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    IRHG6110

    Abstract: IRHG63110 MO-036AB
    Text: PD - 93783E IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω


    Original     		PDF 93783E IRHG6110 MO-036AB) IRHG63110 MIL-STD-750, MlL-STD-750, 267mH, IRHG6110 IRHG63110 MO-036AB

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    Abstract: No abstract text available
    Text: PD - 93783E IRHG6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number Radiation Level RDS(on) IRHG6110 100K Rads (Si) 0.6Ω IRHG63110 300K Rads (Si) 0.6Ω


    Original     		PDF 93783E IRHG6110 MO-036AB) IRHG63110 MIL-STD-750, MlL-STD-750, 267mH,