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    930 DIODE ZENER Search Results

    930 DIODE ZENER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    930 DIODE ZENER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMB5349B

    Abstract: SMB5338B
    Text: SMB5338B~SMB5369B Zener diode Features 1. For surface mounted applications 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol


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    PDF SMB5338B SMB5369B Tamb75 1-Apr-2006 DO-214AA SMB5349B

    Untitled

    Abstract: No abstract text available
    Text: 1N5338B~1N5369B Zener diode Features 1. Low profile package 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV


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    PDF 1N5338B 1N5369B 1-Jan-2006 DO-15 1N5339B

    Untitled

    Abstract: No abstract text available
    Text: SMB5338B~SMB5369B Zener diode Features 1. For surface mounted applications 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol


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    PDF SMB5338B SMB5369B 1-Nov-2006 DO-214AA

    Untitled

    Abstract: No abstract text available
    Text: MPS-080917P-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-080917P-85 is a low noise , high dynamic range amplifier designed


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    PDF MPS-080917P-85 MPS-080917P-85 NMT-900 080917P

    Untitled

    Abstract: No abstract text available
    Text: MPS-090917N-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-090917N-85 is a low noise , high dynamic range amplifier designed


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    PDF MPS-090917N-85 MPS-090917N-85 090917N

    Untitled

    Abstract: No abstract text available
    Text: MPS-080917N-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 0.8 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-080917N-85 is a low noise , high dynamic range amplifier designed


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    PDF MPS-080917N-85 MPS-080917N-85 NMT-900 080917N

    Untitled

    Abstract: No abstract text available
    Text: SMB5338B~SMB5369B Zener diode Features 1. For surface mounted applications 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol


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    PDF SMB5338B SMB5369B Tamb75 1-Nov-2006 DO-214AA

    MPS-090917P-85

    Abstract: 920 diode zener mps 940
    Text: MPS-090917P-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-85 is a low noise , high dynamic range amplifier designed


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    PDF MPS-090917P-85 MPS-090917P-85 090917P 920 diode zener mps 940

    MPS-090917N-85

    Abstract: 920 diode zener 930 diode zener
    Text: MPS-090917N-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-090917N-85 is a low noise , high dynamic range amplifier designed


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    PDF MPS-090917N-85 MPS-090917N-85 090917N 920 diode zener 930 diode zener

    MPS-080917P-85

    Abstract: NMT-900
    Text: MPS-080917P-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-080917P-85 is a low noise , high dynamic range amplifier designed


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    PDF MPS-080917P-85 MPS-080917P-85 NMT-900 080917P

    Untitled

    Abstract: No abstract text available
    Text: MPS-090917P-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-85 is a low noise , high dynamic range amplifier designed


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    PDF MPS-090917P-85 MPS-090917P-85 090917P

    Untitled

    Abstract: No abstract text available
    Text: MPS-0809A9-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 6.0 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 16 dB Typical Gain The MPS-0809A9-85 is a low noise , high dynamic range amplifier designed


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    PDF MPS-0809A9-85 MPS-0809A9-85 NMT-900 0809A9

    MPS-0809A9-85

    Abstract: NMT-900 rf power amplifier 850 MHZ diode 910
    Text: MPS-0809A9-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 6.0 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 16 dB Typical Gain The MPS-0809A9-85 is a low noise , high dynamic range amplifier designed


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    PDF MPS-0809A9-85 MPS-0809A9-85 NMT-900 0809A9 rf power amplifier 850 MHZ diode 910

    MPS-080917N-85

    Abstract: NMT-900
    Text: MPS-080917N-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 0.8 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-080917N-85 is a low noise , high dynamic range amplifier designed


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    PDF MPS-080917N-85 MPS-080917N-85 NMT-900 080917N

    Untitled

    Abstract: No abstract text available
    Text: MPS-0809A9-82 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 6.0 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 16 dB Typical Gain The MPS-0809A9-82 is a low noise , high dynamic range amplifier designed


