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    Untitled

    Abstract: No abstract text available
    Text: PD - 97355B IRGS4062DPbF IRGSL4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • C Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 97355B IRGS4062DPbF IRGSL4062DPbF EIA-418.

    IRGSL4062DPBF

    Abstract: 22 diode
    Text: PD - 97355B IRGS4062DPbF IRGSL4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 97355B IRGS4062DPbF IRGSL4062DPbF Low14 EIA-418. IRGSL4062DPBF 22 diode