Microprocessor Development Systems Printed in U.S.A., September 1995 D412004-9741 revision * SPRU153 TMS320C2xx Workstation Emulator Installation Guide SPRU153 September 1995 Printed on Recycled Paper
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TMS320C2xx
D412004-9741
SPRU153
TMS320C2XX C Language Tools
C209
XDS510
XDS510WS
ST1480
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XDS510WS
Abstract: XDS510 C209
Text: TMS320C2xx Workstation Emulator Installation Guide 1995 Microprocessor Development Systems Printed in U.S.A., September 1995 D412004-9741 revision * SPRU153 TMS320C2xx Workstation Emulator Installation Guide SPRU153 September 1995 Printed on Recycled Paper
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TMS320C2xx
D412004-9741
SPRU153
XDS510WS
XDS510
C209
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XDS510PP
Abstract: XDS510 XDS510PP datasheet XDS510WS TMS370C8 SPNU070A XDS51X XDS510PP MPSD
Text: XDS51x Emulator Installation Guide 1996 Microprocessor Development Systems Printed in U.S.A., January 1996 D411002-9741 revision A SPNU070A XDS51x Emulator Installation Guide SPNU070 January 1996 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any
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XDS51x
D411002-9741
SPNU070A
SPNU070
XDS510PP
XDS510
XDS510PP datasheet
XDS510WS
TMS370C8
SPNU070A
XDS510PP MPSD
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UV led 254 nm
Abstract: UV diode 280 nm photo diode uv 254 nm uv LED UV LED 280 nm UV diode 254 nm
Text: 3mm Infrared Discrete LED Silicon PIN Photo Diode NEW Dialight 521-9741 Features 4.85 [.191] .56 [.022] .64 [.025] 4.1 [.161] 3.9 [.153] 3.8 [.150] .50 [.020] 3.0 [.168] • Short Switching Time • High Spectral Sensitivity • Daylight Filtered for Near Infrared Range
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100mA,
MIL-STD-202E,
UV led 254 nm
UV diode 280 nm
photo diode uv
254 nm uv LED
UV LED 280 nm
UV diode 254 nm
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KVM SWITCH
Abstract: TMS320C80 XDS510 XDS510WS
Text: TMS320C8x Workstation Emulator Installation Guide Literature Number SPRU116B 2617735-9741 revision C May 1997 Printed on Recycled Paper Running Title—Attribute Reference IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any
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TMS320C8x
SPRU116B
XDS510WS
KVM SWITCH
TMS320C80
XDS510
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transistor M 9741
Abstract: binary Weighted resistor ladder bipolar dac binary Weighted resistor ladder dac analog memory R-2R resistor HARRIS SEMICONDUCTOR Mancini signal path designer
Text: Harris Semiconductor No. AN9741 Harris Linear July 1997 Basic DACs for Electronic Engineers Author: Ronald Mancini Why and Where are DACs Used? 2 EQ. 1 Notice that 206, in the decimal number system, is made up from three sums: each sum is based on a power of 10, and
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AN9741
1-800-4-HARRIS
transistor M 9741
binary Weighted resistor ladder bipolar dac
binary Weighted resistor ladder dac
analog memory
R-2R resistor
HARRIS SEMICONDUCTOR
Mancini
signal path designer
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binary Weighted resistor ladder dac
Abstract: analog memory Mancini binary Weighted resistor ladder bipolar dac agc circuit use op amp signal path designer r2r resistor ladder
Text: No. AN9741 Intersil Linear July 1997 Basic DACs for Electronic Engineers Author: Ronald Mancini Why and Where are DACs Used? 2 1 EQ. 1 206 = 2 ( 10 ) + 0 ( 10 ) + 6 ( 10 ) The name is digital-to-analog converter, and the function of a DAC, as the name implies, is to convert digital signals into
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AN9741
binary Weighted resistor ladder dac
analog memory
Mancini
binary Weighted resistor ladder bipolar dac
agc circuit use op amp
signal path designer
r2r resistor ladder
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Untitled
Abstract: No abstract text available
Text: No. AN9741 Intersil July 1997 Basic DACs for Electronic Engineers Author: Ronald Mancini Why and Where are DACs Used? 2 1 EQ. 1 206 = 2 ( 10 ) + 0 ( 10 ) + 6 ( 10 ) The name is digital-to-analog converter, and the function of a DAC, as the name implies, is to convert digital signals into
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AN9741
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IRFIBC44LC
Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
Text: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219
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IRF5905
Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES
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O-220/D2PAK
IRF5905
MOSFET IRF 9732
transistor equivalent irf510
IRF3710 equivalent
IRFz44n equivalent
IRF 9732
irf2807 equivalent
IRF3205 application
IRD110
HTGB
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Corning 5-58
Abstract: AJ2255 SAT3000 AJ2145A QUANTA
Text: 8854 Photomultiplier 129-mm 5-inch Diameter, 14-stage QUANTACONTM Type Having a Bialkali Photocathode and HighGain Gallium-Phosphide Dynodes • • • • • • • • Extremely High Gain Gallium Phosphide, GaP (Cs), First Dynode Low Dark Noise at 22 °C Efficiency:
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129-mm
14-stage
114-mm
Corning 5-58
AJ2255
SAT3000
AJ2145A
QUANTA
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P1D8
Abstract: AD9747 AD9747-EBZ1 AD9745 AD9741 AD9743 ADL5370 AVDD33 AD9747BCPZ d974
