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    900V NPN TRANSISTOR Search Results

    900V NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    900V NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4631LS

    Abstract: ITR07322 ITR07323 ITR07324 ITR07325 ITR07327
    Text: Ordering number : ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=5.0pF).


    Original     		PDF ENN3700B 2SC4631LS 300mA 2079D 2SC4631LS] O-220FI 2SC4631LS ITR07322 ITR07323 ITR07324 ITR07325 ITR07327

    2SC4631LS

    Abstract: ITR07322 ITR07323 ITR07324 ITR07325 ITR07327 AX750
    Text: Ordering number : ENN3700B 2SC4631LS NPN Triple Diffused Planar Silicon Transistor 2SC4631LS 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=5.0pF).


    Original     		PDF ENN3700B 2SC4631LS 300mA 2079D 2SC4631LS] O-220FI 2SC4631LS ITR07322 ITR07323 ITR07324 ITR07325 ITR07327 AX750

    2SC4630LS

    Abstract: ITR07313 ITR07314 ITR07315 ITR07316 ITR07317 ITR07318
    Text: Ordering number : ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features • • • High breakdown voltage VCEO min=900V . Small Cob(typical Cob=2.8pF).


    Original     		PDF ENN3699B 2SC4630LS 100mA 2079D 2SC4630LS] O-220FI 2SC4630LS ITR07313 ITR07314 ITR07315 ITR07316 ITR07317 ITR07318

    NTE2325

    Abstract: npn 10a 800v
    Text: NTE2325 Silicon NPN Transistor High Voltage Switch Features: D High Reverse Voltage: VCBO = 900V Max D High Speed Switching: tf = 0.7µs (Max) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V


    Original     		PDF NTE2325 300mA 200mA 400mA, 800mA, NTE2325 npn 10a 800v

    11599HA

    Abstract: 2SC4631
    Text: Ordering number:EN3700A NPN Triple Diffused Planar Silicon Transistor 2SC4631 900V/300mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=900V . · Small Cob (typical Cob=5.0pF). · Full-isolation package.


    Original     		PDF EN3700A 2SC4631 00V/300mA 2079B 2SC4631] O-220FI 11599HA 2SC4631

    2SC4030

    Abstract: No abstract text available
    Text: Ordering number:EN2477B NPN Triple Diffused Planar Silicon Transistor 2SC4030 900V/50mA Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=900V . · Small Output Capacitance (Cob typ=2.0pF). · Wide ASO (adoption of MBIT process).


    Original     		PDF EN2477B 2SC4030 00V/50mA 2049C 2SC4030] O-220MF 2SC4030

    2SC4030

    Abstract: ITR06266 ITR06267 ITR06268 ITR06269 ITR06270
    Text: Ordering number:ENN2477B NPN Triple Diffused Planar Silicon Transistor 2SC4030 900V/50mA Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=900V . · Small Output Capacitance (Cob typ=2.0pF). · Wide ASO (adoption of MBIT process).


    Original     		PDF ENN2477B 2SC4030 00V/50mA 2049C 2SC4030] O-220MF 2SC4030 ITR06266 ITR06267 ITR06268 ITR06269 ITR06270

    2SC4031

    Abstract: ITR06277 ITR06278 ITR06279 ITR06280 ITR06281
    Text: Ordering number:ENN2478B NPN Triple Diffused Planar Silicon Transistor 2SC4031 900V/20mA Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=900V . · Small Output Capacitance (Cob typ=1.6pF). · Wide ASO (adoption of MBIT process).


    Original     		PDF ENN2478B 2SC4031 00V/20mA 2049C 2SC4031] O-220MF 2SC4031 ITR06277 ITR06278 ITR06279 ITR06280 ITR06281

    24782

    Abstract: 2SC4031
    Text: Ordering number:EN2478B NPN Triple Diffused Planar Silicon Transistor 2SC4031 900V/20mA Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=900V . · Small Output Capacitance (Cob typ=1.6pF). · Wide ASO (adoption of MBIT process).


    Original     		PDF EN2478B 2SC4031 00V/20mA 2049C 2SC4031] O-220MF 24782 2SC4031

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN2478B NPN Triple Diffused Planar Silicon Transistor 2SC4031 900V/20mA Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=900V . · Small Output Capacitance (Cob typ=1.6pF). · Wide ASO (adoption of MBIT process).


