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    H5GQ4H24MFR-R2C

    Abstract: H5GQ2H24AFR-R0C H5GC4H24MFR-T2C H5GQ1H24BFR-R0C H5GQ1H24BFR-T2C H5GC2H24BFR-T2C H5TQ2G63DFR-11c H5GQ2H24AFR-T2C H5TC4G63AFR-11C H5TQ2G63FFR
    Text: Page 1 DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.1GHz 0.9ns H5TQ4G63AFR-N1C FBGA(96ball) 8Bank, 1.5V/ 1.5V Now 1.0GHz (1.0ns) H5TC4G63AFR-N0C FBGA(96ball) 8Bank, 1.35V/ 1.35V Now FBGA(96ball) 8Bank, 1.5V/ 1.5V Now FBGA(96ball) 8Bank, 1.35V/ 1.35V


    Original     		PDF H5TQ4G63AFR-N1C 96ball) H5TC4G63AFR-N0C 256Mx16 H5TC4G63AFR-11C 900MHz H5GQ4H24MFR-R2C H5GQ2H24AFR-R0C H5GC4H24MFR-T2C H5GQ1H24BFR-R0C H5GQ1H24BFR-T2C H5GC2H24BFR-T2C H5TQ2G63DFR-11c H5GQ2H24AFR-T2C H5TC4G63AFR-11C H5TQ2G63FFR

    Untitled

    Abstract: No abstract text available
    Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:


    Original     		PDF M2S1G64CBH4B5P M2S2G64CB88B5N M2S4G64CB8HB5N PC3-8500 PC3-10600 PC3-12800 DDR3-1066/1333/1600 128Mx16 256Mx8

    msi 7267 MOTHERBOARD SERVICE MANUAL

    Abstract: ttl cookbook msi ms 7267 MOTHERBOARD CIRCUIT diagram "0.4mm" bga "ball collapse" height PCF 799 crystal oscillator 8MHz 4 pins smd diode MARKING F5 44C smd TRANSISTOR code marking A7 terminals diagram of smd transistor bo2 cookbook for ic 555
    Text: GTL/GTLP Logic High-Performance Backplane Drivers Data Book Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF GDFP1-F48 -146AA GDFP1-F56 -146AB msi 7267 MOTHERBOARD SERVICE MANUAL ttl cookbook msi ms 7267 MOTHERBOARD CIRCUIT diagram "0.4mm" bga "ball collapse" height PCF 799 crystal oscillator 8MHz 4 pins smd diode MARKING F5 44C smd TRANSISTOR code marking A7 terminals diagram of smd transistor bo2 cookbook for ic 555

    PS8743

    Abstract: SSTU32864A PI74SSTU32864A Q11A Q13A
    Text: PI74SSTU32864A 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer Features Description • PI74SSTU32864A is designed for low-voltage operation, VDD = 1.8V • Supports Low Power Standby Operation • Enhanced Signal Integrity for 1 and 2 Rank Modules


    Original     		PDF PI74SSTU32864A 25-Bit 14-Bit PI74SSTU32864A 10MHz, PS8743 PS8743 SSTU32864A Q11A Q13A

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


    Original     		PDF IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"

    Q1412

    Abstract: ICS97ULP877 ICSSSTUBF32866A Q11A Q13A
    Text: ICSSSTUBF32866A Advance Information Integrated Circuit Systems, Inc. 25-Bit Configurable Registered Buffer for DDR2 Pin Configuration Recommended Application: • DDR2 Memory Modules • Provides complete DDR DIMM solution with ICS97ULP877 • Ideal for DDR2 667, and 800


    Original     		PDF ICSSSTUBF32866A 25-Bit ICS97ULP877 14-bit ICSSSTUA32864 10-0055C ICSSSTUBF32866Az MO-205 Q1412 ICS97ULP877 ICSSSTUBF32866A Q11A Q13A

    ULP877

    Abstract: IDTCSPUA877A MO-205 SSTU32864 ICS97ULP877 ICS98ULPA877A ICSSSTUB32871A D0-D20
    Text: ICSSSTUB32871A Integrated Circuit Systems, Inc. 27-Bit Registered Buffer for DDR2 Recommended Application: • DDR2 Memory Modules • Provides complete DDR DIMM solution with ICS98ULPA877A, ICS97ULP877, or IDTCSPUA877A • Optimized for DDR2 400/533/667 JEDEC 4 Rank


    Original     		PDF ICSSSTUB32871A 27-Bit ICS98ULPA877A, ICS97ULP877, IDTCSPUA877A SSTU32864 ULP877 ULPA877A, IDTCSPUA877A MO-205 SSTU32864 ICS97ULP877 ICS98ULPA877A ICSSSTUB32871A D0-D20

    71WS256NC0BAIAU

    Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics


    Original     		PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS256NC0BAIAU cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002

