9016 NPN Search Results

9016 NPN Result Highlights (5)

Part	Manufacturer	Description
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
CA3083Z-G	Rochester Electronics LLC	CA3083 - General Purpose High Current NPN Transistor Array
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

9016 NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
P-Channel IGBT Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .	Original		PDF
9016 transistor Abstract: F 9016 transistor npn 9016 transistor 9016 97 G transistor ic st 9016 hFE is transistor 9016 npn transistor 9016 npn Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original		PDF
9016 transistor Abstract: F 9016 transistor 9016 st 9016 transistor 9016 npn npn 9016 transistor Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original		PDF
9016 transistor Abstract: F 9016 transistor npn 9016 transistor Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original		PDF
npn 9016 transistor Abstract: 9016 transistor transistor 9016 npn st 9016 F 9016 transistor 9016 transistor 9016 H 9016 9016 NPN transistor st9016 Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original		PDF
transistor mje340 Abstract: MJE340 b c e MJE340 Text: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E 2.25 Typical	Original	MJE340 O-126 transistor mje340 MJE340 b c e MJE340	PDF
BU208D Abstract: NPN Transistor 1500V 20a H 9645 Text: BU208D Horizontal Deflection Transistor NPN Silicon Horizontal Defection Transistors with integrated damper diodes are specifically designed for use in large screen colour deflection circuits. Features: • VCES = 1500V VCEO sus = 700V (Minimum). • Low Saturation	Original	BU208D BU208D NPN Transistor 1500V 20a H 9645	PDF
equivalent transistor 2n3704 Abstract: T2N3705 2N3704 2N3705 T2N3704 Text: T2N3704, T2N3705 Series Bipolar Transistors Description: NPN Silicon Planar Epitaxial Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H 5° 1.14 1.40 1.53 K 12.70 - L 1.982 2.082	Original	T2N3704, T2N3705 equivalent transistor 2n3704 2N3704 2N3705 T2N3704	PDF
MJE340 Abstract: MJE340 datasheet MJE340 b c e Text: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical	Original	MJE340 O-126 MJE340 MJE340 datasheet MJE340 b c e	PDF
MPSA14 Abstract: transistor 7333 Text: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H K 5° 1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration 1. Collector 2. Base 3. Emitter Page 1	Original	MPSA14 MPSA14 transistor 7333	PDF
7333 A Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333 Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70	Original	MPSA06 7333 A transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333	PDF
7333 A Abstract: Power Transistors TO-126 Case farnell ic 901 BD437 Text: BD437 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C	Original	BD437 O-126 O-126 7333 A Power Transistors TO-126 Case farnell ic 901 BD437	PDF
BUX47 Abstract: 7333 A Text: BUX47 Power Transistor NPN Silicon Power Transistors are designed for use in high-speed switching and linear amplifier applications. Features: • High Current Capabilities. • Fast Turn-On and Turn Off. • Power Dissipation -PD = 125W at TC = 25°C. • DC Current Gain	Original	BUX47 BUX47 7333 A	PDF
TTIP112 Abstract: TTIP117 Text: TTIP112, TTIP117 Darlington Transistors Features: • NPN and PNP Plastic Power Transistors. • General Purpose Darlington Amplifier and Low Speed Switching Applications. TO-220 Plastic Package Dimensions Minimum Maximum A 14.42 16.51 B 9.63 10.67 C 3.56	Original	TTIP112, TTIP117 O-220 TTIP112 TTIP112 TTIP117	PDF

2N3704 Abstract: equivalent transistor 2n3704 2N3704 datasheet farnell Text: 2N3704 Bipolar Transistors Description: NPN Silicon Planar Epitaxial Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.40 1.14 H 1.53 K 12.70 - L 1.982 2.082 Dimensions : Millimetres	Original	2N3704 2N3704 equivalent transistor 2n3704 2N3704 datasheet farnell	PDF
2N3705 Abstract: "Bipolar Transistors" farnell Text: 2N3705 Bipolar Transistors Description: NPN Silicon Planar Epitaxial Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H 5° 1.14 1.40 1.53 K 12.70 - L 1.982 2.082 Dimensions : Millimetres	Original	2N3705 2N3705 "Bipolar Transistors" farnell	PDF
farnell Abstract: Darlington transistor to 92 Darlington transistor MPSA14 Text: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.40 1.14 H K 1.53 12.70 - Dimensions : Millimetres Pin Configuration: 1. Collector 2. Base 3. Emitter Page 1	Original	MPSA14 farnell Darlington transistor to 92 Darlington transistor MPSA14	PDF
2N3704 Abstract: 2N3705 transistor 2n3704 equivalent transistor 2n3704 2N3704 transistor Text: 2N3704 & 2N3705 General Purpose Transistor Description: • NPN Silicon Planar Epitaxial Transistors. 2N3704 NPN 2N3705 NPN TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H 5° 1.14 1.40 1.53	Original	2N3704 2N3705 2N3704 2N3705 transistor 2n3704 equivalent transistor 2n3704 2N3704 transistor	PDF
JE9016 Abstract: A78G Text: NPN SILICON TRANSISTOR ELECTRON DEVICE JE9016 DESCR IPTIO N The JE 9016 is designed fo r use in A M converter and FM PAC K A G E D IM E N S IO N S in m illim e ters lin ch es 5.2 MAX. RF am p lifie r o f low noise. FE A TU R E S • High to ta l power dissipation. Py : 400 mW)	OCR Scan	JE9016 JE9016 A78G	PDF
transistor c 9018 Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor Text: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF	OCR Scan	T0-92B 500fi 10kfi transistor c 9018 Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor	PDF
CP1005 Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014 Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I	OCR Scan	KM90II KM90I5 KM901I/8 KM90II/8 KM90I4 KM9015 KM90I: KM90i to-92a CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014	PDF
9014 ch Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor Text: »v'.-T i V.y*, 7 “ •1 v í- j m £?\| P Im I I I m . C-iS.fi w - f , , :;1 \| AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011	OCR Scan	O-92A 9014 ch transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor	PDF
9011 9012 9013 9014 9018 Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015 Text: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, i Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER	OCR Scan	CL9000 T0-92B 10kfi 9011 9012 9013 9014 9018 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015	PDF
TBC560 Abstract: No abstract text available Text: > OVERSEA STANDARD < Typo No. Application NPN PNP . hFE v CE0 V >C PC (mA) (mW) VcE(sal)MAX. VCE (V) •c >c (mA) (mA) f-\|-TYP (MIN.) ■b (mA) (MHZ) NF MAX. Vc e 'c (V) (mA) Pin Vc e ■c f Rg (dB) (V) (mA) (Hz) (K n ) —3 O to I ! I,CD Configuration ¡.<0	OCR Scan	TBC337 TBC327 TBC338 TBC328 TBC546 S1838 S1839 S1840 BF422 BF423 TBC560	PDF

9016 NPN Search Results

9016 NPN Result Highlights (5)

9016 NPN Datasheets Context Search

P-Channel IGBT

9016 transistor

9016 transistor

9016 transistor

npn 9016 transistor

transistor mje340

BU208D

equivalent transistor 2n3704

MJE340

MPSA14

7333 A

7333 A

BUX47

TTIP112

2N3704

2N3705

farnell

2N3704

JE9016

transistor c 9018

CP1005

9014 ch

9011 9012 9013 9014 9018

TBC560