SMB5349B
Abstract: SMB5338B
Text: SMB5338B~SMB5369B Zener diode Features 1. For surface mounted applications 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol
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SMB5338B
SMB5369B
Tamb75
1-Apr-2006
DO-214AA
SMB5349B
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Untitled
Abstract: No abstract text available
Text: 1N5338B~1N5369B Zener diode Features 1. Low profile package 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV
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1N5338B
1N5369B
1-Jan-2006
DO-15
1N5339B
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Untitled
Abstract: No abstract text available
Text: SMB5338B~SMB5369B Zener diode Features 1. For surface mounted applications 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol
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SMB5338B
SMB5369B
1-Nov-2006
DO-214AA
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Untitled
Abstract: No abstract text available
Text: MPS-080917P-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-080917P-85 is a low noise , high dynamic range amplifier designed
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MPS-080917P-85
MPS-080917P-85
NMT-900
080917P
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Untitled
Abstract: No abstract text available
Text: MPS-090917N-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-090917N-85 is a low noise , high dynamic range amplifier designed
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MPS-090917N-85
MPS-090917N-85
090917N
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Untitled
Abstract: No abstract text available
Text: MPS-080917N-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 0.8 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-080917N-85 is a low noise , high dynamic range amplifier designed
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MPS-080917N-85
MPS-080917N-85
NMT-900
080917N
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Untitled
Abstract: No abstract text available
Text: SMB5338B~SMB5369B Zener diode Features 1. For surface mounted applications 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol
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SMB5338B
SMB5369B
Tamb75
1-Nov-2006
DO-214AA
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MPS-090917P-85
Abstract: 920 diode zener mps 940
Text: MPS-090917P-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-85 is a low noise , high dynamic range amplifier designed
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MPS-090917P-85
MPS-090917P-85
090917P
920 diode zener
mps 940
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MPS-090917N-85
Abstract: 920 diode zener 930 diode zener
Text: MPS-090917N-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-090917N-85 is a low noise , high dynamic range amplifier designed
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MPS-090917N-85
MPS-090917N-85
090917N
920 diode zener
930 diode zener
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MPS-080917P-85
Abstract: NMT-900
Text: MPS-080917P-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-080917P-85 is a low noise , high dynamic range amplifier designed
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MPS-080917P-85
MPS-080917P-85
NMT-900
080917P
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Untitled
Abstract: No abstract text available
Text: MPS-090917P-85 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-85 is a low noise , high dynamic range amplifier designed
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MPS-090917P-85
MPS-090917P-85
090917P
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Untitled
Abstract: No abstract text available
Text: MPS-0809A9-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 6.0 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 16 dB Typical Gain The MPS-0809A9-85 is a low noise , high dynamic range amplifier designed
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MPS-0809A9-85
MPS-0809A9-85
NMT-900
0809A9
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MPS-0809A9-85
Abstract: NMT-900 rf power amplifier 850 MHZ diode 910
Text: MPS-0809A9-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 6.0 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 16 dB Typical Gain The MPS-0809A9-85 is a low noise , high dynamic range amplifier designed
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MPS-0809A9-85
MPS-0809A9-85
NMT-900
0809A9
rf power amplifier 850 MHZ
diode 910
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MPS-080917N-85
Abstract: NMT-900
Text: MPS-080917N-85 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 0.8 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-080917N-85 is a low noise , high dynamic range amplifier designed
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MPS-080917N-85
MPS-080917N-85
NMT-900
