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    2SC5238

    Abstract: ITR07974 ITR07975 ITR07976 ITR07977 ITR07978
    Text: Ordering number:ENN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN5126 2SC5238 100ns 2SC5238] 2SC5238 ITR07974 ITR07975 ITR07976 ITR07977 ITR07978

    2sc5238

    Abstract: TA-0415
    Text: Ordering number:EN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF EN5126 2SC5238 100ns 2SC5238] 2sc5238 TA-0415

    2SC5245

    Abstract: ITR07984 ITR07985 ITR07986 ITR07987 51841 IC163 sanyo 1042
    Text: Ordering number:ENN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).


    Original     		PDF ENN5184A 2SC5245 S21e2 11GHz 2059B 2SC5245] 2SC5245 ITR07984 ITR07985 ITR07986 ITR07987 51841 IC163 sanyo 1042

    51841

    Abstract: sanyo 1042 51842 EN518 2SC5245
    Text: Ordering number:EN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Package Dimensions unit:mm 2059B 0.3 0.15 0.2 0.425 [2SC5245] 3 2.1 0 to 0.1 0.425 • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).


    Original     		PDF EN5184A 2SC5245 2059B 2SC5245] S21e2 11GHz 51841 sanyo 1042 51842 EN518 2SC5245

    transistor a1275

    Abstract: a1275 transistor IC A1302
    Text: Ordering number:ENN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).


    Original     		PDF ENN5184A 2SC5245 11GHz 2059B 2SC5245] transistor a1275 a1275 transistor IC A1302

    2SK2218

    Abstract: KT 0038 2SK22
    Text: Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches.


    Original     		PDF ENN5202 2SK2218 2SK2218] 25max 2SK2218 KT 0038 2SK22

    2SK2218

    Abstract: enn5202
    Text: Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions • Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs |.


    Original     		PDF ENN5202 2SK2218 2SK2218] 25max 2SK2218 enn5202

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN5126 2SC5238 100ns 2SC5238]

    LA708

    Abstract: DIP30S 5257 LA7140 LC6546N
    Text: KNo. N 5257 SA %Y D / = m m m t t .= a —x ‘ No. 5257 / / 90195 D I P 3 0 S V'-Oi, » t f t o r S V £ tY . r ffiffli'fc fc 't'lf L-C CtD/cif TIB C . ^LfccDT- w 7?^< 5 1,'Mi 'iliL hif.i-4-. 33 LA7083, LA7103, I.A7M0, LC6546N 2. n T i] ji'J DIP30S ^ " j fT '-V D M ± & © !¥£


    OCR Scan     		PDF DIP30S la7083, la7103, la7140, lc6546n 90195yk ns5257-1/1ï LA708 5257 LA7140 LC6546N

    transistor cq 529

    Abstract: 2SC5245 51842 CQ 734 G TRANSISTOR cq 802
    Text: Ordering number:EN 5184A SAMO N0.5184A i 2SC5245 NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f= 1GHz . : NF = 1.4dB typ (f = 1.5GHz). • High gain : I S21e I 2= lOdB typ (f= 1.5GHz).


    OCR Scan     		PDF 2SC5245 transistor cq 529 51842 CQ 734 G TRANSISTOR cq 802

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).


    OCR Scan     		PDF EN5126 2SC5238 100ns 90195YK TA-0415 D0S0412

    2SK2218

    Abstract: No abstract text available
    Text: Ordering num ber: E N 5202 _ 2SK2218 N-Channel Junction Silicon FET No.5202 High-Frequency Low-Noise Amp Applications Features • Adoption of FBET process. • Amateur radio equipment. • UHF amplifiers, MIX, OSC, analog switches. • Large I y f8 I .


    OCR Scan     		PDF EN5202 2SK2218