ADC-228AMC
Abstract: ADC-228AMM
Text: ® ADC-228A 8-Bit, 20MHz, Complete Flash A/D Converter INNOVATION and EXCELLENCE PRELIMINARY PRODUCT DATA FEATURES • • • • • • • 8-Bit flash A/D converter 20MHz sampling rate Complete support circuitry Low power, 900mW Sample-hold not required
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ADC-228A
20MHz,
20MHz
900mW
MIL-STD-883
ADC-228A
24-pin
ADC-228AMC
ADC-228AMM
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ee8 transformer
Abstract: EE8.3 ee8 power transformer
Text: DC/DC Converter Transformer Type Dimensions: UNIT : mm EPC6.2 8.0 Max. Recommand Pad 4.0 Max. 2.0 1.2 4 3 Specifications Max. Operation Freq. : 300KHz Max. Operation Power : 300mW @100KHz 900mW @300KHz 6.5 Max. 1 6 1.5 4.0 0.5x0.1 EE6.3 5.2 Max. 8.8 Max. 2.54
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300KHz
300mW
100KHz
900mW
ee8 transformer
EE8.3
ee8 power transformer
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • Capable of 900mWatts of Power Dissipation. Collector-current 0.8A Collector-base Voltage 600V
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MJE13002B
900mWatts
-55OC
100uAdc,
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10ghz modulator driver
Abstract: 10ghz optical modulator driver cpap ADN2849 ADN2849ACP ADN2849ACP-RL ADN2849ACP-RL7 STM-64 EAM Laser Driver AD138
Text: 10.7 Gbps Electro-Absorption Modulator Driver ADN2849 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Data Rates up to 10.709Gb/s Typical Rise/Fall Time 27ps Power Dissipation 900mW at 2V swing, 1V offset Programmable Modulation Voltage up to 3V
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ADN2849
709Gb/s
900mW
-10dB
10GHz
ADN2849
10ghz modulator driver
10ghz optical modulator driver
cpap
ADN2849ACP
ADN2849ACP-RL
ADN2849ACP-RL7
STM-64
EAM Laser Driver
AD138
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ETS300
Abstract: infineon mtbf
Text: NT1+/INF2 Power Management Module for ISDN NT1+ Rev. 01 Type Vi 180<VI1<264Vrms NT1+/INF2 40<Vi2<120 Vdc Vo Po +/-40V 4.5W +5V 720mW -22V 900mW -50V 100mW -130V 700mW PRODUCT VIEW FEATURES COMBINED AC+DC CONVERTER FOR ISDN NT1+ APPLICATION Uo INTERFACE DC AND MAIN (AC) INPUTS TO ENABLE NPM (Normal Power
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/-40V
720mW
900mW
100mW
-130V
264Vrms
700mW
ETS300
infineon mtbf
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ST PS20 datasheet
Abstract: ETS300 PS20
Text: NT1+/UR2 Power Management Module for ISDN NT1+ Rev. 03 Type Vi Vo Po +/-40V 4.5W 180<VI1<264Vrms +5V 720mW -21V 900mW 40<Vi2<120 Vdc -50V 100mW -150V 700mW NT1+/UR2 PRODUCT VIEW FEATURES COMBINED AC+DC CONVERTER FOR ISDN NT1+ APPLICATION Uo INTERFACE DC AND MAIN (AC) INPUTS TO ENABLE NPM (Normal Power
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/-40V
264Vrms
720mW
900mW
100mW
-150V
700mW
ST PS20 datasheet
ETS300
PS20
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ETS300
Abstract: No abstract text available
Text: NT1+/PH2 Power Management Module for ISDN NT1+ Rev. 01 Type Vi Vo Po +/-40V 4.5W 180<VI1<264Vrms +5V 720mW -21V 900mW 40<Vi2<120 Vdc -50V 100mW -135V 700mW NT1+/PH2 PRODUCT VIEW FEATURES COMBINED AC+DC CONVERTER FOR ISDN NT1+ APPLICATION Uo INTERFACE DC AND MAIN (AC) INPUTS TO ENABLE NPM (Normal Power
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/-40V
264Vrms
720mW
900mW
100mW
-135V
700mW
ETS300
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Centellax
Abstract: electroabsorption modulator Integrated Modulator and Driver Module ST-M25 GPPO 36PS
Text: CENTELLAX OA4SMM2 Datasheet 43Gb/s Broadband 3.3V Electroabsorption Modulator Driver Amplifier Product Highlights • 3.3Vp-p output swing • 0.5ps added RMS jitter Pr • 6ps rise / fall time • 21dB gain to 45GHz • 16dBm saturated output power • 900mW power dissipation
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43Gb/s
45GHz
900mW
16dBm
45GHz.
