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    97 G TRANSISTOR IC Search Results

    97 G TRANSISTOR IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    97 G TRANSISTOR IC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book PDF

    SG2844D

    Abstract: SG1844 SG1845 SG3844 SG3844N SG3845N nc 555 analog data*book 1r2 1845
    Text: LIN D O C #: 1844 SG1844/SG1845 Series CURRENT MODE PWM CONTROLLER T H E I N F I N I T E P O W E R I O F P N N O VA T I O N R O D U C T I O N DESCRIPTION The SG1844/45 family of control ICs provides all the necessary features to implement off-line fixed frequency,


    Original     		SG1844/SG1845 SG1844/45 SG1844/45 SG2844D SG1844 SG1845 SG3844 SG3844N SG3845N nc 555 analog data*book 1r2 1845 PDF

    DIL28

    Abstract: circuit diagram for 3 wire transducer inductive sensor oscillator circuit AM337 AM337-1 AM337-2
    Text: SWITCHING INTERFACE IC AM337 FEATURES GENERAL DESCRIPTION • Wide Supply Voltage Range 2.1V 9V to 35V • 3 (4)–Wire and 2–Wire Applications • Simultaneous Outputs NO and NC • 1 Point and 2 Point Switch • PNP– and NPN–Type Available • Three Comparators for Switch and


    Original     		AM337 AM337 DIL28 circuit diagram for 3 wire transducer inductive sensor oscillator circuit AM337-1 AM337-2 PDF

    bfy90

    Abstract: No abstract text available
    Text: BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB typ @ 500 MHz, 5v, 2.0 mA, • 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 • 1 Power Gain, GPE = 19 dB (typ) @ 200 MHz


    Original     		BFY90 To-72 bfy90 PDF

    Buck-Boost Converter advantages

    Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
    Text: ICs: SMPS, CoolSET TM – Discretes: CoolMOS TM, thinQ! TM Power Management & Supply AC/DC Selection Guide www.infineon.com/power May 2006 Introduction T O D A Y ’ S M O D E R N L I F E S T Y L E leads to a fast-growing energy requirement as more and more people are able to afford electronic equipment.


    Original     		B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor PDF

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3 PDF

    smd transistor marking A10

    Abstract: qml-38534 5962-9562408HNC smd transistor marking A11 smd transistor marking A14 TRANSISTOR SMD MARKING CODE a7 j smd transistor marking A18
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added note to paragraph 1.2.2 and table I regarding the 4 transistor design. Paragraph 1.3; changed the power dissipation for device types 05-09 from 2.9 W max to 3.3 W max. Table I; changed the ICC max limit


    Original     		WS512K32M-25G4Q, WS512K32M-25G4TQ smd transistor marking A10 qml-38534 5962-9562408HNC smd transistor marking A11 smd transistor marking A14 TRANSISTOR SMD MARKING CODE a7 j smd transistor marking A18 PDF

    ge traction motor

    Abstract: No abstract text available
    Text: DIM400XSM65-K000 Single Switch IGBT Module DS5808-1.0 November 2004 FEATURES • High Thermal Cycling Capability • Soft Punch Through Silicon • Isolated MMC Base with AlN Substrates KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN23659)


    Original     		DIM400XSM65-K000 DS5808-1 LN23659) DIM400XSM65-K000 ge traction motor PDF

    automotive ignition tip162

    Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.


    Original     		BU323A BU323A 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B automotive ignition tip162 BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326 PDF

    ST T4 3580

    Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc


    Original     		MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714 PDF

    tip122 tip127 audio amp

    Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc


    Original     		TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 220AB tip122 tip127 audio amp TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS PDF

    transistor gfs

    Abstract: 2N5116 J176 2N3993 2N3993A IFP44 J174 J175 J177 P1086
    Text: G 30 9-97 PJ99 Process SILICON JU N C T IO N FIELD-EFFECT TRANSISTOR • GENERAL PURPOSE AMPLIFIER • ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, T s 10 mA +150°C -65°C to +175°C


    OCR Scan     		IFP44 P1086, P1087 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 transistor gfs J176 2N3993 IFP44 J174 J175 J177 P1086 PDF

    LC-1

    Abstract: SY SOT23
    Text: "SuperSOT" SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 - APRIL 97 FEATURES * 625m W POWER DISSIPATION H ighest c u rre n t c a p a b ility SOT23 D a rlin g to n Very h igh hFE - sp e cifie d at 2A 5K m in im u m - ty p ic a lly 600 at 5A COM PLEM ENTARY TYPE - F M M T734


    OCR Scan     		300us. FMMT634 LC-1 SY SOT23 PDF

    westinghouse transistors

    Abstract: WT440 WT4311 WT4334 WT4411 WT4434 WT4400 Westcode Semiconductors transistor WT-440 WT transistor
    Text: 97 0 99 55 WESTCODE SE MI CO ND UC TO RS iIESTCODL S E M I C O N D U C T O R S 34 34C 01 73 L DE”| t17Din S 5 D T~ DDD1731 □ |~ Technical W ESTCODE SEMICONDUCTORS Publication WT43/4400 Issue 1 A u g u st 1981 High Power Transistor Types WT4311 to W T4334 and WT4411 to WT4434


