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    9016 TRANSISTOR SPECIFICATION Search Results

    9016 TRANSISTOR SPECIFICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    9016 TRANSISTOR SPECIFICATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 7333

    Abstract: BU426A
    Text: BU426A Power Transistor High Voltage Switching BU426A type is a fast switching high voltage transistor, more specially intended for operating in colour TV supply systems. Features: • Collector-Emitter sustaining voltage VCEO sus = 400V (Minimum) - BU426A.


    Original     		PDF BU426A BU426A BU426A. transistor 7333

    transistor for horizontal deflection output

    Abstract: NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor
    Text: BU406 7A Power Transistor, 200V High Voltage Switching Features: High voltage, high speed transistor for horizontal deflection output stages of TV and CTV circuits. • Collector-Emitter Sustaining Voltage VCEV = 400V Minimum . • Low Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 5.0A.


    Original     		PDF BU406 transistor for horizontal deflection output NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor

    BUX80

    Abstract: 928 transistor NPN Transistor 50A 400V
    Text: BUX80 Power Transistor High Voltage Power Transistors are designed for use in high-voltage, high-speed, power switching in inductive circuit, motor control, solenoid and relay drivers. Features: • Collector-Emitter Sustaining VoltageVCEO sus = 400V (Minimum).


    Original     		PDF BUX80 BUX80 928 transistor NPN Transistor 50A 400V

    7333 A

    Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333
    Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70


    Original     		PDF MPSA06 7333 A transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333

    MPSA14

    Abstract: transistor 7333
    Text: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H K 5° 1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration 1. Collector 2. Base 3. Emitter Page 1


    Original     		PDF MPSA14 MPSA14 transistor 7333

    BU208D

    Abstract: NPN Transistor 1500V 20a H 9645
    Text: BU208D Horizontal Deflection Transistor NPN Silicon Horizontal Defection Transistors with integrated damper diodes are specifically designed for use in large screen colour deflection circuits. Features: • VCES = 1500V VCEO sus = 700V (Minimum). • Low Saturation


    Original     		PDF BU208D BU208D NPN Transistor 1500V 20a H 9645

    transistor BC461

    Abstract: BC461 BC461 transistor CHARACTERISTICS OF BC461
    Text: BC461 Medium Power Transistor Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • PNP Epitaxial Planar Silicon Transistors. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39


    Original     		PDF BC461 transistor BC461 BC461 BC461 transistor CHARACTERISTICS OF BC461

    MJE13005

    Abstract: MJE-13005 MJE130 transistor mje13005 circuit based on MJE13005 8805 VOLTAGE REGULATOR MJE13005 TRANSISTOR F 9016 transistor transistor 7333
    Text: MJE13005 Power Transistor Switchmode Series NPN Power Transistors are designed for use in high-voltage, high-speed, power switching in inductive circuits, they are particularly suited for 115 and 220V switchmode applications such as switching regulator's, inverters, DC-DC


    Original     		PDF MJE13005 MJE13005 MJE-13005 MJE130 transistor mje13005 circuit based on MJE13005 8805 VOLTAGE REGULATOR MJE13005 TRANSISTOR F 9016 transistor transistor 7333

    npn darlington transistor 200 watts

    Abstract: transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806
    Text: BU806 Darlington Power Transistor Fast Switching Darlington Transistor are high voltage, high current devices for fast switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 200V (Minimum). • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5V (Maximum) at IC = 5.0A, IB = 50mA.


    Original     		PDF BU806 npn darlington transistor 200 watts transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806

    bf199 equivalent

    Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF
    Text: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40


    Original     		PDF BF199 bf199 equivalent BF199 transistor NPN BF199 bf199 transistor BF199 RF

    2N3442

    Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn
    Text: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage


    Original     		PDF 2N3442 2N3442 transistor 2n3442 npn 9016 transistor transistor 9016 npn

    9275 transistor

    Abstract: transistor k 208 MPSA42 MPSA42 multicomp
    Text: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.


