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    Abracon Corporation ABLS-9.7941MHZ-10-R20-D-T

    CRYSTAL 9.7941MHZ 10PF SMD
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    941MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M67760HC

    Abstract: f941m
    Text: MITSUBISHI RF POWER MODULE M67760HC 896-941MHz, 12.5V, 20W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 66±1 2 3 4 60±1 6±0.2 52±1 1 R1.5 2 5 R2±0.2 1 2 3 4 5 6 6 0.5 ±0.15 4±0.2 4.5±1 16.5±1 10.5±1 12±1 PIN: 1 Pin : RF INPUT


    Original     		PDF M67760HC 896-941MHz, 896MHz 400mW 941MHz M67760HC f941m

    RA03M8894M

    Abstract: RA03M8894M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to


    Original     		PDF RA03M8894M 889-941MHz RA03M8894M 941-MHz RA03M8894M-101

    RA45H8994M1-101

    Abstract: G marking RA45H8994M1 POUT18 lta 601
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to


    Original     		PDF RA45H8994M1 896-941MHz RA45H8994M1 45-watt 941-MHz RA45H8994M1-101 G marking POUT18 lta 601

    MARK "326" FET

    Abstract: transistor 3669
    Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK


    Original     		PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) 05Electric Oct2011 MARK "326" FET transistor 3669

    M68757H

    Abstract: 40T7
    Text: MITSUBISHI RF POWER MODULE M68757H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY


    Original     		PDF M68757H 896-941MHz, 896MHz 941MHz M68757H 40T7

    RA45H8994M1

    Abstract: RA45H8994M1-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to


    Original     		PDF RA45H8994M1 896-941MHz RA45H8994M1 45-watt 941-MHz RA45H8994M1-101

    RA20H8994M

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz range.


    Original     		PDF RA20H8994M RA20H8994M 20-watt 941-MHz

    GRM39

    Abstract: GRM708 RD05MMP1 diode GP 829 6030D
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GRM39 GRM708 diode GP 829 6030D

    RA03M8894M

    Abstract: RA03M8894M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894 RA03M8894M 03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to


    Original     		PDF RA03M8894M 03M8894 889-941MHz RA03M8894M 941-MHz RA03M8894M-101

    TRANSISTOR D 1785

    Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) TRANSISTOR D 1785 diode GP 829 transistor 3669 6030D diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w

    RA20H8994M

    Abstract: RA20H8994M-101 mitsubishi rf RF MOSFET MODULE
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to


    Original     		PDF RA20H8994M 896-941MHz RA20H8994M 20-watt 941-MHz RA20H8994M-101 mitsubishi rf RF MOSFET MODULE

    RA45H8994M1

    Abstract: RA45H8994M1-101 D3060
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to


    Original     		PDF RA45H8994M1 896-941MHz RA45H8994M1 45-watt 941-MHz RA45H8994M1-101 D3060

    RF MOSFET MODULE

    Abstract: RA03M8894M RA03M8894M-101 RA03M8894 MOSFET Amplifier Module
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M RoHS Compliance , 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to


    Original     		PDF RA03M8894M 889-941MHz RA03M8894M 941-MHz RF MOSFET MODULE RA03M8894M-101 RA03M8894 MOSFET Amplifier Module

    RA03M8894M-01

    Abstract: RA03M8894M RA03M8894M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 889- to 941-MHz range.


    Original     		PDF RA03M8894M 889-941MHz RA03M8894M 941-MHz av86-2-2833-9793 RA03M8894M-01 RA03M8894M-E01

    Untitled

    Abstract: No abstract text available
    Text: <Silicon RF Power Modules > RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz range.


    Original     		PDF RA20H8994M 896-941MHz RA20H8994M 20-watt 941-MHz

    metwn

    Abstract: No abstract text available
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz


    Original     		PDF RA20H8994M 935-941MHz RA20H8994M 20-watt 941-MHz metwn

    RA03M8894M

    Abstract: RA03M8894M-01 mitsubishi power module
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8894M 889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 889- to


    Original     		PDF RA03M8894M 889-941MHz RA03M8894M 941-MHz RA03M8894M-01 mitsubishi power module

    RA20H8994M

    Abstract: RA20H8994M-01 transistor mosfet 536 hatfield attenuator
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to


    Original     		PDF RA20H8994M 935-941MHz RA20H8994M 20-watt 941-MHz RA20H8994M-01 transistor mosfet 536 hatfield attenuator

    RA45H8994M1

    Abstract: RA45H8994M1-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to


    Original     		PDF RA45H8994M1 896-941MHz RA45H8994M1 45-watt 941-MHz RA45H8994M1-101

    grm708

    Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) grm708 transistor 5024 GRM39 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK


    Original     		PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz)

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the


    Original     		PDF RA45H8994M1 896-941MHz RA45H8994M1 45-watt 941-MHz

    M68745H

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M68745H SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3.8W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 45 2 3 42 2-R1.5 1 4 5 5 18 5 8.5 36.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY


    Original     		PDF M68745H 896-941MHz, 941MHz M68745H

    RA20H8994M

    Abstract: 2 x 20w amplifier
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to


    Original     		PDF RA20H8994M 896-941MHz RA20H8994M 20-watt 941-MHz 2 x 20w amplifier