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    921 SMD TRANSISTOR Search Results

    921 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    921 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common


    Original     		PDF MRF6522-70 MRF6522-70R3 MRF6522

    MRF6522-70

    Abstract: mosfet 55 nf 06
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common


    Original     		PDF MRF6522-70 MRF6522-70R3 MRF6522 mosfet 55 nf 06

    921 smd transistor

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522-70R3 MRF6522 921 smd transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performances of this device makes it ideal for large–signal, common source


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    "RF MOSFET"

    Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3 "RF MOSFET" BC847 LP2951 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    LP2951

    Abstract: BC847 921 smd transistor
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Freescale Semiconductor, Inc. Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522 LP2951 BC847 921 smd transistor

    SPS 16-H

    Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3 SMD potentiometer
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3 SPS 16-H BC847 LP2951 MRF6522-70 MRF6522-70R3 SMD potentiometer

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70 MRF6522-70R3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522

    Untitled

    Abstract: No abstract text available
    Text: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522-

    smd transistor marking j1

    Abstract: No abstract text available
    Text: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522- smd transistor marking j1

    BC847

    Abstract: LP2951 MRF6522-70 MRF6522-70R3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522-70 BC847 LP2951 MRF6522-70 MRF6522-70R3

    MOS marking JC

    Abstract: SOT c5 87 BC847 EB212 LP2951 MRF6522-70 MRF6522-70R3 marking amplifier j02 smd transistor marking C14 r
    Text: Document Number: MRF6522-70 Rev. 9, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6522-70R3 LIFETIME BUY Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522--70 MRF6522-70R3 MOS marking JC SOT c5 87 BC847 EB212 LP2951 MRF6522-70 MRF6522-70R3 marking amplifier j02 smd transistor marking C14 r

    NI-600

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6522-70 Rev. 9, 10/2008 RF Power Field Effect Transistor MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common source


    Original     		PDF MRF6522--70 MRF6522-70R3 MRF6522--70 NI-600

    05n03l

    Abstract: 05N03LA P-TO252-3-11 IPD05N03LA IPU05N03LA JESD22 05n03
    Text: IPD05N03LA IPU05N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID 50 A • N-channel • Logic level


    Original     		PDF IPD05N03LA IPU05N03LA P-TO252-3-11 P-TO251-3-21 Q67042-S4144 05N03LA 05n03l 05N03LA P-TO252-3-11 IPD05N03LA IPU05N03LA JESD22 05n03

    05N03

    Abstract: Q67042-S4141 05N03L SMD fet MARKING 34 D55 SMD CODE MARKING IPB05N03LA IPB05N03LAG 05n03la
    Text: IPB05N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 4.6 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB05N03LA PG-TO263-3-2 Q67042-S4141 05N03LA 05N03 Q67042-S4141 05N03L SMD fet MARKING 34 D55 SMD CODE MARKING IPB05N03LAG 05n03la

    05N03

    Abstract: 05N03LA IPB05N03LA JESD22 IPB05N03LAG
    Text: IPB05N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 4.6 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPB05N03LA PG-TO263 05N03LA 05N03 05N03LA JESD22 IPB05N03LAG

    05N03LA

    Abstract: 05n03l 05N03 P-TO252-3-11 P-TO252 S4230 diode SMD marking code 27 P-TO251 marking CODE R SMD DIODE smd marking av
    Text: OptiMOS 2 Power-Transistor IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03l 05N03 P-TO252-3-11 P-TO252 S4230 diode SMD marking code 27 P-TO251 marking CODE R SMD DIODE smd marking av

    Untitled

    Abstract: No abstract text available
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		PDF IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11

    BC847

    Abstract: LP2951 MRF6522-70 MRF6522-70R3
    Text: MOTOROLA O rder this docum ent by M RF6522—70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF6522-70 M RF6522-70R3 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs D e s ig n e d fo r G S M 9 0 0 fre q u e n c y b a n d , th e h igh g a in and b ro a d b a n d


    OCR Scan     		PDF RF6522â MRF6522-70 MRF6522-70R3 MRF6522â BC847 LP2951 MRF6522-70R3

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


    OCR Scan     		PDF