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    CEM8933

    Abstract: No abstract text available
    Text: A UGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES • -2 0 V , -4.3A , Rds on =90itiQ Rds(on)=1 40mQ Di @Vgs=-4.5V. Di D2 @Vgs=-2.5V. • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.


    OCR Scan     		140itiQ CEM8933 CEM8933 PDF