irfb31n20d
Abstract: AN1001 IRFS31N20D IRFSL31N20D
Text: PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS 200V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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Original
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93805B
IRFB31N20D
IRFS31N20D
IRFSL31N20D
AN1001)
O-220AB
O-262
irfb31n20d
AN1001
IRFS31N20D
IRFSL31N20D
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PDF
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IRF AN1001
Abstract: irfb31n20d AN1001 IRFS31N20D IRFSL31N20D irfb31n20
Text: PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS 200V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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Original
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93805B
IRFB31N20D
IRFS31N20D
IRFSL31N20D
AN1001)
O-220AB
O-262
IRF AN1001
irfb31n20d
AN1001
IRFS31N20D
IRFSL31N20D
irfb31n20
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS 200V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
|
Original
|
93805B
IRFB31N20D
IRFS31N20D
IRFSL31N20D
AN1001)
O-220AB
O-262
|
PDF
|