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    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA

    NT5CB256

    Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CB256 NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8

    samsung ddr3

    Abstract: DDR3 DIMM 240 pinout DDR3-1066 DDR3-1333 K4B1G16 Design Guide for DDR3-1066 k4b1g08 K4B1G0846D K4B1G0446D DDR3-800-666
    Text: 1Gb DDR3 SDRAM K4B1G04 08/16 46D 1Gb D-die DDR3 SDRAM Specification 82 / 100 FBGA with Pb-free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.


    Original     		PDF K4B1G04 samsung ddr3 DDR3 DIMM 240 pinout DDR3-1066 DDR3-1333 K4B1G16 Design Guide for DDR3-1066 k4b1g08 K4B1G0846D K4B1G0446D DDR3-800-666

    NT5CB256M16bP-DI

    Abstract: NT5CB256M16 NT5CC512M8BN NT5CB512M8BN-CGI NT5CB512M8BN-DI NT5CB256M16BP-DII NT5CB256M16B T14C NT5CC512M8 NT5CC256M16BP
    Text: NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP Speed Bins -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Units tCK Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Clock Frequency


    Original     		PDF NT5CB512M8BN NT5CB256M16BP NT5CC512M8BN NT5CC256M16BP DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 NT5CB256M16bP-DI NT5CB256M16 NT5CB512M8BN-CGI NT5CB512M8BN-DI NT5CB256M16BP-DII NT5CB256M16B T14C NT5CC512M8 NT5CC256M16BP

    Untitled

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ*/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP DDR3-1866 DDR3-2133 x8/78

    K4B2G1646C-HCH9

    Abstract: K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133
    Text: Rev. 1.11, Nov. 2010 K4B2G1646C 2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646C 96FBGA K4B2G1646C-HCH9 K4B2G1646C K4B2G1646C-HCK0 K4B2G1646C-HC K4B2G1646C-HCK 128mx16 ddr3 k4B2G1646 K4B2G16 K4B2G1646C-HCNB DDR3-2133

    NT5CB128m16FP

    Abstract: nt5cb256m8fn NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN / NT5CB128M16FP NT5CC256M8FN / NT5CC128M16FP Feature   Programmable Burst Length: 4, 8  8n-bit prefetch architecture  Output Driver Impedance Control Backward compatible to VDD= VDDQ= 1.5V  Differential bidirectional data strobe


    Original     		PDF NT5CB256M8FN NT5CB128M16FP NT5CC256M8FN NT5CC128M16FP x8/78 NT5CB128M16FP-DI NT5CB128M16FP-EK NT5CC128M16FP-DI NT5CC256M8FN-DI NT5CC128M16FP NT5CC256M8FN-DII NT5CB256M8FN-FL NT5CB256M8F

    K4W2G1646E-BC11

    Abstract: K4W2G1646E-BC1A k4w2g1646 K4W2G1646E
    Text: Rev. 1.01, Aug. 2012 K4W2G1646E 2Gb gDDR3 SDRAM E-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4W2G1646E 96FBGA K4W2G1646E-BC11 K4W2G1646E-BC1A k4w2g1646 K4W2G1646E

    NT5CB256M16

    Abstract: NT5CC256M16 4Gb DDR3 SDRAM nanya ddr3 DDR3 DIMM SPD JEDEC
    Text: 4Gb DDR3 SDRAM B-Die NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP CAS Latency Frequency -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Speed Bins Units tCK Parameter Min. Max. Min.


    Original     		PDF NT5CB512M8BN NT5CB256M16BP NT5CC512M8BN NT5CC256M16BP DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 NT5CB256M16 NT5CC256M16 4Gb DDR3 SDRAM nanya ddr3 DDR3 DIMM SPD JEDEC

    NT5CB256M8bN-cg

    Abstract: calibration of dvm specifications NT5CB128M16BP-DI
    Text: 2Gb DDR3 SDRAM NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP Feature Table 1: CAS Latency Frequency -BE* -CG/CGI* -DI* -EJ* DDR3 L -1066-CL7 DDR3 (L)-1333-CL9 DDR3(L)-1600-CL11 Speed Bins Units DDR3-1866-CL12 Parameter Min. Max. Min. Max. Min. Max.


    Original     		PDF NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP -1066-CL7 -1333-CL9 -1600-CL11 DDR3-1866-CL12 DDR3-1600 DDR3-1866 NT5CB256M8bN-cg calibration of dvm specifications NT5CB128M16BP-DI

    NT5CB128M16FP

    Abstract: NT5CB128M16FP-DI NT5CC128M16FP-DI NT5CB128M NT5CB128M16FP-DII NT5CC256M8FN
    Text: 2Gb DDR3 SDRAM F-Die NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP Feature CAS Latency Frequency Speed Bins -DI/DII* -EJ/EJI* -FK* DDR3 L -1600 DDR3-1866 DDR3-2133 CL11 CL12 CL13 Units Parameter Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency


    Original     		PDF NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP DDR3-1866 DDR3-2133 155es x8/78 NT5CB128M16FP NT5CB128M16FP-DI NT5CC128M16FP-DI NT5CB128M NT5CB128M16FP-DII NT5CC256M8FN

    K4B2G1646Q-BCK0

    Abstract: K4B2G1646q
    Text: Rev. 1.0, Aug. 2013 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA K4B2G1646Q-BCK0 K4B2G1646q

