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    Abstract: No abstract text available
    Text: PD - 90888C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9130 100K Rads (Si) IRHM93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for


    Original
    PDF 90888C O-254AA) IRHM9130 IRHM93130 O-254AA. MIL-PRF-19500

    dd 127 d

    Abstract: IRHM9130 IRHM93130
    Text: PD - 90888C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9130 100K Rads (Si) IRHM93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for


    Original
    PDF 90888C O-254AA) IRHM9130 IRHM93130 O-254AA. MIL-PRF-19500 dd 127 d IRHM9130 IRHM93130