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    Untitled

    Abstract: No abstract text available
    Text: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


    Original     		PDF 94965B IRF1010EPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94965B IRF1010EPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


    Original     		PDF 94965B IRF1010EPbF O-220