IRHN9130
Abstract: IRHN93130
Text: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for
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Original
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PDF
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90886C
IRHN9130
IRHN93130
-480A/
-100V,
MIL-STD-750,
MlL-STD-750,
IRHN9130
IRHN93130
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Untitled
Abstract: No abstract text available
Text: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for
|
Original
|
PDF
|
90886C
IRHN9130
IRHN93130
-480A/Â
-100V,
MIL-STD-750,
MlL-STD-750,
|