LED905_35_22
Abstract: No abstract text available
Text: High Speed Infrared Emitting Diode, 905 nm, GaAlAs Double Hetero Features • High modulation bandwidth 10 MHz • • • • • • • • • • Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation
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2002/95/EC
2002/96/EC
led905
LED905_35_22
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Untitled
Abstract: No abstract text available
Text: Pulsed Laser Diode Module LC-Series DESCRIPTION The LC-series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a +12 VDC supply and a trigger
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Abstract: No abstract text available
Text: Laser Diodes Pulsed Laser Diode Module LS-Series Description The LS-series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a +12 VDC supply and a
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905 nm Infrared Emitting Diode
Abstract: 1 Watt 808 nm laser diode S10 diode S10 package light sensitive trigger all components
Text: Pulsed Laser Diode Module LS-/LT-Series DESCRIPTION The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply
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7040 TTL
Abstract: LS588 905 nm Infrared Emitting Diode
Text: Pulsed Laser Diode Module LS-/LT-Series Description The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply and a trigger
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Untitled
Abstract: No abstract text available
Text: Pulsed Laser Diode Module LS-Series DESCRIPTION The LS-series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a +12 VDC supply and a trigger
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Abstract: No abstract text available
Text: pulSedlaSerdiodeSandinfraredledS iredS HIGH POWER Pulsed Laser Diodes PGA – PGEW Series LASER DIODES FOR RANGE FINDING Pulsed Laser Diodes – PGA – PGEW Series applications • Range inders • Safety light curtains • Adaptive cruise control
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O-18-â
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Abstract: No abstract text available
Text: Pulsed Laser Diodes and Infrared LEDs IREDs HIGH POWER Pulsed Laser Diodes PGA – PGEW Series LASER DIODES for Range Finding Pulsed Laser Diodes – PGA – PGEW Series Applications • Range finders • Safety light curtains • Adaptive cruise control
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O-18-â
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RLT905-100GS
Abstract: 905 nm Infrared Emitting Diode SOT-148
Text: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT905-100GS TECHNICAL DATA High Power Infrared Laser Diode NOTE! Lasing mode structure: single mode
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RLT905-100GS
OT-148)
RLT905-100GS
905 nm Infrared Emitting Diode
SOT-148
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RLT905-500G
Abstract: 905 nm Infrared Emitting Diode PIN photodiode 500 nm 2 Wavelength Laser Diode photodiode 011
Text: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT905-500G TECHNICAL DATA High Power Infrared Laser Diode NOTE! Lasing mode structure: multi mode
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RLT905-500G
OT-148)
RLT905-500G
905 nm Infrared Emitting Diode
PIN photodiode 500 nm
2 Wavelength Laser Diode
photodiode 011
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laser diode mosfet triggering circuit
Abstract: PULSED LASER DIODE DRIVER spl pl90 0 ll90_3 SPL LL90 SPL PL90_3 2 Wavelength Laser Diode mosfet triggering circuit adaptive cruise control laser diode lifetime
Text: Opto Semiconductors Overview: OSRAM Opto Semiconductors Pulsed Laser Diodes 1. Applications of high power pulsed laser diodes OSRAM Opto Semiconductors pulsed laser diodes provide high power tens of watts short (several nanoseconds) optical pulses in the near infra-red regime.
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905 nm Infrared Emitting Diode
Abstract: RLT905-300GS
Text: ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT905-300GS TECHNICAL DATA High Power Infrared Laser Diode NOTE! Lasing mode structure: single mode
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RLT905-300GS
OT-148)
905 nm Infrared Emitting Diode
RLT905-300GS
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Abstract: No abstract text available
Text: High Power Pulsed Laser Diodes 905-Series FEATURES Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package APPLICATIONS
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905-Series
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Text: High Power Pulsed Laser Diodes 905-Series Features - Single and stacked devices up to 130 Watts - Proven AlGaAs high reliability structure - 1 W/A efficiency with 25° beam divergence - Excellent temperature stability - Hermetic and custom designed package
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905-Series
905-Series
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Untitled
Abstract: No abstract text available
Text: High Power Pulsed Laser Diodes 905-Series FEATURES Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package APPLICATIONS
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905-Series
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Untitled
Abstract: No abstract text available
Text: High Power Pulsed Laser Diodes 905-Series FEATURES Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package
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905-Series
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Abstract: No abstract text available
Text: Laser Diodes High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ Multi-junction devices up to 75 W 75 µm, 150 µm and 225 µm source size 2.6 W/A efficiency Proven InGaAs / GaAs high reliability structure
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905D1S3J0XX
lcc/9051s3j0xx
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QEB373
Abstract: QSB363
Text: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 880nm, AlGaAs
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QEB373
880nm,
QSB363
QEB373
QSB363
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QEB373
Abstract: No abstract text available
Text: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 880nm, AlGaAs
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QEB373
880nm,
QSB363
QEB373
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QEB373
Abstract: No abstract text available
Text: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 875nm, AlGaAs
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QEB373
875nm,
QSB363
QEB373
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Untitled
Abstract: No abstract text available
Text: High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX FEATURES Multi-junction devices up to 75 W 75 m, 150 μm and 225 μm source size 2.6 W/A efficiency Proven InGaAs / GaAs high reliability structure High power multi-junction structure for narrow far
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905D1S3J0XX
9051s3j0xx
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905D1S
Abstract: No abstract text available
Text: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES • Multi-junction devices up to 40 W • Proven InGaAs / GaAs high reliability structure High power multi-junction structure for narrow far field Excellent temperature stability Hermetic and custom designed package
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905D1S2J0XX
9051s2j0xx
905D1S
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Untitled
Abstract: No abstract text available
Text: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES Multi-junction devices up to 40 W Proven InGaAs / GaAs high reliability structure High power multi-junction structure for narrow far field Excellent temperature stability Hermetic and custom designed package
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905D1S2J0XX
9051s2j0xx
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LP30R
Abstract: I627
Text: HLP20R, HLP30R, HLP40R Infrared Emitting Diodes IRED Description H L P 2 0 R , H LP 30R and H LP 40R are G a A lA s infrared em itting diodes with single heterojunction structure. They offer a wide range o f wavelength and ou t put pow er, and are suitable for various types o f
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HLP20R,
HLP30R,
HLP40R
HLP40R
LP30R
I627
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