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    IRGB4060D

    Abstract: IRF1010 CT4-15
    Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


    Original     		PDF 97073B IRGB4060DPbF O-220AB IRGB4060D IRF1010 CT4-15

    Untitled

    Abstract: No abstract text available
    Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 8.0A, TC = 100°C Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C


    Original     		PDF 97073B IRGB4060DPbF O-220AB

    IRF1010

    Abstract: 8A2021
    Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA


    Original     		PDF 97073B IRGB4060DPbF IRF1010 O-220AB IRF1010 8A2021