Untitled
Abstract: No abstract text available
Text: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.
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BD944
BD946
BD948
BD943;
CBD944
0Q34552
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BD946
Abstract: BD944 BD948 lc 945 p transistor BD943 IEC134
Text: BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE DATA BD944 946 948
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BD944
BD946
BD948
BD943;
BD944
500mA
-lc-250mA
BD946
BD948
lc 945 p transistor
BD943
IEC134
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b0948
Abstract: BD944 B0943 BD943 b0944 b0946 BD946 BD948
Text: dPO ^b BD944 BD946 BD948 A SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE D A T A
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BD944
BD946
BD948
BD943;
BD944
BD948.
7Z82139
b0948
B0943
BD943
b0944
b0946
BD946
BD948
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BD946
Abstract: BD948 IN 3319 B
Text: BD944 BD946 BD948 PHILIPS INTERNATIONAL SbE ]> • 7H Q ô 2b 0043004 0T2 ■ P H IN SILICON EPITAXIAL BASE POWER TRANSISTORS T 33 ~ ~ P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD 943; 945 and 947.
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BD944
BD946
BD948
BD944
T-33-19
BD946
G0M30Ô
IN 3319 B
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b0948
Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
Text: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.
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bd944
bd946
bd948
711002b
BD943;
BD948.
b0948
b0946
BD944 philips
b0944
m lc 945
T 948
BD943
BD948
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SC15010
Abstract: SC-15010 10pf Capacitor dimension 20NE50 atc100b6r2 20 NE 50 200 pF air variable capacitor sc15000 10pf ceramic CAPACITOR variable resistor surface mount
Text: SD57030-01 RF POWER TRANSISTORS The Ldm oS T FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION • P o u t = 30 W with 13 dB gain @ 945 MHz . BeO FREE PACKAGE DESCRIPTION The SD57030-01 is a common source N-Channel
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SD57030-01
SD57030-01
XSD57030-01
SC15010
SC15000
SC15010
SC-15010
10pf Capacitor dimension
20NE50
atc100b6r2
20 NE 50
200 pF air variable capacitor
sc15000
10pf ceramic CAPACITOR
variable resistor surface mount
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b051 TRANSISTOR
Abstract: atc 174 SD57045 SC1479 sd57d atc100b6r2 GCB7390 M250 SD57045-01 TSD57045-01
Text: SD57045-01 RF POWER TRANSISTORS The Ldm oS T FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . . EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION • P o u t = 45 W PEP with 13 dB gain @ 945 MHz . BeO FREE PACKAGE DESCRIPTION The SD57045-01 is a common source N-Channel
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SD57045-01
SD57045-01
TSD57045-01
pc1221d
1022729B
b051 TRANSISTOR
atc 174
SD57045
SC1479
sd57d
atc100b6r2
GCB7390
M250
TSD57045-01
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lc 945 p transistor NPN TO 92
Abstract: 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR
Text: M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR NPN F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range -55°C to + 150”C T j.T s tg :
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IJ11III
lc 945 p transistor NPN TO 92
945 TRANSISTOR
lc 945 p transistor
C 945 Transistor
lc 945 p transistor NPN
transistor c945
TRANSISTOR c945 p
BR c945
C945
c945 TRANSISTOR
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c945 transistor
Abstract: TRANSISTOR c945 p C945 P C945 NPN transistor transistor C945 C945 BR c945 transistor BR c945 C945 RI C945 TO92
Text: TO-92 Plastic-Encapsulate Transistors ^ C 945 TR A N SISTO R N PN FEATURES HSR9RB9RB Pow er TO-92 P cm ; 0 .4 W (Tam b=25°C) C ollector current 1.E M I T T E R Ic 2.C O L L E C T O R m : 0.15 A G S flttSR S S B fiB E S C ollector-b ase voltage 3.B A S E
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945 TRANSISTOR
Abstract: AN1294 PD57006 PD57006S smd transistor z8 smd le transistor 945 p a4 smd transistor
Text: PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 15 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION
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PD57006
PD57006S
PD57006
PowerSO-10RF.
945 TRANSISTOR
AN1294
PD57006S
smd transistor z8
smd le
transistor 945 p
a4 smd transistor
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945 TRANSISTOR
Abstract: PD57030S AN1294 PD57030 le5012
Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION
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PD57030
PD57030S
PD57030
PowerSO-10RF.
