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    IRG4BC30U

    Abstract: No abstract text available
    Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91452E IRG4BC30U O-220AB O-220AB IRG4BC30U

    Untitled

    Abstract: No abstract text available
    Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91452E IRG4BC30U O-220AB O-220AB

    ic AM 12A

    Abstract: IRG4BC30U
    Text: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91452E IRG4BC30U O-220AB O-220AB ic AM 12A IRG4BC30U