OPT002)
smd-00026
Centellax
electroabsorption modulator
Integrated Modulator and Driver Module
ST-M25
GPPO
36PS
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ETS300
Abstract: No abstract text available
Text: GS-NT1+/DF3 POWER MANAGEMENT MODULE FOR ISDN NT1+ REV. 01 Vi Type NT1+/DF3 180<Vi1<264 V 40<Vi2<120 Vdc Vo Io ± 40V 4.5W ± 5V 720mW - 21V 900mW - 50V 100mW - 135V 700mW FEATURE • COMBINED AC+DC CONVERTER FOR ISDN NT1+ APPLICATION ■ Uo INTERFACE DC AND MAIN (AC) INPUTS
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720mW
900mW
100mW
700mW
ETS300
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ETS300
Abstract: NT1 RELAY PS20 isdn-nt1
Text: NT1+/UR2 Power Management Module for ISDN NT1+ Rev. 03 Type Vi Vo PRODUCT VIEW Po +/-40V 4.5W 180<VI1<264Vrms +5V 720mW -21V 900mW 40<Vi2<120 Vdc -50V 100mW -150V 700mW NT1+/UR2 s t c u d o r FEATURES COMBINED AC+DC CONVERTER FOR ISDN NT1+ APPLICATION
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/-40V
264Vrms
720mW
900mW
100mW
-150V
700mW
ETS300
NT1 RELAY
PS20
isdn-nt1
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infineon mtbf
Abstract: ETS300 isdn-nt1
Text: NT1+/INF2 Power Management Module for ISDN NT1+ Rev. 01 Type Vi Vo Po +/-40V 4.5W 180<VI1<264Vrms +5V 720mW -22V 900mW 40<Vi2<120 Vdc -50V 100mW -130V 700mW NT1+/INF2 PRODUCT VIEW FEATURES COMBINED AC+DC CONVERTER FOR ISDN NT1+ APPLICATION Uo INTERFACE DC AND MAIN (AC) INPUTS TO ENABLE NPM (Normal Power
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/-40V
264Vrms
720mW
900mW
100mW
-130V
700mW
infineon mtbf
ETS300
isdn-nt1
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mje13002b
Abstract: micro transistor
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Capable of 900mWatts of Power Dissipation. Collector-current 0.8A Collector-base Voltage 600V
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900mWatts
-55OC
MJE13002B
100uAdc,
mje13002b
micro transistor
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED High Power Top LED SMBB850D-1100 Lead Pb Free Product – RoHS Compliant PRELIMINARY SMBB850D-1100 High Power Top LED SMBB850D-1100 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package. These devices are available to be operated and 900mW/sr at IFP=3A.
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SMBB850D-1100
SMBB850D-1100
900mW/sr
1000um
1000um
850nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED High Power Top LED SMBB850D-1100 Lead Pb Free Product – RoHS Compliant PRELIMINARY SMBB850D-1100 High Power Top LED SMBB850D-1100 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package. These devices are available to be operated and 900mW/sr at IFP=3A.
