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    931 DIODE Search Results

    931 DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    931 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FAST HIGH VOLTAGE DIODE 4000 V

    Abstract: schneider
    Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 931 SH 65T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten


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    diode 2500A

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 931 SH 65T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten


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    PDF EigenschaftenDSH65 diode 2500A

    keller PA-21

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 931 SH 65T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten


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    Untitled

    Abstract: No abstract text available
    Text: DF40-931 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current35 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)18 @Temp. (øC) (Test Condition)25


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    PDF DF40-931 Current35 Voltage600 Current100u

    Untitled

    Abstract: No abstract text available
    Text: BD40-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current50 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)25


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    PDF BD40-931 Current50 Voltage400 Current100u

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    Abstract: No abstract text available
    Text: BA41-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current40 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)20


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    PDF BA41-931 Current40 Voltage100 Current100u

    Untitled

    Abstract: No abstract text available
    Text: GF37-931 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)8.0


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    PDF GF37-931 Current25 Voltage600 Current100u

    Untitled

    Abstract: No abstract text available
    Text: GA37-931 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)8.0


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    PDF GA37-931 Current25 Voltage100 Current100u

    ba40 bridge

    Abstract: BA40
    Text: BA40-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current50 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)25


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    PDF BA40-931 Current50 Voltage100 Current100u ba40 bridge BA40

    Untitled

    Abstract: No abstract text available
    Text: BL36-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)80 V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)5.0


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    PDF BL36-931 Current10 Current100u

    Untitled

    Abstract: No abstract text available
    Text: DA37-931 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current15 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)7.5 @Temp. (øC) (Test Condition)25


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    PDF DA37-931 Current15 Voltage100 Current100u

    Untitled

    Abstract: No abstract text available
    Text: NL37-931 Diodes Center-Tapped Negative CA Silicon Rectifier I O Max.(A) Output Current30 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)15 @Temp. (øC) (Test Condition)25


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    PDF NL37-931 Current30 Current100u urrent100u

    Untitled

    Abstract: No abstract text available
    Text: NY40-931 Diodes Center-Tapped Negative CA Silicon Rectifier I O Max.(A) Output Current70 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)25


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    PDF NY40-931 Current70 Voltage50 Current100u

    BD36931

    Abstract: BD36-931
    Text: BD36-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current10 @Temp (øC) (Test Condition)80 V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)5.0


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    PDF BD36-931 Current10 Voltage400 Current100u BD36931

    Untitled

    Abstract: No abstract text available
    Text: BH41-931 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current40 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)20


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    PDF BH41-931 Current40 Voltage800 Current100u

    Dj37

    Abstract: No abstract text available
    Text: DJ37-931 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current15 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)7.5 @Temp. (øC) (Test Condition)25


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    PDF DJ37-931 Current15 Current100u Dj37

    Untitled

    Abstract: No abstract text available
    Text: GB39-931 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current35 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.400 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)12


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    PDF GB39-931 Current35 Voltage200 Current100u

    Untitled

    Abstract: No abstract text available
    Text: NB39-931 Diodes Center-Tapped Negative CA Silicon Rectifier I O Max.(A) Output Current50 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.600 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)25 @Temp. (øC) (Test Condition)25


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    PDF NB39-931 Current50 Voltage200 Current100u

    Untitled

    Abstract: No abstract text available
    Text: CA37-931 Diodes Center-Tapped Positive CC Silicon Rectifier I O Max.(A) Output Current30 @Temp (øC) (Test Condition)60 V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.300 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)15 @Temp. (øC) (Test Condition)25


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    PDF CA37-931 Current30 Voltage100 Current100u rrent100u

    Untitled

    Abstract: No abstract text available
    Text: CH40-931 Diodes Center-Tapped Positive CC Silicon Rectifier I O Max.(A) Output Current70 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)25


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    PDF CH40-931 Current70 Voltage800 Current100u rrent100u

    100 N 37

    Abstract: 931 Diode 37931 37741 diode DB 3 C DA741-931 diode 741 df diode 1003G DH741931
    Text: «pack 931 » diode/thyristor modules d io d e /th y rïs fo r «pack 931 » THOMSON-CSF V RRM 'f s m / ' t s m Type« •g t Rq K = 1 WÎ 10 ms V 15 A / DY DA DB DD DF DH 37 37 37 37 37 37 931 931 931 931 931 931 30 A N/C N/C N/C N/C N/C N/C Y 37 A 37 B 37


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    PDF D68-269) 100 N 37 931 Diode 37931 37741 diode DB 3 C DA741-931 diode 741 df diode 1003G DH741931

    facon diode

    Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl
    Text: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg


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    PDF 345b2D3 T-23-0\ cb-200 741j37 cb-236 facon diode 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl

    cb 237

    Abstract: 1001dl 741 AMP DB39-931 in 741 DIODE CB-237 CB200 DH741931 ci 741 a 741 j
    Text: « pack 931» diode/thyristor 12 Amp m o d u les d io d e/th y risto r « p a c k 931 »12 A m p V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn O V RRM I r p e r leg @ p a r bras VR >GT RGK - 1 k n 125 °C V (A) (m A) (UA) (m A ) 50 100 200


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    PDF CB-200 741J37 CB-236 CB-200 CB-237 CB-335 CB-361 cb 237 1001dl 741 AMP DB39-931 in 741 DIODE CB-237 CB200 DH741931 ci 741 a 741 j

    BU931

    Abstract: No abstract text available
    Text: B U 931 BU931P HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPO LARTECHNOLO GY . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES APPLICATIONS . HIGH RUGGEDNESS ELECTRONIC IGNITIONS INTERNAL SCHEMATIC DIAGRAM C<, » I


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    PDF BU931P SC06500 BU931 P003F BU931 O-218 OT-93)