IRF9530N
Abstract: IR P-Channel mosfet
Text: PD - 91482C IRF9530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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PDF
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91482C
IRF9530N
-100V
O-220
IRF9530N
IR P-Channel mosfet
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IRF9530N
Abstract: No abstract text available
Text: PD - 91482C IRF9530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier
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Original
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PDF
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91482C
IRF9530N
-100V
O-220
IRF9530N
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Untitled
Abstract: No abstract text available
Text: PD - 91482C IRF9530N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier
|
Original
|
PDF
|
91482C
IRF9530N
-100V
O-220
|