    Original     		PDF ENN2478B 2SC4031 00V/20mA 2049C 2SC4031] O-220MF

    NTE2325

    Abstract: No abstract text available
    Text: NTE2325 Silicon NPN Transistor High Voltage Switch Features: D High Reverse Voltage: VCBO = 900V Max D High Speed Switching: tf = 0.7µs (Max) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V


    Original     		PDF NTE2325 400mA, 800mA, 200mA 300mA 526-NTE2325 NTE2325

    2SC4630

    Abstract: 11599HA TA-0465 en369
    Text: Ordering number:EN3699A NPN Triple Diffused Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=900V . · Small Cob (typical Cob=2.8pF). · Full isolation package.


    Original     		PDF EN3699A 2SC4630 00V/100mA 2079B 2SC4630] O-220FI 2SC4630 11599HA TA-0465 en369

    2SC3866

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2SC3866 Silicon NPN Power Transistor DESCRIPTION ・High Breakdown Voltage: V BR CBO= 900V(Min) ・High Switching Speed ・High Reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters


    Original     		PDF 2SC3866 2SC3866

    2SC3156

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3156 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications


    Original     		PDF 2SC3156 2SC3156

    2SC3149

    Abstract: NPN 800V
    Text: Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage: VCBO=900V Min ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・800V/1.5A switching regulator applications


    Original     		PDF 2SC3149 O-220C 00V/1 10MHz 2SC3149 NPN 800V

    2SC3149

    Abstract: npn transistors 400V 0.1A 400C
    Text: SavantIC Semiconductor Product Specification 2SC3149 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage: VCBO=900V Min ·Fast switching speed. ·Wide ASO (Safe Operating Area) APPLICATIONS ·800V/1.5A switching regulator applications


    Original     		PDF 2SC3149 O-220C 00V/1 10MHz 2SC3149 npn transistors 400V 0.1A 400C

    2SC3676

    Abstract: ITR05795 ITR05797 ITR05798 VITR05796
    Text: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		PDF ENN1801E 2SC3676 00V/300mA 2010C 2SC3676] O-220AB 2SC3676 ITR05795 ITR05797 ITR05798 VITR05796

    2SC3151

    Abstract: 400E
    Text: SavantIC Semiconductor Product Specification 2SC3151 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 900V ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·800V/1.5A Switching Regulator Applications


    Original     		PDF 2SC3151 00V/1 2SC3151 400E

    2SC3156

    Abstract: PW3300 npn transistors 400V 3A
    Text: SavantIC Semiconductor Product Specification 2SC3156 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications


    Original     		PDF 2SC3156 2SC3156 PW3300 npn transistors 400V 3A

    2SC4020

    Abstract: 2SC4020 equivalent 357B
    Text: SavantIC Semiconductor Product Specification 2SC4020 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage : VCBO=900V Min ·Wide area of safe operation APPLICATIONS ·For switching regulator and general purpose applications


    Original     		PDF 2SC4020 O-220C 2SC4020 2SC4020 equivalent 357B

    2sc3150

    Abstract: 200D
    Text: SavantIC Semiconductor Product Specification 2SC3150 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage : VCBO=900V Min ·Fast switching speed. ·Wide ASO (Safe Operating Area) APPLICATIONS ·800V/3A switching regulator applications


    Original     		PDF 2SC3150 O-220C 00V/3A 10MHz 2sc3150 200D

    2sc3676

    Abstract: No abstract text available
    Text: Ordering number:ENN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions • High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications.


    Original     		PDF ENN1801E 2SC3676 00V/300mA 2010C 2SC3676] 2sc3676

    2sc3153

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC3153 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage VCBO 900V ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·800V/6A switching regulator applications


    Original     		PDF 2SC3153 00V/6A 2sc3153

    2079B

    Abstract: AX-7506 T0-220FI
    Text: Ordering number: EN3700* 2SC4631 NO.3700A NPN Triple Diffused Planar Silicon Transistor SA \ YO 900V/300mA High-Voltage Amp, High-Voltage Switching Applications i Features • High breakdown voltage Vqeo min=900V . • Small Cob (typical Cob= 5.0pF). • Full-isolation package.


    OCR Scan     		PDF EN3700* 00V/300mA 2SC4631 Ib--12mA 2079B T0-220FI 80296YK TA-0465, AX-7506 005DSHS 2079B