    Original     		PDF MPSA42 9275 transistor transistor k 208 MPSA42 MPSA42 multicomp

    MPSA42

    Abstract: No abstract text available
    Text: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.


    Original     		PDF MPSA42 MPSA42

    Transistor C G 774 6-1

    Abstract: transistor 2N4033 2N4033
    Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53


    Original     		PDF 2N4033 Transistor C G 774 6-1 transistor 2N4033 2N4033

    NPN 200 VOLTS POWER TRANSISTOR

    Abstract: transistor buv48a npn 9016 transistor NPN Transistor 8A transistor 9016 transistor Ic 4A datasheet NPN BUV48A transistor 7333
    Text: BUV48A Power Transistor High Voltage Switching Switchmode Series NPN Power Transistors are designed for use in high-voltage, highspeed, power switching regulators, converters, inverters, motor control system application. Features: • Collector-Emitter sustaining voltage VCEO sus = 450V (Minimum).


    Original     		PDF BUV48A NPN 200 VOLTS POWER TRANSISTOR transistor buv48a npn 9016 transistor NPN Transistor 8A transistor 9016 transistor Ic 4A datasheet NPN BUV48A transistor 7333

    bf199 equivalent

    Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
    Text: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40


    Original     		PDF BF199 bf199 equivalent bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199

    TO-92 CASE MPSA06

    Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06
    Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70


    Original     		PDF MPSA06 TO-92 CASE MPSA06 F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06

    MPSA44

    Abstract: 9016 transistor
    Text: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages, Low


    Original     		PDF MPSA44 MPSA44 9016 transistor

    pin configuration pnp transistor mpsa92

    Abstract: mpsa92 MPSA42 9016 transistor
    Text: MPSA92 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • PNP Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,


    Original     		PDF MPSA92 MPSA42. pin configuration pnp transistor mpsa92 mpsa92 MPSA42 9016 transistor

    transistor c 9018

    Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
    Text: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF


    OCR Scan     		PDF T0-92B 500fi 10kfi transistor c 9018 Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor

    CP1005

    Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
    Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I


    OCR Scan     		PDF KM90II KM90I5 KM901I/8 KM90II/8 KM90I4 KM9015 KM90I: KM90i to-92a CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014

    9011 9012 9013 9014 9018

    Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
    Text: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER


    OCR Scan     		PDF CL9000 T0-92B 10kfi 9011 9012 9013 9014 9018 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015

    AM9016

    Abstract: AM9016EPC AM9016DPC AM9016FPC AM9016EDC AM9016CPC AM9016DDC AM9016CDC AM9016FDC am9016e
    Text: Am9016 16,384 x 1 D ynam ic R/W Random A ccess M em ory DISTINCTIVE CHARACTERISTICS G E N E R A L D ESCRIPTIO N • • • The A m 9016 is a high speed, 16 k-bit, dynam ic, read/w rite random access m em ory. It is organized as 16,384 words by 1 b it per w ord and is packaged in a standard 16-pin DIP. The


    OCR Scan     		PDF MK4116 462mW 150ns 320ns 16-pin, MIL-STD-883 Am9016 16k-bit, AM9016EPC AM9016DPC AM9016FPC AM9016EDC AM9016CPC AM9016DDC AM9016CDC AM9016FDC am9016e

    transistor 716-analog

    Abstract: 500MSPS AD9006
    Text: □ ANALOG DEVICES FEATURES 500MSPS Encode Rate Very Low Input Capacitance: 8pF 30dB SNR @ 200MHz Analog Input MIL-STD-883 Available Bipolar Input Range ± 1 V Demultiplexed Outputs (AD9016) MIL-STD-883-Compliant Versions Available High Speed 6-Bit A/D Converters


    OCR Scan     		PDF AD9006/AD9016 500MSPS 200MHz MIL-STD-883 AD9016) MIL-STD-883-Compliant AD9006 AD9016 500MSPS. transistor 716-analog