Text: Dual 8-/10-/12-/14-/16-Bit 250 MSPS Digital-to-Analog Converters AD9741/AD9743/AD9745/AD9746/AD9747 FEATURES GENERAL DESCRIPTION High dynamic range, dual DACs Low noise and intermodulation distortion Single carrier WCDMA ACLR = 80 dBc @ 61.44 MHz IF Innovative switching output stage permits useable outputs
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8-/10-/12-/14-/16-Bit
AD9741/AD9743/AD9745/AD9746/AD9747
10-bit
72-Lea
72-Lead
P1D8
AD9747
AD9747-EBZ1
AD9745
AD9741
AD9743
ADL5370
AVDD33
AD9747BCPZ
d974
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AD9747
Abstract: CP-72-1 P1D8 AD9741 AD9743 ADL5370 AVDD33 AD9746BCPZ K 347
Text: Dual 8-/10-/12-/14-/16-Bit 250 MSPS Digital-to-Analog Converters AD9741/AD9743/AD9745/AD9746/AD9747 FEATURES GENERAL DESCRIPTION High dynamic range, dual DACs Low noise and intermodulation distortion Single carrier WCDMA ACLR = 80 dBc @ 61.44 MHz IF Innovative switching output stage permits useable outputs
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8-/10-/12-/14-/16-Bit
AD9741/AD9743/AD9745/AD9746/AD9747
10-bit
72-Lea
72-Lead
AD9747
CP-72-1
P1D8
AD9741
AD9743
ADL5370
AVDD33
AD9746BCPZ
K 347
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d880
Abstract: transistor d880 d880 datasheet D880 pin out DL-0159 XDR Rambus d880 y sony x35 D870 d880 transistor
Text: Title Page PowerXCell 8i CMOS SOI 65 nm Hardware Initialization Guide Version 1.2 December 8, 2008 Copyright and Disclaimer Copyright International Business Machines Corporation 2007, 2008 All Rights Reserved Printed in the United States of America December 2008
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Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide
Abstract: Cell Broadband Engine Hardware Initialization Guide transistor d880 t d880 DL-0159 DL-0178 d880 transistor toshiba f630 Rambus XDR cell broadband
Text: Title Page Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide Version 1.01 June 8, 2007—Preliminary Copyright and Disclaimer Copyright International Business Machines Corporation, Sony Computer Entertainment Incorporated, Toshiba Corpora-
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2007--Preliminary
DL-0178)
Cell Broadband Engine CMOS SOI 65 nm Hardware Initialization Guide
Cell Broadband Engine Hardware Initialization Guide
transistor d880
t d880
DL-0159
DL-0178
d880 transistor
toshiba f630
Rambus XDR
cell broadband
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transistor c5578
Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Text: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012
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MCAT-2003
transistor c5578
BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6
awm style 20233
7700A transformer
Belden 138777
awm 2464 vw-1 300v shield cable specification
transistor nec 8772
yokogawa DCS
finder type 81.11
C5611 Transistor
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Untitled
Abstract: No abstract text available
Text: SBI Bus Serializer ASSP Telecom Standard Product Data Sheet Released PM8610 SBS SBI Bus Serializer Data Sheet Proprietary and Confidential Released Issue No. 5: June 2002 Proprietary and Confidential to PMC-Sierra, Inc., and for its customers’ internal use.
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PM8610
PMC-2000168,
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Untitled
Abstract: No abstract text available
Text: 9: 45 AM SBI Bus Serializer ASSP Telecom Standard Product Data Sheet Released 3M ar ch ,2 01 2 01 :0 PM8610 co n Fr id ay ,2 SBS of Pa rtm in er In SBI Bus Serializer Proprietary and Confidential Released Issue No. 5: June 2002 Do wn lo ad ed [c on tro lle
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PM8610
PMC-2000168,
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EP 950
Abstract: No abstract text available
Text: 3mm Infrared Discrete LED Silicon PIN Photo Diode Dîalîght 521-9741 Features [.022] 5] I .50 [.020] • • • • • [.150] _L_ [.059] Short Switching Time High Spectral Sensitivity Daylight Filtered for Near Infrared Range Low Capacitance High Reliability With No Testable
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-55to+
100mA,
MIL-STD-202E,
EP 950
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pj 54 diode
Abstract: lk950
Text: Dîalight Infrared Discrete LED Silicon PIN Photo Diode 521-9741 Features • Short Switching Time • High Spectral Sensitivity • Daylight Filtered for Near Infrared Range • Low Capacitance • High Reliability With No Testable Degradation A B SO LUTE M A X IM U M RA TING S TA=25°C
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100mA,
MIL-STD-202E,
pj 54 diode
lk950
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maxim 9694
Abstract: ULS-2803 ULS2803R-883 ULS-2823 darlington array 2804 LS 2822 ULS-2802 ULS-2804 ULS-2805 ULS-2812
Text: ULS-2801H/R THROUGH ULS-2825H/R <01SPRAGUE THE MARK OF RELIABILITY Integrated Circuits I SERIES ULS-2800H AND ULS-2800R HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS MIL-STD-883 Compliant S i FEATURES • • • • • • • TTL, DTL, PMOS, or CMOS Compatible Inputs
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ULS-2801H/R
ULS-2825H/R
ULS-2800H
ULS-2800R
MIL-STD-883
MIL-STD-883,
maxim 9694
ULS-2803
ULS2803R-883
ULS-2823
darlington array 2804
LS 2822
ULS-2802
ULS-2804
ULS-2805
ULS-2812
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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