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    935 POWER DIODE Search Results

    935 POWER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    935 POWER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JDSU laser diode

    Abstract: 935 power diode
    Text: COMMERCIAL LASERS High-Power 2.5 W 935 nm Fiber-Coupled Diode Laser 6395-L3 Series Key Features • Up to 2 W output power at 0.12 NA • 935 ± 35 nm • 50 µm Step Index fiber • Highly reliable • Highly efficiency Applications • Flexco graphic arts


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    PDF 6395-L3 6395L3 498-JDSU 5378-JDSU JDSU laser diode 935 power diode

    Untitled

    Abstract: No abstract text available
    Text: tSENSITRON 120NQ035 120NQ040 120NQ045 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 935, REV. - PLASTIC POWER SCHOTTKY RECTIFIER 35/40/45 V, 120 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:


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    PDF 120NQ035 120NQ040 120NQ045

    GHB-1206L-YG

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-YG Features Description !3.2mmx1.6mm SMT LED,1.8mm THICKNESS. The Green source color devices are made with InGaAlP !LOW POWER CONSUMPTION. on GaAs substrate Light Emitting Diode.


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    PDF GHB-1206L-YG 2000PCS DEC/03/2002 GHB-1206L-YG

    GHB-3M35-G

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M35-G Features Description !LOW POWER CONSUMPTION. The Green source color devices are made with !GENERAL PURPOSE LEADS. InGaN on SiC Light Emitting Diode. !RELIABLE AND RUGGED.


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    PDF GHB-3M35-G MAR/05/2003 GHB-3M35-G

    GHB-1104R-B

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1104R-B Features Description !3.0mmx1.0mm SMT LED, 2.0mm THICKNESS. The Blue source color devices are made with !LOW POWER CONSUMPTION. Gan on Sapphire Light Emitting Diode.


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    PDF GHB-1104R-B 2000PCS DEC/29/2002 GHB-1104R-B

    GHB-3M60D-O

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M60D-O Features Description !HIGH INTENSITY. The Super Bright Orange source color devices are made !LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting Diode.


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    PDF GHB-3M60D-O MAR/05/2003 GHB-3M60D-O

    GHB-0802R-B

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0802R-B Features Description !2.1mmx0.6mm SMT LED, 1.0mm THICKNESS. The Blue source color devices are made with InGaN !LOW POWER CONSUMPTION. on SiC Light Emitting Diode.


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    PDF GHB-0802R-B 2000PCS DEC/17/2002 GHB-0802R-B

    GHB-0805-B

    Abstract: yp36
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0805-B Features Description !2.0mmx1.25mm SMT LED, 1.1mm THICKNESS. The Blue source color devices are made with GaN !LOW POWER CONSUMPTION. on Sapphire Light Emitting Diode.


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    PDF GHB-0805-B 2000PCS DEC/17/2002 GHB-0805-B yp36

    GHB-3M35-O

    Abstract: GHB-3M60D-O
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M35-O Description Features The Super Bright Orange source color devices are made !LOW with DH InGaAlP on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. !POPULAR


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    PDF GHB-3M35-O MAR/05/2003 GHB-3M35-O GHB-3M60D-O

    GHB-3M40D-O

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M40D-O Description Features The Super Bright Orange source color devices are made !LOW with DH InGaAlP on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. !SUITABLE


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    PDF GHB-3M40D-O MAR/05/2003 GHB-3M40D-O

    GHB-3M30D-B

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M20D-B Features Description !LOW POWER CONSUMPTION. The Blue source color devices are made with InGaN on !POPULAR T-1 DIAMETER PACKAGE. SiC Light Emitting Diode. !GENERAL PURPOSE LEADS.


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    PDF GHB-3M20D-B MAR/05/2003 GHB-3M30D-B

    GHB-1206L-B

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on SiC Light Emitting Diode.


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    PDF GHB-1206L-B 2000PCS DEC/05/2002 GHB-1206L-B

    smd diode B3

    Abstract: GHB-1206L-B3
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B3 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on Sapphire Light Emitting Diode.


