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    Abstract: No abstract text available
    Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS =100V RDS(on) = 0.10Ω G11


    Original     		PDF 91349C IRL530NS/L IRL530NS) IRL530NL) EIA-418.

    ak 957 1542 d

    Abstract: AN-994 IRL530N IRL530NL IRL530NS IRL530NSL
    Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11


    Original     		PDF 91349C IRL530NS/L IRL530NS) IRL530NL) EIA-418. ak 957 1542 d AN-994 IRL530N IRL530NL IRL530NS IRL530NSL

    ak 957 1542 d

    Abstract: AN-994 IRL530N IRL530NL IRL530NS
    Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11


    Original     		PDF 91349C IRL530NS/L IRL530NS) IRL530NL) die22 EIA-418. ak 957 1542 d AN-994 IRL530N IRL530NL IRL530NS