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    925-960 POWER AMPLIFIER Search Results

    925-960 POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM759CH Rochester Electronics LLC LM759 - Power Operational Amplifier, MBCY8 Visit Rochester Electronics LLC Buy
    LM759H/B Rochester Electronics LLC LM759 - Power Operational Amplifier Visit Rochester Electronics LLC Buy
    TL060ID Rochester Electronics LLC TL060 - Low Power JEFT-Input Operational Amplifiers Visit Rochester Electronics LLC Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    925-960 POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SM09296-47L

    Abstract: Stealth Microwave
    Text: Power Amplifiers SM09296-47L 925 MHz to 960 MHz Specifications RF Frequency P1dB Power Output Linear Gain Gain Flatness Over Band Gain Change Over Temp Third Order Intercept OIP3 Input Return Loss Output Return Loss Min 925 Typ Max 960 47 58 ±1 ±1 ±1


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    SM09296-47L 12VDC SM09296-47L Stealth Microwave PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Amplifiers SM09296-43 925 MHz to 960 MHz Specifications RF Frequency P1dB Power Output Linear Gain Gain Flatness Over Band Gain Change Over Temp Third Order Intercept OIP3 Input Return Loss Output Return Loss Min 925 Typ Max 960 43 41 ±1 ±1 ±1 53


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    SM09296-43 12VDC PDF

    SM09296-47

    Abstract: No abstract text available
    Text: Power Amplifiers SM09296-47 925 MHz to 960 MHz Specifications RF Frequency P1dB Power Output Linear Gain Gain Flatness Over Band Gain Change Over Temp Third Order Intercept OIP3 Input Return Loss Output Return Loss Min 925 Typ Max 960 47 58 ±1 ±1 ±1 58


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    SM09296-47 12VDC SM09296-47 PDF

    MAFX-000025-RLOOFR

    Abstract: No abstract text available
    Text: DATA SHEET SKYFR-000738: 925-960 MHz Single Junction Robust Lead Circulator Applications • Power amplifiers • Wireless infrastructure Features • BeO free • Small, surface mount package • Operating frequency range: 925 MHz to 960 MHz • Shipped on tape and reel


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    SKYFR-000738: SKYFR-000738 202756B MAFX-000025-RLOOFR PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SKYFR-000738: 925-960 MHz Single Junction Robust Lead Circulator Applications • Power amplifiers • Wireless infrastructure Features • BeO free • Small, surface mount package • Operating frequency range: 925 MHz to 960 MHz • Shipped on tape and reel


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    SKYFR-000738: SKYFR-000738 02756A PDF

    GSM repeater circuit

    Abstract: AN060 XD010-14S-D4F repeater gsm
    Text: XD010-14S-D4F Y XD010-14SD4F(Y) 925 MHz to 960 MHz Class A/AB 15 W Power Amplifier Module 925 MHz to 960 MHz CLASS A/AB 15 W POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Y Part Number) Package: D Product Description Features


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    XD010-14S-D4F XD010-14SD4F EDS-102936 GSM repeater circuit AN060 repeater gsm PDF

    925-960 filter

    Abstract: 925-960 power amplifier
    Text: Model SM09296-47L 925-960 MHz 50 Watt Linear Power Amplifier FOR GSM APPLICATIONS The SM09296-47L is a 925-960 MHz solid state GaAs amplifier designed for the Cellular/GSM telephony market. Its compact size and ultra high linearity make it ideally suited for systems using CDMA,


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    SM09296-47L SM09296-47L 12VDC 12VDC 925-960 filter 925-960 power amplifier PDF

    925-960 power amplifier

    Abstract: GSM RF module gsm module datasheet
    Text: Model SM09296-43 925-960 MHz 20 Watt Linear Power Amplifier FOR GSM APPLICATIONS The SM09296-43 is a 925-960 MHz solid state GaAs FET amplifier designed for the Cellular/GSM telephony market. It is one of the smallest amplifiers in the industry to deliver 20 watts. The output IP3 is +58


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    SM09296-43 SM09296-43 12VDC 925-960 power amplifier GSM RF module gsm module datasheet PDF

    PTFB092707FH

    Abstract: No abstract text available
    Text: PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 – 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


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    PTFB092707FH PTFB092707FH 270-watt H-37288L-4/2 PDF

    925-960 power amplifier

    Abstract: No abstract text available
    Text: Model SM09296-47 925-960 MHz 50 Watt Linear Power Amplifier FOR GSM APPLICATIONS The SM09296-47 is a 925-960 MHz solid state GaAs FET amplifier designed for the Cellular/GSM telephony market. It is one of the smallest amplifiers in the industry to deliver 50 watts. The output IP3 is +58


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    SM09296-47 SM09296-47 Frequenc38-8586 12VDC 925-960 power amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. SM09296-43 925 MHz to 960 MHz POWER AMPLIFIERS Specifications Min Typ 925 43 41 ±1 ±1 ±1 53 RF Frequency


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    SM09296-43 12VDC PDF

    30424 ic

    Abstract: 48061 54139
    Text: MGA-43828 925–960 MHz Linear Power Amplifier Module Data Sheet Description Features The Avago MGA-43828 is a fully matched, highly linear power amplifier PA designed for use in the 925-960 MHz band. Based on Avago’s proprietary 0.25um GaAs EpHEMT technology, the device features high linearity, gain


