2sc2655
Abstract: 1345 NPN
Text: 2SC2655 NPN General Purpose Transistors P b Lead Pb -Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol Parameter Test unless otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO
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2SC2655
O-92MOD
500mA
19-Feb-09
O-92MOD
50Typ
2sc2655
1345 NPN
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2SD756
Abstract: 2sd756a 2SB716 Hitachi DSA0097 2SD756 equivalent 2SB715 2SB716A 2SD755
Text: 2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SB715, 2SB716 and 2SB716A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings Ta = 25°C
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2SD755,
2SD756,
2SD756A
2SB715,
2SB716
2SB716A
O-92MOD
2SD756
2sd756a
Hitachi DSA0097
2SD756 equivalent
2SB715
2SB716A
2SD755
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2SC3243
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC3243 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage
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O-92MOD
2SC3243
O-92MOD
100mA
500mA,
2SC3243
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2Sb647a
Abstract: 2sb647
Text: 2SB647 / 2SB647A PNP General Purpose Transistors P b Lead Pb -Free 2 1 3 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 120 V Emitter-Base Voltage VEBO
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2SB647
2SB647A
O-92MOD
09-Dec-08
2SB647
2Sb647a
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TO-92MOD
Abstract: 2SD2213
Text: 2SD2213 Silicon NPN Epitaxial Low Frequency Power Amplifier Features TO-92MOD • Large hFE at low current operation. 2000, at IC = 0.15A Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————–
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2SD2213
O-92MOD
TO-92MOD
2SD2213
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2SD974
Abstract: DSA003638
Text: 2SD974 Silicon NPN Epitaxial ADE-208-1141 Z 1st. Edition Mar. 2001 Application • Power switching • TV horizontal deflection output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD974 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings
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2SD974
ADE-208-1141
O-92MOD
2SD974
DSA003638
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2SD667
Abstract: 2SD667A Hitachi DSA00108
Text: 2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings Ta = 25°C Item Symbol 2SD667 2SD667A
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2SD667,
2SD667A
2SB647/A
O-92MOD
2SD667
2SD667
2SD667A
Hitachi DSA00108
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2sd1978
Abstract: 2SB1387 DSA003638
Text: 2SD1978 Silicon NPN Epitaxial, Darlington ADE-208-1162 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1387 Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 3 2 1 ID 2 kΩ (Typ) 0.5 kΩ (Typ) 1
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2SD1978
ADE-208-1162
2SB1387
O-92MOD
2sd1978
2SB1387
DSA003638
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2sc2230
Abstract: 2SC2230A 2SC2230 GR
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2230/2230A TRANSISTOR NPN 1. EMITTER FEATURE z High voltage: VCEO=180V(2SC2230A) z High DC Current Gain 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-92MOD
O-92MOD
2SC2230/2230A
2SC2230A)
2SC2230A
2SC2230
2sc2230
2SC2230A
2SC2230 GR
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2sc2655
Abstract: equivalent 2SC2655 2SA1020
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020
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O-92MOD
2SC2655
O-92MOD
2SA1020
500mA
2sc2655
equivalent 2SC2655
2SA1020
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2SC2703
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2703 TO-92MOD TRANSISTOR NPN FEATURES High DC Current Gain: hFE=100-320 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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O-92MOD
2SC2703
O-92MOD
100mA
800mA
800mA
2SC2703
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2SC1383
Abstract: 2SA0683 2SA0684 2SC1384 2SC1383 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER
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O-92MOD
2SC1383
2SC1384
O-92MOD
2SA0683
2SA0684.
500mA
500mA
2SC1383
2SA0684
2SC1384
2SC1383 transistor
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2SC2235
Abstract: transistor 2sC2235 2SA965
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2235 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Complementary to 2SA965 2. COLLECTER 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) B Symbol VCBO B
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O-92MOD
2SC2235
O-92MOD
2SA965
-55to
100mA
500mA
500mA,
2SC2235
transistor 2sC2235
2SA965
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2SB562
Abstract: 2SD468 ADE-208-1024 Hitachi DSA0076
Text: 2SB562 Silicon PNP Epitaxial ADE-208-1024 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB562 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
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2SB562
ADE-208-1024
2SD468
O-92MOD
2SB562
2SD468
ADE-208-1024
Hitachi DSA0076
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD KSA931 TRANSISTOR PNP 1.EMITTER FEATURE y Low Frequency Amplifier y Medium Speed Switching 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92MOD
O-92MOD
KSA931
-10mA
-50mA
-500mA,
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA965 TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z Complementary to 2SC2235 z Power Amplifier Applications 2. COLLECTOR 3. EMITTER
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O-92MOD
2SA965
92MOD
2SC2235
-10mA
-120V
IC-100mA
-500mA
-50mA
-100mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSC2328A ＴＯ－９２ＭＯＤ TRANSISTOR（ NPN ） 1.EMITTER FEATURE Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : 2 A Collector-base voltage
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O-92MOD
KSC2328A
500TYP
059TYP
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSC2328A TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage
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O-92MOD
KSC2328A
O-92MOD
500mA
500mA,
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors BD034 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2.5 A Collector-base voltage
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O-92MOD
BD034
O-92MOD
-10mA,
-100V,
-100mA
-200mA
-500mA
-250mA,
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSA910 TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. EMITTER 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-92MOD
KSA910
92MOD
-150V
-10mA
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2229 TO – 92M TO – 92MOD TRANSISTOR NPN 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z High Breakdown Voltage z High Transition Frequency 2. COLLECTOR 3. EMITTER
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O-92MOD
2SC2229
92MOD
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1020 TO-92MOD TRANSISTOR PNP FEATURES Power Amplifier Applications 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol 3. BASE Parameter
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O-92MOD
2SA1020
O-92MOD
-50mA
-500mA
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3DG2482
Abstract: No abstract text available
Text: 3DG2482 i 3DG2482fèNPNM^ 3'hljj$IMm %Sfr&ÿnT; TO-92MOD 2 2.1 Pä#^W Äl7E- Tamb= 25°C fr fv PH # W£ M T O 3OO v Ä ^ f ö - S fö ^ H VCBO 3OO v Ä fe fö -£ Ä fe H VCEO y v Ä M fö-S fö * H VEBO 1OO mA Ic f€iftïtl$ Ta=25 °C O.9 W Ptot 15O °c
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O-92MOD
200mA
10MHz
3DG2482
3DG2482
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2SC2060
Abstract: E8 55A TO-92MOD
Text: TO-92MOD Plastic-Encapsulate Transistors 2S C 2060 TRANSISTO R NPN F E AT U RES Power dissipation TO-92MOD P cm : C ollector current 1 .EMITTER Icm: 2 .COLLECTOR I 1A C ollector-base voltage 3 .BASE I 0.75W (Tamb=25°C) V ( br )c b o : 40 V O perating and storage jun ction tem perature range
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O-92MOD
2SC2060
O-92MOD
E8 55A
TO-92MOD
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