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    IRLMS6702

    Abstract: No abstract text available
    Text: PD - 91414C IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-Channel MOSFET D D G Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


    Original     		91414C IRLMS6702 EIA-481 EIA-541. IRLMS6702 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91414C IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-Channel MOSFET D D G 1 6 2 5 3 4 A D VDSS = -20V D RDS(on) = 0.20Ω S Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing


    Original     		91414C IRLMS6702 EIA-481 EIA-541. PDF