IRFI840G
Abstract: C-150 IRGIB7B60KD
Text: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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Original
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PDF
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94620B
IRGIB7B60KD
O-220AB
IRFI840G
O-220AB
IRFI840G
C-150
IRGIB7B60KD
|
IRFI840G
Abstract: ic MARKING QG C-150 IRGIB7B60KD
Text: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
PDF
|
94620B
IRGIB7B60KD
O-220AB
O-220AB
IRFI840G
ic MARKING QG
C-150
IRGIB7B60KD
|
Untitled
Abstract: No abstract text available
Text: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
PDF
|
94620B
IRGIB7B60KD
O-220AB
O-220AB
|