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    KEMET Corporation C0805C390FBGACTU

    CAP CER 0805
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    DigiKey C0805C390FBGACTU Reel 2,500
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    Avnet Americas C0805C390FBGACTU Reel 9 Weeks 2,500
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    Mouser Electronics C0805C390FBGACTU 1,516
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    KEMET Corporation C1206C390FBGACTU

    CAP CER 1206
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    DigiKey C1206C390FBGACTU Reel 2,500
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    Vishay Vitramon GA1812A390FBGAR31G

    CAP CER 39PF 1KV C0G/NP0 1812
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    DigiKey GA1812A390FBGAR31G Reel 4,000
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    Vishay Vitramon GA1812A390FBGAT31G

    CAP CER 39PF 1KV C0G/NP0 1812
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    DigiKey GA1812A390FBGAT31G Reel 2,000
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    KEMET Corporation C0805C390FBGAC7210

    Cap Ceramic 39pF 630V C0G 1% SMD 0805 125°C Plastic T/R - Tape and Reel (Alt: C0805C390FBGAC7210)
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    Avnet Americas C0805C390FBGAC7210 Reel 10,000
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    90FBGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S643233H

    Abstract: K4S643233H-F
    Text: K4S643233H - F H E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,


    Original     		PDF K4S643233H 32Bit 90FBGA K4S643233H-F

    K4S28323LF

    Abstract: K4S28323LF-F
    Text: K4S28323LF - F H E/N/S/C/L/R Mobile-SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,


    Original     		PDF K4S28323LF 32Bit 90FBGA K4S28323LF-F

    K4M283233H

    Abstract: No abstract text available
    Text: K4M283233H - F H N/G/L/F Mobile SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,


    Original     		PDF K4M283233H 32Bit 90FBGA

    K4S283234F-M

    Abstract: No abstract text available
    Text: K4S283234F-M CMOS SDRAM 4Mx32 SDRAM 90FBGA VDD 2.5V, VDDQ 2.5V Revision 0.1 November 2001 Rev. 0.1 Jan. 2002 K4S283234F-M CMOS SDRAM Revision History Revision 0.0 (Nov. 16. 2001, Final) • Final generation for 4Mx32 2.5V SDRAM FBGA. Revision 0.1 (Jan. 14. 2002, Final)


    Original     		PDF K4S283234F-M 4Mx32 90FBGA 32Bit K4S283234F-M

    K4M56323

    Abstract: K4M56323PG-F
    Text: K4M56323PG-F H E/G/C/F Mobile-SDRAM 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M56323PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M56323PG-F 32Bit 90FBGA K4M56323PG K4M56323

    K4X51323PK-8GD8

    Abstract: K4X51323PI-8GC6 K4X51323PI K4X51323PK-8GC6 K4X51323PK-8G K4X51323PI-8G 90FBGA
    Text: Rev. 1.0, Aug. 2011 K4X51323PK 512Mb K-die Mobile DDR SDRAM 90FBGA with Lead-Free & Halogen-Free VDD / VDDQ = 1.8V / 1.8V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4X51323PK 512Mb 90FBGA K4X51323PK-8GD8 K4X51323PI-8GC6 K4X51323PI K4X51323PK-8GC6 K4X51323PK-8G K4X51323PI-8G

    Untitled

    Abstract: No abstract text available
    Text: K4S643233F-S D E/N/I/P CMOS SDRAM 2Mx32 SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.3 July 2002 Rev. 1.3 July. 2002 K4S643233F-S(D)E/N/I/P CMOS SDRAM Revision History Revision 0.0 (Jan. 2002, Preliminary) • First generation of 2Mx32 SDRAM F-die 90FBGA datasheet (V DD/VDDQ 3.0V/3.0V, 3.3V/3.3V).


    Original     		PDF K4S643233F-S 2Mx32 90FBGA 90FBGA -75/1H/-1L.

    K4M51323PI-HG75

    Abstract: K4M51323PI-HG60 K4M51323PI K4M51323PI-HG k4m51323 K4M51323PIHG75
    Text: Rev. 1.0, Dec. 2009 K4M51323PI 512Mb I-die Mobile SDR SDRAM 16Mb x32, 90FBGA with Lead-Free & Halogen-Free VDD / VDDQ = 1.8V / 1.8V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4M51323PI 512Mb 90FBGA K4M51323PI-HG75 K4M51323PI-HG60 K4M51323PI-HG60 K4M51323PI K4M51323PI-HG k4m51323 K4M51323PIHG75

    K4S563233

    Abstract: K4S563233F
    Text: K4S563233F - F H E/N/G/C/L/F Mobile-SDRAM 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,


    Original     		PDF K4S563233F 32Bit 90FBGA K4S563233

    K4S513233F

    Abstract: No abstract text available
    Text: K4S513233F - M E C/L/F Mobile SDRAM 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,