    VSP6244

    Abstract: hp laptop ac adapter schematics diagram 3 phase dc converter afe circuit diagram igbt omap3530 GPMC NORFLASH klixon 8-S msp430F5438 usart examples ir remote control transmitter ABC T2 vsp6822 STB 2300 HD Streaming IP Set Top Box UCC28070
    Text: 2 Introduction and Table of Contents TI’s Solutions Cover the Entire Video Chain TI has been involved in the video market for more than 25 years. The steps in the video chain span everything from the creation of the original content to the final viewing


    Original     		PDF

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Revised November 2004 74VCX32245 Low Voltage 32-Bit Bidirectional Transceiver with 3.6V Tolerant Inputs and Outputs Preliminary General Description The VCX32245 contains thirty-two non-inverting bidirectional buffers with 3-STATE outputs and is intended for bus


    Original     		PDF 74VCX32245 32-Bit VCX32245

    96-ball FBGA

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)


    Original     		PDF EDJ1108EJBG EDJ1116EJBG EDJ1108EJBG) EDJ1116EJBG) 78-ball 96-ball 1866Mbps/1600Mbps/1333Mbps 96-ball FBGA

    BF96A

    Abstract: CY2SSTU32866 Q11A Q13A Q8A-Q14A
    Text: CY2SSTU32866 1.8V, 25-bit 1:1 or 14-bit (1:2) JEDEC-Compliant Data Register with Parity Features CSR# inputs are HIGH. If either DCS# or CSR# input is LOW, the Qn outputs will function normally. The RESET# input has priority over the DCS# and CSR# control and will force the


    Original     		PDF CY2SSTU32866 25-bit 14-bit 96-ball BF96A CY2SSTU32866 Q11A Q13A Q8A-Q14A

    CD4000 SERIES BOOK

    Abstract: 74 LS 00 Logic Gates CD4000 cross REFERENCE 1G04 7404 TTL cd4000 cmos logic series guide 164245 7404 not gate SCYT129 s 5941
    Text: TM Technology for Innovators L OGIC M IGRATION G UIDE ➤Widebus and Widebus+™: CMOS & BiCMOS Families ➤Little Logic: CMOS Families ➤Gates and Octals: Bipolar and CMOS Families logic.ti.com INTRODUCTION As the world leader in logic, Texas Instruments TI offers a full spectrum of


    Original     		PDF A070804 SCYB032 CD4000 SERIES BOOK 74 LS 00 Logic Gates CD4000 cross REFERENCE 1G04 7404 TTL cd4000 cmos logic series guide 164245 7404 not gate SCYT129 s 5941

    78 ball fbga

    Abstract: 128Mx16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA 78-Ball 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


    Original     		PDF IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 Ref82560A/AL 78-ball 78 ball fbga DDR3 DRAM 2GB 128Mx16 96BALL FBGA 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA

    Untitled

    Abstract: No abstract text available
    Text: 2Gb: x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features DDR3L-RS SDRAM 1.35V is a low current self refresh version, via a TCSR feature, of the DDR3L SDRAM


    Original     		PDF MT41K256M8 MT41K128M16 8192-cycle 09005aef847d068f

    NT5CB256

    Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CB256 NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8

    MT41K512M8RH

    Abstract: 901KB MT41K256M16 MT41K512M8RH-125 256M16 A2 SMD CODE MARKING MT41K512M8RH-125M DDR3L
    Text: 4Gb: x4, x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K1G4 - 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features • Self refresh temperature SRT • Automatic self refresh (ASR)


    Original     		PDF MT41K1G4 MT41K512M8 MT41K256M16 09005aef8488935b MT41K512M8RH 901KB MT41K256M16 MT41K512M8RH-125 256M16 A2 SMD CODE MARKING MT41K512M8RH-125M DDR3L

    96-ball FBGA

    Abstract: No abstract text available
    Text: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • • • • • • Self refresh temperature SRT Automatic self refresh (ASR) Write leveling Multipurpose register


    Original     		PDF MT41K256M8 MT41K128M16 09005aef847d068f 96-ball FBGA

    MT41K128M16

    Abstract: No abstract text available
    Text: Preliminary‡ 2Gb: x4, x8, x16 DDR3L SDRAM Addendum Description 1.35V DDR3L SDRAM Addendum MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C


    Original     		PDF MT41K512M4 MT41K256M8 MT41K128M16 8192-cycle 09005aef83ed2952 MT41K128M16

    MT41K128M16

    Abstract: MT41K128M1 TIS87 AC135 MT41K256 MT41K128M 140-RT-T MT41K
    Text: 2Gb: x8, x16 DDR3Lm SDRAM Description 1.35V DDR3Lm SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description Features • TC of 0°C to +95°C – 64ms, 8192-cycle refresh at 0°C to +85°C – 32ms at +85°C to +95°C; See SRT


    Original     		PDF MT41K256M8 MT41K128M16 8192-cycle 09005aef847d068f MT41K128M16 MT41K128M1 TIS87 AC135 MT41K256 MT41K128M 140-RT-T MT41K

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


    Original     		PDF 16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400