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SMBB850D-1100
SMBB850D-1100
900mW/sr
1000um
1000um
850nm
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • Capable of 900mWatts of Power Dissipation. Collector-current 0.8A Collector-base Voltage 600V
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MJE13002B
900mWatts
-55OC
100uAdc,
100uA
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rl66
Abstract: PQ1M185M2SPQ PQ1M255M2SPQ PQ1M335M2SPQ PQ1M155M2SPQ
Text: PQ1Mxx5M2SPQ Series PQ1Mxx5M2SPQ Series Compact Surface Mount Type Low Power-Loss Voltage Regulators • Outline Dimensions Features Unit : mm 1.Compact surface mount package (4.5x4.3×1.5mm) 2.Output current : MAX.500mA 3.Power dissipation : MAX.900mW
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500mA
900mW
500mA)
PQ1M335M2SPQ)
OP06037
rl66
PQ1M185M2SPQ
PQ1M255M2SPQ
PQ1M335M2SPQ
PQ1M155M2SPQ
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Termistor
Abstract: 2 Wavelength Laser Diode termistor 104 1000mW laser 1w infrared led chip thermistor medical device high power laser laser diode 780 nm SLD304XT SLD304XT-1
Text: SLD304XT 1000mW High Power Laser Diode Description The SLD304XT allows independent thermal and electric design. This laser diode has a built-in TE Thermo Electric cooler. Equivalent Circuit Features • High power Recommended optical power output Po = 900mW
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SLD304XT
1000mW
SLD304XT
900mW
65MAX
M-273
LO-10)
Termistor
2 Wavelength Laser Diode
termistor 104
1000mW laser
1w infrared led
chip thermistor medical device
high power laser
laser diode 780 nm
SLD304XT-1
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED High Power Top LED SMB850DR-1100 Lead Pb Free Product – RoHS Compliant SMB850DR-1100 High Power Top LED SMB850DR-1100 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm package. These devices are available to be operated and 900mW/sr at IFP=3A.
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SMB850DR-1100
SMB850DR-1100
900mW/sr
1000um
1000um
850nm
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2SA1680
Abstract: 2SC4408 transistor 2SA1680
Text: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)
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2SC4408
2SA1680
900mW
500ns
75MAX.
2SC4408
transistor 2SA1680
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100A484
Abstract: 100484 Z623 I60S4 10A484
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels
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IDT10484,
IDT10A484
IDT100484,
IDT100A484
IDT101484,
IDT101A484
4096-words
900mW
MIL-STD-883,
IDT10484
100A484
100484
Z623
I60S4
10A484
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AD1380
Abstract: AD1380JD AD1380KD ADI380 Sheingold 141kHz
Text: Low Cost 16-Bit Sampling ADC AD1380 A N A LO G D E V IC E S FEATURES Complete Sampling 16-Bit ADC With Reference and Clock 50kHz Throughput ±1/2LSB Nonlinearity Low Noise SHA: 300|¿V p-p 32-Pin Hermetic DIP Parallel and Serial Outputs Low Power: 900mW FU NC TIO N AL BLOCK DIAGRAM
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16-Bit
50kHz
32-Pin
900mW
AD1380
AD138>
8281Hz)
AD1380JD
AD1380KD
ADI380
Sheingold
141kHz
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A1680
Abstract: transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680
Text: TOSHIBA 2SA1680 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. Unit in mm 5.1 MAX • Low Collector Saturation Voltage : v CE(sat)= - 0 .5 V (Max.) (1^ = -1 A ) • High Collector Power Dissipation : Pg = 900mW (Ta = 25°C)
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2SA1680
900mW
300ns
2SC4408.
961001EAA2'
A1680
transistor A1680
2sa1680 TRANSISTOR
2SA1680
2SC4408
transistor 2SA1680
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 M A X . POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : V qe (sat) = 0*5V (Max.) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)
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2SC4408
900mW
500ns
2SA1680
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2SA1680
Abstract: 2SC4408
Text: TOSHIBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm PO W ER AM PLIFIER APPLICATIONS 5.1 M AX. PO W ER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : V ç;e (sat) = 0.5V (Max.) High Collector Power Dissipation : Pç; = 900mW (Ta = 25°C)
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2SC4408
900mW
500ns
2SA1680
75MAX
961001EAA2'
2SC4408
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