    Original     		PDF K4S513233F 32Bit 90FBGA

    SAMSUNG LAPTOP

    Abstract: K4M51323LE-M
    Text: K4M51323LE - M E C/L/F Mobile-SDRAM 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M51323LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M51323LE 32Bit 90FBGA SAMSUNG LAPTOP K4M51323LE-M

    K4M56323LD-M

    Abstract: K4M56323LD K4M56323
    Text: K4M56323LD-M E N/U/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.1 December 2002 Rev. 1.1 Dec. 2002 K4M56323LD-M(E)N/U/P CMOS SDRAM 2M x 32Bit x 4 Banks SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • • • • rate Dynamic RAM organized as 4 x 2,097,152 words by 32


    Original     		PDF K4M56323LD-M 8Mx32 90FBGA 32Bit K4M56323LD K4M56323

    K4M56323LD-M

    Abstract: No abstract text available
    Text: K4M56323LD-M E G/S CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR&TCSR) Revision 1.1 December 2002 Rev. 1.1 Dec. 2002 K4M56323LD-M(E)G/S CMOS SDRAM 2M x 32Bit x 4 Banks SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • • • •


    Original     		PDF K4M56323LD-M 8Mx32 90FBGA 32Bit

    K4S64323LF-S

    Abstract: K4S64323LF
    Text: K4S64323LF-S D N/U/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.5 December 2002 Rev. 1.5 Dec 2002 K4S64323LF-S(D)N/U/P CMOS SDRAM 512K x 32Bit x 4 Banks SDRAM FEATURES GENERAL DESCRIPTION • • • • Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.


    Original     		PDF K4S64323LF-S 2Mx32 90FBGA 32Bit K4S64323LF

    K4S283233E-S

    Abstract: No abstract text available
    Text: K4S283233E-S D E/N/G/C/L/F Mobile-SDRAM 1M x 32Bit x 4 Banks SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • • • • rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS • • • • • •


    Original     		PDF K4S283233E-S 32Bit 90FBGA

    K4M56323LE

    Abstract: No abstract text available
    Text: K4M56323LE - M E E/N/S/C/L/R Mobile-SDRAM 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M56323LE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,


    Original     		PDF K4M56323LE 32Bit 90FBGA

    K4M51323PC

    Abstract: samsung cmos dram 4m x 4
    Text: K4M51323PC-S D E/G/C/F Mobile-SDRAM 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • • • • The K4M51323PC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M51323PC-S 32Bit 90FBGA K4M51323PC samsung cmos dram 4m x 4

    Untitled

    Abstract: No abstract text available
    Text: K4M563233E - M E E/N/G/C/L/F Mobile-SDRAM 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M563233E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,


    Original     		PDF K4M563233E 32Bit 90FBGA

    K4M28323LH

    Abstract: HPB-A1
    Text: K4M28323LH - F H N/G/L/F Mobile SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M28323LH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M28323LH 32Bit 90FBGA HPB-A1

    K4M563233D

    Abstract: No abstract text available
    Text: K4M563233D-M E E/N/I/P CMOS SDRAM 8Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.1 December 2002 Rev. 1.1 Dec. 2002 K4M563233D-M(E)E/N/I/P CMOS SDRAM 2M x 32Bit x 4 Banks SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply


    Original     		PDF K4M563233D-M 8Mx32 90FBGA 32Bit K4M563233D

    samsung power supply

    Abstract: K4S513233C
    Text: K4S513233C-ML/N/P CMOS SDRAM 16Mx32 SDRAM 90FBGA VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 K4S513233C-ML/N/P CMOS SDRAM 4M x 32Bit x 4 Banks SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S513233C is 536,870,912 bits synchronous high data


    Original     		PDF K4S513233C-ML/N/P 16Mx32 90FBGA 32Bit K4S513233C 32bits, samsung power supply

    K4S56323PF

    Abstract: No abstract text available
    Text: K4S56323PF-F H G/F Mobile-SDRAM 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4S56323PF-F 32Bit 90FBGA K4S56323PF

    K4S283233F

    Abstract: K4S283233F-M
    Text: K4S283233F-M CMOS SDRAM 4Mx32 SDRAM 90FBGA V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V Revision 0.8 November 2001 Rev. 0.8 Nov. 2001 K4S283233F-M CMOS SDRAM Revision History Revision 0.0 (March 26. 2001, Preliminary) • First generation for 4Mx32 3.0V SDRAM FBGA.


    Original     		PDF K4S283233F-M 4Mx32 90FBGA K4S283233F K4S283233F-M

    K4M51323LC

    Abstract: No abstract text available
    Text: K4M51323LC - S D N/G/L/F Mobile-SDRAM 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V The K4M51323LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M51323LC 32Bit 90FBGA