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    MGA-43828 MGA-43828 -50dBc AV02-4223EN 30424 ic 48061 54139 PDF

    Untitled

    Abstract: No abstract text available
    Text: MGA-43828 925–960 MHz Linear Power Amplifier Module Product Brief Description Features The Avago MGA-43828 is a fully matched, highly linear power amplifier PA designed for use in the 925-960 MHz band. Based on Avago’s proprietary 0.25um GaAs EpHEMT technology, the device features high linearity, gain


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    MGA-43828 MGA-43828 -50dBc 28-Lead MGA-43828-BLKG MGA-43828-TR1G AV02-4113EN PDF

    amplifier MA-920

    Abstract: PD57045S DB-960-70W
    Text: DB-960-70W RF POWER AMPLIFIER using 2 x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


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    DB-960-70W PD57045S DB-960-70W 30ions amplifier MA-920 PD57045S PDF

    DB-960-90W

    Abstract: PD57060S
    Text: DB-960-90W RF POWER AMPLIFIER using 2 x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


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    DB-960-90W PD57060S DB-960-90W PD57060S PDF

    smd transistor P1D

    Abstract: 1uf 500v capacitor zener diode 5v 75W SMD smd zener diode code DE SMD Transistor 30w w50 smd transistor W50 SMD SMD 1206 RESISTOR 0 OHMS capacitor 47k 500v
    Text: DB-960-70W RF POWER AMPLIFIER using 2 x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


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    DB-960-70W PD57045S DB-960-70W smd transistor P1D 1uf 500v capacitor zener diode 5v 75W SMD smd zener diode code DE SMD Transistor 30w w50 smd transistor W50 SMD SMD 1206 RESISTOR 0 OHMS capacitor 47k 500v PDF

    smd transistor P1D

    Abstract: smd zener diode code DE 75W SMD MX3-30 SMD Transistor 30w 930 diode smd 1uf 500v capacitor capacitor 10pf
    Text: DB-960-70W RF POWER AMPLIFIER using 2 x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


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    DB-960-70W PD57045S DB-960-70W smd transistor P1D smd zener diode code DE 75W SMD MX3-30 SMD Transistor 30w 930 diode smd 1uf 500v capacitor capacitor 10pf PDF

    SMD 1206 RESISTOR 100 OHMS

    Abstract: SMD Transistor 30w smd zener diode code DE p2 10K capacitor c12 zener diode 5v W950 ATC100B DB-960-90W XPD57060S
    Text: DB-960-90W RF POWER AMPLIFIER using 2 x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 90 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY


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    DB-960-90W PD57060S DB-960-90W SMD 1206 RESISTOR 100 OHMS SMD Transistor 30w smd zener diode code DE p2 10K capacitor c12 zener diode 5v W950 ATC100B XPD57060S PDF

    Untitled

    Abstract: No abstract text available
    Text: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. SM09296-47L 925 MHz to 960 MHz POWER AMPLIFIERS Specifications RF Frequency P1dB Power Output Linear Gain


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    SM09296-47L 12VDC 43ector PDF

    Untitled

    Abstract: No abstract text available
    Text: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. SM09296-47 925 MHz to 960 MHz POWER AMPLIFIERS Specifications RF Frequency P1dB Power Output Linear Gain


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    SM09296-47 12VDC PDF

    120W amplifier

    Abstract: SDM-09120 q458
    Text: SDM-09120 Product Description 925-960 MHz Class AB 120W Power Amplifier Module The SDM-09120 120W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a


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    SDM-09120 SDM-09120 AN054, EDS-103478 120W amplifier q458 PDF

    GSM lna

    Abstract: igc1 IBM REV 2.8 ibm rev 2.1 lna gsm 900 IBM REV 2.8 Circuit sheet
    Text: Preliminary IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Features • 925-960 MHz operation for GSM applications • Low power, single 2.8 volt supply Applications • GSM portable transceivers Figure 1. IBM43RCLNA1115 Low Noise


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    IBM43RCLNA1115 lna1115 GSM lna igc1 IBM REV 2.8 ibm rev 2.1 lna gsm 900 IBM REV 2.8 Circuit sheet PDF

    GSM LNA

    Abstract: IBM REV 2.8 gsm amplifier schematic schematic GSM ESD IBM REV 2.8 Circuit sheet IBM Microelectronics igc1 gsm amplifier circuit
    Text: IBM43RCLNA1115 Datasheet SiGe 900 MHz GSM Low-Noise Amplifier with Gain Control Features • 925-960 MHz operation for GSM applications • Low power, single 2.8 volt supply Applications • GSM portable transceivers Figure 1. IBM43RCLNA1115 Low Noise Amplifier


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    IBM43RCLNA1115 IBM43RCLNA1115 lna1115 GSM LNA IBM REV 2.8 gsm amplifier schematic schematic GSM ESD IBM REV 2.8 Circuit sheet IBM Microelectronics igc1 gsm amplifier circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Amplifiers SM09296-43 925MHz to 960MHz Specifications RF Frequency P1dB Power Output Linear Gain Gain Flatness Over Band Gain Change Over Temp Third Order Intercept OIP3 Input Return Loss Output Return Loss Min 925 Typ Max 960 43 41 ±1 ±1 ±1 53


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    SM09296-43 925MHz 960MHz 12VDC PDF