    OCR Scan     		0173L DD01731 WT43/4400 WT4311 WT4334 WT4411 WT4434 0-160V 0-140V 0-120V westinghouse transistors WT440 WT4434 WT4400 Westcode Semiconductors transistor WT-440 WT transistor PDF

    2N1566

    Abstract: No abstract text available
    Text: TYPE 2N1566 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 731 1 9 5 8 , M A R C H 1 97 3 FOR G E N E R A L PURPOSE A M P L IF IE R APPLICATIO N S • V B R C E O • ■ - 6 0 V Mi n • hpE - . - 60 to 200 mechanical data •absolute maximum ratings at 2 5 °C free-air temperature (unless otherwise noted)


    OCR Scan     		2N1566 PDF

    175-200MHZ

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M67730L 175-200MHZ, 12.5V, 30W, FM MOBILE RADIO BLOCK DIAGRAM P IN : P in RF INPUT <g VCC1 U t. DC SUPPLY 2 n d DC SUPPLY RF OUTPUT FIN @ VCC2 @PO ®GND ABSOLUTE MAXIMUM RATINGS Tc = 2 5 unless otherwise noted) Symbol Vcc Icc


    OCR Scan     		M67730L 175-200MHZ, 175-200MHZ PDF

    TC9312N

    Abstract: ic 763 transistor 17609 transistor 7721 17610 TA7780BN IPL30 T-77 Q45 IC transistor sb 7721
    Text: TOSHIBA-, ELECTRONIC 02 9 09 724 7 TOSHIBA. i>Ë| 10=17247 D017bDl H |~~ ELECTRONIC 02E 1 176 Öl : - D T - 7 7 -21 TA7780BN MECHANISM DRIVER FOR IC LOGIC CONTROL Unit in mm The TA7780BN is a mechanism driver IC designed for IC logic control, which is especially suitable for


    OCR Scan     		TA7780BN TA7780BN TC9312N V14-Vlf TC9312N ic 763 transistor 17609 transistor 7721 17610 IPL30 T-77 Q45 IC transistor sb 7721 PDF

    TRANSISTOR C 557 B

    Abstract: TRANSISTOR N3
    Text: Non-Pulse M odulated Features • E a s y o p e ra tio n m o n ito r in g w ith red L E D in d ic a to r ■ R e s p o n s e fre q u e n c y as h ig h a s 1 K H z ■ W id e o p e ra tin g v o lta g e , 5 -2 4 V D C ■ A m p lifie r o u tp u t ca n be c o n n e c te d d ire c tly to P L C , T T L a n d re lays


    OCR Scan     		EE-SY671 EE-SY672 TRANSISTOR C 557 B TRANSISTOR N3 PDF

    Untitled

    Abstract: No abstract text available
    Text: E R IC SSO N í PTB 20193 60 Watts, 1 . 8 - 1 . 9 GHz Cellular Radio RF Po we r Transistor D escription The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP


    OCR Scan     		PDF

    bel187

    Abstract: bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904
    Text: BHARAT ELEK/SEHICOND DI 47E D • 1 4 3 5 3 ‘iä G O G G Q 1 G Tifi ■ B E LI I VCE Si Device No VCEO Volts min VCBO Volts mm V eb o Volts min hFE at b<as mm /max. Ic mA VCE Volts 1CM mA max P lo t mW ICBO nA max typ S a t V otts typ Cob ts p l- ns typ


    OCR Scan     		27min. 37min. 35friin. 50min 50min. 40min 40min. bel187 bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904 PDF

    bms 97

    Abstract: 37265
    Text: S IE M E N S BGA427 Si-M M IC-Am plifier in SIEGET 25-Technology Preliminary Data # Cascadable 50 £2-Gain Block # # Unconditionally stable Gain |s21f =18.5 dB at 1.8 G H z appl.1 Gain |s21f =22 dB at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z # (V D=3V, lD=9.4m A)


    OCR Scan     		BGA427 25-Technology Q62702-G0067 CP5056G5 bms 97 37265 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic U4254BM S e m i c o n d u c t o r s Low-Noise AM/FM Antenna Impedance Matching IC Description The U4254BM is an integrated low-noise AM/FM antenna impedance matching circuit in BICMOS technology. The device is designed in particular for car application and is suitable for windscreen and roof


    OCR Scan     		U4254BM U4254BM U4254B D-74025 01-Jul-97 PDF

    transistor k 385

    Abstract: IR2C36
    Text: 7-Unit 500mA Transistor Array IR2C36 IR2C36 7-Unit 500mA Transistor Array • Description Pin Connections The IR 2 C 3 6 is a 7 -circuit d rive r IC. Incorporat­ ing an overshort preventive clamp diode for out put, this transistor a rra y can d irectly d rive an in ­


    OCR Scan     		500mA IR2C36 IR2C36 --200mA -400mA transistor k 385 PDF

    2SC2932

    Abstract: RF POWER TRANSISTOR NPN R27 transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2932 NPN EPITAXIAL PLANAR T YP E DESCRIPTION 2 S C 2 9 3 2 is a s ilic o n NPN e p ita x ia l p la n a r ty p e tra n s is to r spe­ OUTLINE DRAWING D im e n s io n s in m m c if ic a lly designed fo r p o w e r a m p lifie rs a p p lic a tio n s in 8 0 0 —9 4 0


    OCR Scan     		2SC2932 2SC2932 RF POWER TRANSISTOR NPN R27 transistor PDF