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    945 P TRANSISTOR Search Results

    945 P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    945 P TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    945 TRANSISTOR

    Abstract: AN1294 PD57006 PD57006S smd transistor z8 smd le transistor 945 p a4 smd transistor
    Text: PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 15 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


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    PDF PD57006 PD57006S PD57006 PowerSO-10RF. 945 TRANSISTOR AN1294 PD57006S smd transistor z8 smd le transistor 945 p a4 smd transistor

    945 TRANSISTOR

    Abstract: PD57030S AN1294 PD57030 le5012
    Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


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    PDF PD57030 PD57030S PD57030 PowerSO-10RF. 945 TRANSISTOR PD57030S AN1294 le5012

    AN1294

    Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
    Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package


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    PDF PD57006-E PD57006S-E 945MHz PowerSO-10RF PD57006 PowerSO-10RF. PD570and AN1294 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E

    945 TRANSISTOR

    Abstract: 700B AN1294 GP413
    Text: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package


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    PDF STAP57030 PowerSO-10RF STAP57030 945 TRANSISTOR 700B AN1294 GP413

    stmicroelectronics 402 transistor 650

    Abstract: 700B AN1294 PD57018 PD57018S
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF


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    PDF PD57018 PD57018S PowerSO-10RF PD57018 PowerSO-10RF. PD57018ned stmicroelectronics 402 transistor 650 700B AN1294 PD57018S

    Untitled

    Abstract: No abstract text available
    Text: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


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    PDF PD57070 PD57070S PowerSO-10RF PowerSO-10RF.

    transistor G 945

    Abstract: transistor L 945 945 TRANSISTOR M250 SD57030-01 XSD57030-01 h 945 p 945 P transistor c 945 p transistor
    Text: SD57030-01  RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57030-01 is a common source N-Channel


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    PDF SD57030-01 SD57030-01 XSD57030-01 transistor G 945 transistor L 945 945 TRANSISTOR M250 XSD57030-01 h 945 p 945 P transistor c 945 p transistor

    E2 p SMD Transistor

    Abstract: PD57045S 700B AN1294 PD57045
    Text: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,


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    PDF PD57045 PD57045S PD57045 PowerSO-10RF. E2 p SMD Transistor PD57045S 700B AN1294

    Untitled

    Abstract: No abstract text available
    Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION


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    PDF SD57030 SD57030 TSD57030

    MRF181

    Abstract: 300 uF 450 VDC Mallory Capacitor MRF181SR1
    Text: MOTOROLA Order this document by MRF181/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices


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    PDF MRF181/D MRF181SR1 MRF181ZR1 MRF181/D MRF181 300 uF 450 VDC Mallory Capacitor

    c18st

    Abstract: 700B AN1294 PD57070 PD57070S
    Text: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF


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    PDF PD57070 PD57070S PowerSO-10RF PD57070 PowerSO-10RF. c18st 700B AN1294 PD57070S

    945 TRANSISTOR

    Abstract: 700B M243 SD57030 TSD57030 issi 546
    Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION


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    PDF SD57030 SD57030 TSD57030 945 TRANSISTOR 700B M243 TSD57030 issi 546

    TC50025

    Abstract: MRF181SR1 motorola 549 diode MRF181ZR1 ARLON-GX-0300-55-22 TC5002 300 uF 450 VDC Mallory Capacitor MRF181
    Text: MOTOROLA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices


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    PDF MRF181SR1 MRF181ZR1 TC50025 MRF181SR1 motorola 549 diode MRF181ZR1 ARLON-GX-0300-55-22 TC5002 300 uF 450 VDC Mallory Capacitor MRF181

    Untitled

    Abstract: No abstract text available
    Text: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


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    PDF BD944 BD946 BD948 BD943; CBD944 0Q34552

    b0948

    Abstract: BD944 B0943 BD943 b0944 b0946 BD946 BD948
    Text: dPO ^b BD944 BD946 BD948 A SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE D A T A


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    PDF BD944 BD946 BD948 BD943; BD944 BD948. 7Z82139 b0948 B0943 BD943 b0944 b0946 BD946 BD948

    BD946

    Abstract: BD948 IN 3319 B
    Text: BD944 BD946 BD948 PHILIPS INTERNATIONAL SbE ]> • 7H Q ô 2b 0043004 0T2 ■ P H IN SILICON EPITAXIAL BASE POWER TRANSISTORS T 33 ~ ~ P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD 943; 945 and 947.


