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    95GHZ Search Results

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    95GHZ Price and Stock

    Abracon Corporation APAMS-103

    Antennas 900/1800 MHZ BW 90/170
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI APAMS-103 Bulk 500 100
    • 1 -
    • 10 -
    • 100 $3.39
    • 1000 $3.1
    • 10000 $3.1
    		Buy Now

    TE Connectivity OC69271-FNM

    Antennas OMNI,DBAND,FIXED,NM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI OC69271-FNM Each 99 1
    • 1 $61.94
    • 10 $51.48
    • 100 $48.28
    • 1000 $48.28
    • 10000 $48.28
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    TE Connectivity OC69271-FNF

    Antennas OMNI,DBAND,FIXED,NF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI OC69271-FNF Each 26 1
    • 1 $63.59
    • 10 $58.16
    • 100 $49.58
    • 1000 $49.58
    • 10000 $49.58
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    Kyocera AVX Components BP0EA1950A700

    Signal Conditioning Size 4617 Fc1.95GHz PB 1.44 to 2.64GHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BP0EA1950A700 WAFL 24 24
    • 1 -
    • 10 -
    • 100 $35.08
    • 1000 $34.39
    • 10000 $34.39
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    Pulse Electronics Corporation DASUTWC500NF

    Antennas DAS ULTRATHIN WHITE ANTENN NPB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI DASUTWC500NF Box 14 7
    • 1 -
    • 10 $77.29
    • 100 $74.27
    • 1000 $74.27
    • 10000 $74.27
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    Find more 95GHZ price and stock on Findchips.com

    95GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UG599

    Abstract: UG-595 UG-383/U waveguide
    Text: Return to Noise Index WAVEGUIDE NOISE STANDARDS 12.4 TO 95GHZ ᮣ WAVEGUIDE OUTPUT CHARACTERISTICS FOR USEWITH NOISE FIGURE METERS MODEL NSI 1218W NSI 1826W NSI 2640W NSI 51826W NSI 52640W NSI 53350W


    Original     		PDF 95GHZ 1826W 2640W 3350W UG-595/U UG-599/U UG599 UG-595 UG-383/U waveguide

    95GHz

    Abstract: UG-595 UG599 UG-383
    Text: WAVEGUIDE NOISE STANDARDS 12.4 TO 95GHZ ᮣ WAVEGUIDE OUTPUT CHARACTERISTICS FOR USEWITH NOISE FIGURE METERS MODEL NSI 1218W NSI 1826W NSI 2640W NSI 51826W NSI 52640W NSI 53350W NSI 5565W NSI 9095W FREQUENCY RF OUTPUT EXCESS NOISE RATIO dB 12.4-18.0 GHz


    Original     		PDF 95GHZ 1826W 2640W 3350W UG-419/U UG-595/U UG-599/U UG-383/U 95GHz UG-595 UG599 UG-383

    CGY2108GS

    Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2
    Text: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services


    Original     		PDF 500MHz 160GHz CGY2108GS D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET WIRELESS COMPONENTS Ceramic Chip Antenna ANT5320LL04R2455A 2.4 AND 5GHZ Product Specification – January 25, 2013 V.0 5320 Series Product specification WIRELESS COMPONENTS FEATURES z Compact size z Omni-directional radiation z Dual-band design


    Original     		PDF ANT5320LL04R2455A YNH0083

    Traveling Wave Amplifier

    Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
    Text: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT


    Original     		PDF 85GHz 575mA/mm, 753mW/mm 18GHz. 12dBm AV02-1684EN Traveling Wave Amplifier 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MICROWAVE POWER G aAs FET MICROWAVE SEMICONDUCTOR T IM 3 7 4 2 -1 6SL TECHNICAL DATA PRELIMINARY FEATURES : • ■ HIGH GAIN LOW INTERMODULATION DISTORTION IM3 a - 4 5 d B c a t PO * 31.5 dBm , S ingle C arrier Level HIGH POWER PtdB » 42.5 dB m at 3 .7 G H z to 4 .2 G H z


    OCR Scan     		PDF 2-16G1B) TIM3742-18SL T1M3742-16SL 95GHz

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM 3742-30S L TECHNICAL DATA FEATURES : • LO W IN T E R M O D U L A T IO N D IS T O R T IO N 1M 3 = —4 5 dBc a t Po = 34.5 dBm, Single C arrier Level ■ BROAD B AN D INTERNALLY MATCHED ■ H IG H PO W ER


    OCR Scan     		PDF 3742-30S 95GHz TIM3742-30SL TIM3742-30SL

    2SK1845

    Abstract: 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511
    Text: HITACHI Ultra High Frequency Devices DATA BOOK H IT A C H I ADE-41 CONTENTS • GENERAL INFORMATION. . . . . . 5 Si Bipolar Transistors.


    OCR Scan     		PDF ADE-41 D-8013 2SK1845 3sk85 2SK408 equivalent 3SK1 3sk156 3sk217 3SK228 3SK103 2sc464 2SC3511

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level •H ig h power - P idB = 36 dBm at 3.7 GHz to 4.2 GHz


    OCR Scan     		PDF TIM3742-4L 95GHz MW50430196 TIM3742-4L DG223bl

    MAAB

    Abstract: 2SC280 2SC2811 881KB 770MHz pg 3 ab 2sc2800 CF-095 PG 5 AB
    Text: - 192 - l- 7 > ÿ x ÿ - i» a a # ± Æ ♦§ a a EM « a g « Ä ti m w » S * J te 5Ë £ Vceo V 35 I cbo(M) 400. 00 Vcb=25V, I e=0 Vebo(V) 4 I ebo(æA) 200.00 Veb=3V, I c=0 le (A) 1 tlFE 180.00 Vce=25V, 1c=0. 1A # Â : Vcc=24V, Po=5», f=770MHz, AB & X¡


    OCR Scan     		PDF 2SC279 770MMz, 770MHz, 15CC/W) Pc-10h Tc-25Â 100mA 2SC2811 32dBm MAAB 2SC280 881KB 770MHz pg 3 ab 2sc2800 CF-095 PG 5 AB