PCIM 176
Abstract: failure analysis IGBT SKiM601GD126DM thermal cycling data weibull IGBT parallel power cycling igbt sixpack SKIM PC10 Ibgt semikron skim
Text: Advanced Power Modules with AlN-Substrates – Extending Current Capability and Lifetime U.Scheuermann SEMIKRON Elektronik GmbH, Sigmundstraße 200, 90431 Nuremberg, Germany Tel.: +49-911-6559-381 Fax: +49-911-6559-414 E-mail: uwe.scheuermann@semikron.com
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IN1200
Abstract: semikron IGBT IGBT DRIVER SEMIKRON SEMIKRON SEMIKRON BOARD semikron IGBT skiip semikron thermal switch semikron skiip ups igbt types
Text: Further information: Press Release 01 / 2000 e: 18.05.2000 Rickmer Heubeck Tel.:+49-911-6559-208 Fax:+49-911-6559-262 r.heubeck@semikron.com http:\\www.semikron.com SEMIKRON introduces a new family of semiconductor modules SKiM – a new standard for IGBT modules in SKiiP technology
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D-90431
/5/FO/000/014/Rev
IN1200
semikron IGBT
IGBT DRIVER SEMIKRON
SEMIKRON
SEMIKRON BOARD
semikron IGBT skiip
semikron thermal switch
semikron skiip ups
igbt types
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Untitled
Abstract: No abstract text available
Text: SEMiX 452GB126HD Absolute Maximum Ratings Symbol Conditions IGBT / * 2 / ')1 * 278 ()*. # '(11 341 " 51 * 661 " 911 " ; (1 '1 ? () * 6)1 " 51 * (31 " 911 " 'A11 " 911 " B 31 , C ')1
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452GB126HD
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HP 316J
Abstract: HP-316J H BRIDGE inverters circuit diagram using igbt single phase inverter IGBT driver IGBT DRIVER Analog Devices 1 phase inverter using igbt 50V 5A datasheet IGBT driver IC with PWM output SEMIKRON full bridge inverter 3 phase IGBT gate driver 3 phase rectifier circuit diagram igbt
Text: HIGH POWER FOUR CHANNEL IGBT DRIVER IC S. Pawel*, J. Lehmann*, R. Herzer*, M. Netzel* Semikron Elektronik GmbH; Sigmundstrasse 200, D-90431 Nuernberg; Germany; Tel. +49-911-6559-406; FAX +49-911-6559-337;e-mail r.herzer@semikron.com; * TU Ilmenau, PF 10 05 65, D-98684 Ilmenau; Germany
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D-90431
D-98684
ISPSD99;
HCPL-316J
HP 316J
HP-316J
H BRIDGE inverters circuit diagram using igbt
single phase inverter IGBT driver
IGBT DRIVER Analog Devices
1 phase inverter using igbt 50V 5A datasheet
IGBT driver IC with PWM output SEMIKRON
full bridge inverter
3 phase IGBT gate driver
3 phase rectifier circuit diagram igbt
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911 DIODE
Abstract: No abstract text available
Text: SEMiX 904GB126HD Absolute Maximum Ratings Symbol Conditions IGBT / * 2 / ')1 * 256 ()*. # '(11 3(1 " 31 * )41 " '(11 " 8 (1 / '() * '1 = () * 4) " 31 * )') " '(11 " ?911 " 911 " @ A1 , B ')1
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904GB126HD
911 DIODE
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Untitled
Abstract: No abstract text available
Text: SHD118146 SHD118146A SHD118146B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 911, REV. - HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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SHD118146
SHD118146A
SHD118146B
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SHD118146
Abstract: SHD118146A SHD118146B
Text: SHD118146 SHD118146A SHD118146B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 911, REV. - HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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SHD118146
SHD118146A
SHD118146B
SHD118146
SHD118146A
SHD118146B
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Untitled
Abstract: No abstract text available
Text: SHD118146 SHD118146B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 911, REV. A HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Soft Reverse Recovery at Low and High Temperature
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SHD118146