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    PDF BD944 BD946 BD948 BD944 T-33-19 BD946 G0M30Ô IN 3319 B

    b0948

    Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
    Text: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


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    PDF bd944 bd946 bd948 711002b BD943; BD948. b0948 b0946 BD944 philips b0944 m lc 945 T 948 BD943 BD948

    SC15010

    Abstract: SC-15010 10pf Capacitor dimension 20NE50 atc100b6r2 20 NE 50 200 pF air variable capacitor sc15000 10pf ceramic CAPACITOR variable resistor surface mount
    Text: SD57030-01 RF POWER TRANSISTORS The Ldm oS T FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION • P o u t = 30 W with 13 dB gain @ 945 MHz . BeO FREE PACKAGE DESCRIPTION The SD57030-01 is a common source N-Channel


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    PDF SD57030-01 SD57030-01 XSD57030-01 SC15010 SC15000 SC15010 SC-15010 10pf Capacitor dimension 20NE50 atc100b6r2 20 NE 50 200 pF air variable capacitor sc15000 10pf ceramic CAPACITOR variable resistor surface mount

    b051 TRANSISTOR

    Abstract: atc 174 SD57045 SC1479 sd57d atc100b6r2 GCB7390 M250 SD57045-01 TSD57045-01
    Text: SD57045-01 RF POWER TRANSISTORS The Ldm oS T FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . . EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION • P o u t = 45 W PEP with 13 dB gain @ 945 MHz . BeO FREE PACKAGE DESCRIPTION The SD57045-01 is a common source N-Channel


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    PDF SD57045-01 SD57045-01 TSD57045-01 pc1221d 1022729B b051 TRANSISTOR atc 174 SD57045 SC1479 sd57d atc100b6r2 GCB7390 M250 TSD57045-01

    lc 945 p transistor NPN TO 92

    Abstract: 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR
    Text: M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR NPN F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range -55°C to + 150”C T j.T s tg :


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    PDF IJ11III lc 945 p transistor NPN TO 92 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR

    c945 transistor

    Abstract: TRANSISTOR c945 p C945 P C945 NPN transistor transistor C945 C945 BR c945 transistor BR c945 C945 RI C945 TO92
    Text: TO-92 Plastic-Encapsulate Transistors ^ C 945 TR A N SISTO R N PN FEATURES HSR9RB9RB Pow er TO-92 P cm ; 0 .4 W (Tam b=25°C) C ollector current 1.E M I T T E R Ic 2.C O L L E C T O R m : 0.15 A G S flttSR S S B fiB E S C ollector-b ase voltage 3.B A S E


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    PDF

    m lc 945

    Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
    Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general


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    PDF BDS943/945/947 OT223) BDS944/946/948. OT223 BDS943 BDS945 BDS947 m lc 945 945 npn 947 smd

    m lc 945

    Abstract: TI 945 BDS945 945 npn BDS943 BDS947 0034T 947 smd
    Text: Philips Components Data sheet status Product specification date of issue April 1891 B D S 9 4 3 /9 4 5 /9 4 7 NPN silicon epitaxial base power transistors PINNING - SOT223 D ESCRIPTIO N PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature S M D envelope


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    PDF BDS943/945/947 OT223) BDS944/946/948. OT223 BDS943 BDS945 BDS947 m lc 945 TI 945 945 npn 0034T 947 smd

    BDS945

    Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
    Text: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors


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    PDF 711002b BDS943/945/947 T-33-0? OT223) BDS944/946/948. BDS943 BDS945 BDS947 m lc 945 J 3305 DDM317S