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    PDF MPS-0809A9-82 MPS-0809A9-82 NMT-900 0809A9

    Untitled

    Abstract: No abstract text available
    Text: MPS-090917P-82 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-82 is a low noise , high dynamic range amplifier designed


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    PDF MPS-090917P-82 MPS-090917P-82 Fre50 090917P

    MPS-0809A9-82

    Abstract: NMT-900 Zener Diode high frequency applications
    Text: MPS-0809A9-82 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 6.0 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 16 dB Typical Gain The MPS-0809A9-82 is a low noise , high dynamic range amplifier designed


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    PDF MPS-0809A9-82 MPS-0809A9-82 NMT-900 0809A9 Zener Diode high frequency applications

    MPS-090917P-82

    Abstract: No abstract text available
    Text: MPS-090917P-82 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-82 is a low noise , high dynamic range amplifier designed


    Original
    PDF MPS-090917P-82 MPS-090917P-82 090917P

    1N5338B

    Abstract: 1n5339b
    Text: 1N5338B~1N5369B Zener diode Features 1. Low profile package 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV


    Original
    PDF 1N5338B 1N5369B Tamb75 1-Nov-2006 DO-15 1N5339B 1n5339b

    Untitled

    Abstract: No abstract text available
    Text: MPS-080917N-82 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 0.8 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-080917N-82 is a low noise , high dynamic range amplifier designed


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    PDF MPS-080917N-82 MPS-080917N-82 NMT-900 080917N

    ZENER DIODE 5.1V

    Abstract: CAPACITOR 33PF DB-55035S-930 SMD Transistor 30w NV SMD TRANSISTOR 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S
    Text: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1


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    PDF DB-55035S-930 PD55035S DB-55035S-930 ZENER DIODE 5.1V CAPACITOR 33PF SMD Transistor 30w NV SMD TRANSISTOR 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S

    zener 245

    Abstract: 245 zener 10 watt zener diode ZENER DIODE 1N2976B diode Lz zener LN298 50 Watt Zener Diode 1N2828B 1N2990B 1N2991B
    Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 Maximum Zener Current Test Current lz Zener Impedance Zz Volts mA 1N2990B 1N2991B 1N2992B 1N2993B 1N2994B 33 36 39 43 45 75 70 65 60 55 Ohms


    OCR Scan
    PDF 1N3993A 1N3994A 1N3995A 1N3996A 1N3997A 1N2990B 1N2991B 1N2992B 1N2993B 1N2994B zener 245 245 zener 10 watt zener diode ZENER DIODE 1N2976B diode Lz zener LN298 50 Watt Zener Diode 1N2828B

    LZ-230 zener diode

    Abstract: lz 04 "50 watt zener diode" zener 7.5 B 47
    Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current |ZM TYPE NO. Zener Voltage V z @ lz Test Current lz


    OCR Scan
    PDF 1N3993A 1N3994A 1N3995A 1N3996A 1N3997A 1N3998A 1N3999A/1N2970B 1N4000A/1N2971B 1N2972B 1N2973B LZ-230 zener diode lz 04 "50 watt zener diode" zener 7.5 B 47

    50 Watt Zener Diode

    Abstract: 10 watt zener diode LN298 1N2990B TLC 1050 diode Lz zener ZENER DIODE 1N2976B zener diode 1n4553B 6.8 B1 zener 1N2991B
    Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current IZM TYPE NO. Zener Voltage V z @ lz Test Current lz


    OCR Scan
    PDF 1N3993A 1N3994A 1N3995A 1N3996A 1N3997A 1N2990B 1N2991B 1N2992B 1N2993B 1N2994B 50 Watt Zener Diode 10 watt zener diode LN298 TLC 1050 diode Lz zener ZENER DIODE 1N2976B zener diode 1n4553B 6.8 B1 zener