945 TRANSISTOR
PD57030S
AN1294
le5012
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AN1294
Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package
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PD57006-E
PD57006S-E
945MHz
PowerSO-10RF
PD57006
PowerSO-10RF.
PD570and
AN1294
PD57006-E
PD57006S
PD57006S-E
PD57006STR-E
PD57006TR-E
PD57006E
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945 TRANSISTOR
Abstract: 700B AN1294 GP413
Text: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package
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STAP57030
PowerSO-10RF
STAP57030
945 TRANSISTOR
700B
AN1294
GP413
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stmicroelectronics 402 transistor 650
Abstract: 700B AN1294 PD57018 PD57018S
Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD57018
PD57018S
PowerSO-10RF
PD57018
PowerSO-10RF.
PD57018ned
stmicroelectronics 402 transistor 650
700B
AN1294
PD57018S
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transistor G 945
Abstract: transistor L 945 945 TRANSISTOR M250 SD57030-01 XSD57030-01 h 945 p 945 P transistor c 945 p transistor
Text: SD57030-01 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57030-01 is a common source N-Channel
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SD57030-01
SD57030-01
XSD57030-01
transistor G 945
transistor L 945
945 TRANSISTOR
M250
XSD57030-01
h 945 p
945 P transistor
c 945 p transistor
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E2 p SMD Transistor
Abstract: PD57045S 700B AN1294 PD57045
Text: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,
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PD57045
PD57045S
PD57045
PowerSO-10RF.
E2 p SMD Transistor
PD57045S
700B
AN1294
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m lc 945
Abstract: BDS945 BDS943 BDS947 945 npn 947 smd
Text: Philips Components Datasheet status Product specification date of issue April 1991 BDS943/945/947 NPN Silicon epitaxial base power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general
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BDS943/945/947
OT223)
BDS944/946/948.
OT223
BDS943
BDS945
BDS947
m lc 945
945 npn
947 smd
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m lc 945
Abstract: TI 945 BDS945 945 npn BDS943 BDS947 0034T 947 smd
Text: Philips Components Data sheet status Product specification date of issue April 1891 B D S 9 4 3 /9 4 5 /9 4 7 NPN silicon epitaxial base power transistors PINNING - SOT223 D ESCRIPTIO N PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature S M D envelope
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BDS943/945/947
OT223)
BDS944/946/948.
OT223
BDS943
BDS945
BDS947
m lc 945
TI 945
945 npn
0034T
947 smd
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BDS945
Abstract: m lc 945 J 3305 BDS943 BDS947 DDM317S
Text: PHILIPS INTERNATIONAL Product specification date of issue April 1991 711002b 0043175 2bl • PHIN BDS943/945/947 Data sheet status m SbE V Philips Components T -3 3-o s NPN Silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN NPN silicon epitaxial base transistors
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711002b
BDS943/945/947
T-33-0?
OT223)
BDS944/946/948.
BDS943
BDS945
BDS947
m lc 945
J 3305
DDM317S
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Untitled
Abstract: No abstract text available
Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION
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SD57030
SD57030
TSD57030
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MRF181
Abstract: 300 uF 450 VDC Mallory Capacitor MRF181SR1
Text: MOTOROLA Order this document by MRF181/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF181/D
MRF181SR1
MRF181ZR1
MRF181/D
MRF181
300 uF 450 VDC Mallory Capacitor
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c18st
Abstract: 700B AN1294 PD57070 PD57070S
Text: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD57070
PD57070S
PowerSO-10RF
PD57070
PowerSO-10RF.
c18st
700B
AN1294
PD57070S
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945 TRANSISTOR
Abstract: 700B M243 SD57030 TSD57030 issi 546
Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION
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SD57030
SD57030
TSD57030
945 TRANSISTOR
700B
M243
TSD57030
issi 546
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TC50025
Abstract: MRF181SR1 motorola 549 diode MRF181ZR1 ARLON-GX-0300-55-22 TC5002 300 uF 450 VDC Mallory Capacitor MRF181
Text: MOTOROLA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF181SR1
MRF181ZR1
TC50025
MRF181SR1
motorola 549 diode
MRF181ZR1
ARLON-GX-0300-55-22
TC5002
300 uF 450 VDC Mallory Capacitor
MRF181
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