SHD118146B
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diode 2500A
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle Diode Fast Diode D 911 SH 45T S Features • Specially designed for snubberless operation • 140°C maximum junction temperature • Low losses, soft recovery • Electroactive passivation by a-C:H Elektrische Eigenschaften / Electrical properties
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50HIFM
diode 2500A
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Untitled
Abstract: No abstract text available
Text: R23DR20A3 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current290 @Temp (øC) (Test Condition)140 V(RRM)(V) Rep.Pk.Rev. Voltage2.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.6.8k V(FM) Max.(V) Forward Voltage1.45 @I(FM) (A) (Test Condition)911 @Temp. (øC) (Test Condition)
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R23DR20A3
Current290
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Untitled
Abstract: No abstract text available
Text: R23DR20AF Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current290 @Temp (øC) (Test Condition)140 V(RRM)(V) Rep.Pk.Rev. Voltage2.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.6.8k V(FM) Max.(V) Forward Voltage1.45 @I(FM) (A) (Test Condition)911 @Temp. (øC) (Test Condition)
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R23DR20AF
Current290
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ASIC R2
Abstract: mosfet DPAK y parameter of mosfet design of mosfet based power supply Parallel operation mosfet POWER MOSFET APPLICATION NOTE BODY EFFECT OF MOSFET BPSG
Text: VISHAY SILICONIX Power ICs and Power MOSFETs Application Note 911 Power MOSFET in High-Side Operating Modes, Possible Failure Modes, and Failure Signatures By Kandarp Pandya Power MOSFETs in high-side application can fail under any one of the following modes of operation:
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27-Apr-09
ASIC R2
mosfet DPAK
y parameter of mosfet
design of mosfet based power supply
Parallel operation mosfet
POWER MOSFET APPLICATION NOTE
BODY EFFECT OF MOSFET
BPSG
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CMOZ5V6
Abstract: ADP1821 EE-170 ADP2105 BAT54 C0805 CMST2222A IRF7821 IRF7834
Text: AN-911 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com A Detailed Guide to Powering the TigerSHARC Processors by Mark Malaeb INTRODUCTION As technology constantly evolves and silicon geometry shrinks,
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AN-911
R0603
CMOZ5V6
ADP1821
EE-170
ADP2105
BAT54
C0805
CMST2222A
IRF7821
IRF7834
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TLC555IDR
Abstract: H11AA2 1N914 CH1786 IN4148 LH1500 1 line 2 phone switch telephone ring generator circuit pstn 1N914 diode free
Text: Application Note #129: 911 Emergency Interrupt Circuit for CH1786 Modem Modules INTRODUCTION Application Note # 129 describes an external circuit that can be used with the CH1786 modem module to automatically disconnect an “in process” data transmission activity and relinquish the PSTN line for immediate
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CH1786
CH1786
TLC555IDR
H11AA2
1N914
IN4148
LH1500
1 line 2 phone switch
telephone ring generator circuit
pstn
1N914 diode free
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RECTIFIER DIODE D100
Abstract: IFM D100 T75 TYPE 2000 106 35K 721 106 35K 106 35K 045 D748N-2800 DSW27 AL 2450 dv GTO MODULE
Text: IGBT and GCT – Freewheeling Diodes Type V DRM V D 911 SH D 1031 SH D 1331 SH • D 1641 SX ■ D 1181 SX ■ D 1441 SX D 931 SH D 1131 SH D 1951 SH V(D)D *) kV Tc = 25 typ. I(FSM) kA sin, 10 ms Tvj max ∫i2dt A2s • 103 sin, 10 ms Tvj max V(F)/I(FM) V/2,5 kA
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Untitled
Abstract: No abstract text available
Text: SK30GB128 " # *+ ,% Absolute Maximum Ratings Symbol Conditions IGBT $- ". # *+ , ". # 0*+ , (56 0*11 $ 2+ 3 " # 41 , *+ 3 +1 3 8 *1 $ ". # 0*+ , 01 = " # *+ , 2? 3 " # 41 , *+ 3 (56# * ( $ # 911 $: $7- ; *1 $:
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SK30GB128
SK30GAL128
SK30GAR128
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SK30GAL128
Abstract: SK30GAR128 SK30GB128
Text: SK30GB128 " # *+ ,% Absolute Maximum Ratings Symbol Conditions IGBT $- ". # *+ , ". # 0*+ , (56 0*11 $ 2+ 3 " # 41 , *+ 3 +1 3 8 *1 $ ". # 0*+ , 01 = " # *+ , 2? 3 " # 41 , *+ 3 (56# * ( $ # 911 $: $7- ; *1 $:
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SK30GB128
SK30GAL128
SK30GAR128
SK30GAL128
SK30GAR128
SK30GB128
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SK30GAL128
Abstract: SK30GAR128 SK30GB128
Text: SK30GB128 " # *+ ,% Absolute Maximum Ratings Symbol Conditions IGBT $- ". # *+ , ". # 0*+ , (56 0*11 $ 2+ 3 " # 41 , *+ 3 +1 3 8 *1 $ ". # 0*+ , 01 = " # *+ , 2? 3 " # 41 , *+ 3 (56# * ( $ # 911 $: $7- ; *1 $:
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SK30GB128
SK30GAL128
SK30GAR128
SK30GAL128
SK30GAR128
SK30GB128
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SK30GAL128
Abstract: SK30GAR128 SK30GB128
Text: SK30GB128 " # *+ ,% Absolute Maximum Ratings Symbol Conditions IGBT $- ". # *+ , ". # 0*+ , (56 0*11 $ 2+ 3 " # 41 , *+ 3 +1 3 8 *1 $ ". # 0*+ , 01 = " # *+ , 2? 3 " # 41 , *+ 3 (56# * ( $ # 911 $: $7- ; *1 $:
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SK30GB128
SK30GAL128
SK30GAR128
SK30GAL128
SK30GAR128
SK30GB128
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Untitled
Abstract: No abstract text available
Text: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT . / 78 ./( ; $ % SKiM 5 SKiM 601GD126DM Preliminary Data Features & ?= & Values Units 0*11 451 $631% 911 : *1 < 41 = > 0+1 $0*+%
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601GD126DM
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IL-Y-3S-S15C3
Abstract: ir sensor diode IR SENSOR pin configuration
Text: E2P0062-16-911 O K I electronic components OPU872CP_ Capsule Sensor with Light Emitter and Photosensor GENERAL DESCRIPTION The OPU872CP is a capsule sensor which includes both a light emitting diode and a phototransistor in the package w ith connector.
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E2P0062-16--911
OPU872CP_
OPU872CP
872CP
IL-Y-3S-S15C3
OPU872CP
OPU872CP-Prism
IL-Y-3S-S15C3
ir sensor diode
IR SENSOR pin configuration
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Untitled
Abstract: No abstract text available
Text: DATA SH EET MOS FIELD EFFECT TRANSISTOR / ¿ P A 1 9 1 1 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The jtiPAI 911 PACKAGE DRAWING Unit : mm is a switching device which can be driven
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uPA1911
D13455EJ1V0DS00
PA1911
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BU910 SGS
Abstract: BU912
Text: SGS -THOMSON BU910/911 BU912 HIGH VOLTAGE POWER DARLINGTON DESCRIPTION The BU910, BU911, and BU912 are high voltage, silicon NPN transistors in monolithic Darlington configuration in JEDEC TO-220 plastic package, designed for applications such as electronic ignition,
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BU910/
BU912
BU910,
BU911,
BU912
O-220
BU911
G-1855A
Q-M58
S91O-BU910
BU910 SGS
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bt33
Abstract: BU910 BU912 BU911 bt33 darlington SGS911 darlington 1A 500v npn darlington 6A 400V BU910 SGS Darlington T
Text: m ?qgqg37 poaaa?! 3 _ S G S -T H O M S O N ^D O œ illL tlO ir^lO O i S G S-TH0MS0N B U 9 1 0 / 911 B U 912 3QE J> HIGH VOLTAGE POWER DARLINGTON DESCRIPTION The BU910, BU911, and BU912 are high voltage, silicon NPN transistors in monolithic Darlington
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qgqg37
0Q5fl57i
BU910/911
BU912
BU910,
BU911,
BU912
O-220
BU910
BU911
bt33
bt33 darlington
SGS911
darlington 1A 500v
npn darlington 6A 400V
BU910 SGS
Darlington T
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