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    PDF GHB-1206L-B3 2000PCS DEC/05/2002 smd diode B3 GHB-1206L-B3

    GHB-3M50-RO

    Abstract: yp2000
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M50-RO Features Description !LOW The Hyper Orange source color devices are made with POWER CONSUMPTION. !POPULAR T-1 DIAMETER PACKAGE. DH InGaAlP on GaAs substrate Light Emitting Diode.


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    PDF GHB-3M50-RO MAR/05/2003 GHB-3M50-RO yp2000

    GHB-3M50-G

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M50-G Features Description !LOW POWER CONSUMPTION. The Green source color devices are made with !GENERAL PURPOSE LEADS. InGaN on SiC Light Emitting Diode. !RELIABLE AND RUGGED.


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    PDF GHB-3M50-G MAR/05/2003 GHB-3M50-G

    GHB-3M20-B

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M20-B Features Description !LOW POWER CONSUMPTION. The Blue source color devices are made with InGaN on !POPULAR T-1 DIAMETER PACKAGE. SiC Light Emitting Diode. !GENERAL PURPOSE LEADS.


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    PDF GHB-3M20-B MAR/05/2003 GHB-3M20-B

    GHB-3M20-B2

    Abstract: 3m20
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M20-B2 Features Description !LOW POWER CONSUMPTION. The Blue source color devices are made with InGaN on !POPULAR T-1 DIAMETER PACKAGE. SiC Light Emitting Diode. !GENERAL PURPOSE LEADS.


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    PDF GHB-3M20-B2 MAR/05/2003 GHB-3M20-B2 3m20

    GHB-1206L-B2

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B2 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with InGaN on SiC Light Emitting Diode.


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    PDF GHB-1206L-B2 2000PCS DEC/05/2002 GHB-1206L-B2

    GHB-1104R-YG

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1104R-YG Features Description !3.0mmx1.0mm SMT LED, 2.0mm THICKNESS. The Mega Green source color devices are made with !LOW POWER CONSUMPTION. DH InGaAlP on GaAs substrate Light Emitting Diode.


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    PDF GHB-1104R-YG 2000PCS DEC/29/2002 GHB-1104R-YG

    GHB-3M50-YG

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M50-YG Features !LOW Description POWER CONSUMPTION. !GENERAL PURPOSE LEADS. !RELIABLE AND RUGGED. !LONG The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode.


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    PDF GHB-3M50-YG MAR/05/2003 GHB-3M50-YG

    GHB-3M35-R

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M35-R Features Description !LOW The Hyper Red source color devices are made with POWER CONSUMPTION. !SOLID STATE BLUE LIGHT SOURCE DH InGaAlP on GaAs substrate Light Emitting Diode.


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    PDF GHB-3M35-R MAR/05/2003 GHB-3M35-R

    GHB-3M50-R

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M50-R Features Description !LOW POWER CONSUMPTION. The Hyper Bright Red source color devices are. !POPULAR T-1 DIAMETER PACKAGE. made with DH InGaAIP on GaAs substrate Light Emitting Diode


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    PDF GHB-3M50-R MAR/05/2per MAR/05/2003 GHB-3M50-R

    GHB-3M35-CW

    Abstract: No abstract text available
    Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M35-CW Features Description !LOW POWER CONSUMPTION. The source color devices are made with GaN on SiC !SUITABLE FOR Light Emitting Diode. FULL COLOR LED DISPLAYS AND INDICATORS DIAGNOSTIC/ANALYTICAL EQUIPMENT.


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    PDF GHB-3M35-CW JAN/30/2003 GHB-3M35-CW

    W0458

    Abstract: 935AB IN937 935A
    Text: f Z 7 SGS-THOMSON ^7# 1N 935,A,B 1N939,A TEMPERATURE COMPENSATED ZENER DIODES • SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING DO 35 Glass ABSOLUTE RATINGS (limiting values) P aram e ter Symbol Ptot Power Dissipation* T stg


    OCR Scan
    PDF 1N939 W0458 935AB IN937 935A