080917N
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Untitled
Abstract: No abstract text available
Text: MPS-0809A9-82 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 6.0 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 16 dB Typical Gain The MPS-0809A9-82 is a low noise , high dynamic range amplifier designed
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MPS-0809A9-82
MPS-0809A9-82
NMT-900
0809A9
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Untitled
Abstract: No abstract text available
Text: MPS-090917P-82 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-82 is a low noise , high dynamic range amplifier designed
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MPS-090917P-82
MPS-090917P-82
Fre50
090917P
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MPS-0809A9-82
Abstract: NMT-900 Zener Diode high frequency applications
Text: MPS-0809A9-82 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 6.0 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 16 dB Typical Gain The MPS-0809A9-82 is a low noise , high dynamic range amplifier designed
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MPS-0809A9-82
MPS-0809A9-82
NMT-900
0809A9
Zener Diode high frequency applications
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MPS-090917P-82
Abstract: No abstract text available
Text: MPS-090917P-82 925 to 960 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 1.1 dB Typ. 7.5 Volt Bias High +44 dBm Typ. IP3 26% High Power Added Effeciency 14.5 dB Typical Gain The MPS-090917P-82 is a low noise , high dynamic range amplifier designed
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MPS-090917P-82
MPS-090917P-82
090917P
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1N5338B
Abstract: 1n5339b
Text: 1N5338B~1N5369B Zener diode Features 1. Low profile package 2. Excellent clamping capability 3. Glass passivated junction 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV
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Original
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1N5338B
1N5369B
Tamb75
1-Nov-2006
DO-15
1N5339B
1n5339b
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Untitled
Abstract: No abstract text available
Text: MPS-080917N-82 870 to 925 MHz Low Noise Receiver Amplifier www.mwtinc.com Email: info@mwtinc.com Features Very Low Noise 0.8 dB Typ. 7.5 Volt Bias High +36 dBm Typ. IP3 26% High Power Added Effeciency 13.5 dB Typical Gain The MPS-080917N-82 is a low noise , high dynamic range amplifier designed
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MPS-080917N-82
MPS-080917N-82
NMT-900
080917N
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ZENER DIODE 5.1V
Abstract: CAPACITOR 33PF DB-55035S-930 SMD Transistor 30w NV SMD TRANSISTOR 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S
Text: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1
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DB-55035S-930
PD55035S
DB-55035S-930
ZENER DIODE 5.1V
CAPACITOR 33PF
SMD Transistor 30w
NV SMD TRANSISTOR
3214W-1-103E
BZX284C5V1
EEVHB1V100P
JESD97
PD55035S
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zener 245
Abstract: 245 zener 10 watt zener diode ZENER DIODE 1N2976B diode Lz zener LN298 50 Watt Zener Diode 1N2828B 1N2990B 1N2991B
Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 Maximum Zener Current Test Current lz Zener Impedance Zz Volts mA 1N2990B 1N2991B 1N2992B 1N2993B 1N2994B 33 36 39 43 45 75 70 65 60 55 Ohms
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1N3993A
1N3994A
1N3995A
1N3996A
1N3997A
1N2990B
1N2991B
1N2992B
1N2993B
1N2994B
zener 245
245 zener
10 watt zener diode
ZENER DIODE 1N2976B
diode Lz zener
LN298
50 Watt Zener Diode
1N2828B
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LZ-230 zener diode
Abstract: lz 04 "50 watt zener diode" zener 7.5 B 47
Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current |ZM TYPE NO. Zener Voltage V z @ lz Test Current lz
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OCR Scan
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1N3993A
1N3994A
1N3995A
1N3996A
1N3997A
1N3998A
1N3999A/1N2970B
1N4000A/1N2971B
1N2972B
1N2973B
LZ-230 zener diode
lz 04
"50 watt zener diode"
zener 7.5 B 47
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50 Watt Zener Diode
Abstract: 10 watt zener diode LN298 1N2990B TLC 1050 diode Lz zener ZENER DIODE 1N2976B zener diode 1n4553B 6.8 B1 zener 1N2991B
Text: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current IZM TYPE NO. Zener Voltage V z @ lz Test Current lz
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OCR Scan
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1N3993A
1N3994A
1N3995A
1N3996A
1N3997A
1N2990B
1N2991B
1N2992B
1N2993B
1N2994B
50 Watt Zener Diode
10 watt zener diode
LN298
TLC 1050
diode Lz zener
ZENER DIODE 1N2976B
zener diode 1n4553B
6.8 B1 zener
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