    NT5CB64M16AP-BE

    Abstract: No abstract text available
    Text: NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP 1Gb DDR3 SDRAM A-Die Features • VDD=VDDQ=1.5V ± 0.075V JEDEC Standard Power Supply • Write Leveling • OCD Calibration • 8 internal banks (BA0 - BA2) • Dynamic ODT (Rtt_Nom & Rtt_WR) • Differential clock inputs (CK, CK)


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP NT5CB64M16AP-BE

    Untitled

    Abstract: No abstract text available
    Text: NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP 2Gb DDR3 SDRAM F-Die Feature


    Original     		PDF NT5CB256M8FN/NT5CB128M16FP NT5CC256M8FN/NT5CC128M16FP -1066-CL7 -1333-CL9 -1600-CL11 DDR3-1866-CL12

    NT5CB128M16HP-EK

    Abstract: No abstract text available
    Text: NT5CB128M16HP NT5CC128M16HP 2Gb DDR3 SDRAM H-Die Preliminary Datasheet Feature Table 1: CAS Latency Frequency -BE* -CG -DI* -EK* DDR3 L -1066-CL7 DDR3(L)-1333-CL9


    Original     		PDF NT5CB128M16HP NT5CC128M16HP -1066-CL7 -1333-CL9 -1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CB128M16HP-EK

    K4W1G1646D-EC15

    Abstract: K4W1G1646D-EJ11 K4W1G1646D-EC gDDR3-1800 DDR3 DIMM 240 pinout GDDR3 SDRAM 256Mb JESD51-2 VIH150 SAMSUNG GDDR3 K4W1G1646D
    Text: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.


    Original     		PDF K4W1G1646D K4W1G1646D-EC15 K4W1G1646D-EJ11 K4W1G1646D-EC gDDR3-1800 DDR3 DIMM 240 pinout GDDR3 SDRAM 256Mb JESD51-2 VIH150 SAMSUNG GDDR3 K4W1G1646D

    nt5cb128m16

    Abstract: NT5CB128M16BP-CGI
    Text: NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP 2Gb DDR3 SDRAM B-Die Feature Table 1: CAS Latency Frequency Speed Bins -BE* -CG/CGI* -DI* -EJ* DDR3 L -1066-CL7 DDR3 (L)-1333-CL9 DDR3(L)-1600-CL11 DDR3-1866-CL12 Units Parameter Min. Max. Min. Max. Min.


    Original     		PDF NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP -1066-CL7 78-Balls 96-Balls nt5cb128m16 NT5CB128M16BP-CGI

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Sep. 2012 K4B2G1646E 2Gb E-die DDR3L SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant 1.35V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646E 96FBGA

    NT5CB256M16

    Abstract: NT5CB256m16bp NT5CB512M8BN-DII NT5CC256
    Text: 4Gb DDR3 SDRAM B-Die NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP CAS Latency Frequency -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Speed Bins Units tCK Parameter Min. Max. Min.


    Original     		PDF NT5CB512M8BN NT5CB256M16BP NT5CC512M8BN NT5CC256M16BP DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 NT5CB256M16 NT5CB512M8BN-DII NT5CC256

    H5TQ2G63D

    Abstract: H5TQ2G83DFR
    Text: 2Gb DDR3 SDRAM 2Gb DDR3 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5TQ2G83DFR-xxC H5TQ2G63DFR-xxC H5TQ2G83DFR-xxI H5TQ2G63DFR-xxI * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.09 / Mar. 2012 1 Revision History


    Original     		PDF H5TQ2G83DFR-xxC H5TQ2G63DFR-xxC H5TQ2G83DFR-xxI H5TQ2G63DFR-xxI 96Balls) 125ns. ddr3-1866m ddr3-1600k ddr3-1333h 1066f H5TQ2G63D H5TQ2G83DFR

    K4B2G1646E-BYK0

    Abstract: K4B2G1646E-BYH9 K4B2G16
    Text: Rev. 1.0, Sep. 2012 K4B2G1646E 2Gb E-die DDR3L SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant 1.35V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646E 96FBGA K4B2G1646E-BYK0 K4B2G1646E-BYH9 K4B2G16

    NT5CB256M16CP

    Abstract: NT5CC256M16CP NT5CC256M16CP-DI NT5CC512M8CN DDR3-2133-CL14 NT5CB512M8CN NT5CC512M8CN-DII NT5CB512M8CN-CG NT5CB256M16 NT5CC256M16CP-DII
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -BE* -CG* -DI/DII* -EK* -FL* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Speed Bins Units tCK Parameter Min. Max. Min. Max.


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CC256M16CP NT5CC256M16CP-DI NT5CC512M8CN-DII NT5CB512M8CN-CG NT5CB256M16 NT5CC256M16CP-DII

    NT5CB256M16BP-CG

    Abstract: NT5CB256M16BP-DI
    Text: 4Gb DDR3 SDRAM B­Die NT5CB512M8BN / NT5CB256M16BP NT5CC512M8BN / NT5CC256M16BP CAS Latency Frequency -BE* -CG/CGI* -DI/DII* -EJ* -FK* DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 Speed Bins Units tCK Parameter Min.


    Original     		PDF NT5CB512M8BN NT5CB256M16BP NT5CC512M8BN NT5CC256M16BP DDR3/L-1066-CL7 DDR3/L-1333-CL9 DDR3/L-1600-CL11 DDR3-1866-CL12 DDR3-2133-CL13 NT5CB256M16BP-CG NT5CB256M16BP-DI

    NT5CB256M16

    Abstract: NT5CC256M16 NT5CC256
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CB256M16 NT5CC256M16 NT5CC256