g2ns
Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Text: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold
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NE72118
NE72118)
g2ns
C10535E
NE72118
NE72118-T1
NE72118-T2
NEC k 2134
812 421
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Untitled
Abstract: No abstract text available
Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band
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FLK107XV
FLK107XV
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FET 913
Abstract: FLK107XV
Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band
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FLK107XV
FLK107XV
FET 913
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C10535E
Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION
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NE713
NE71300-N
NE71300-M
NE71300-L
NE71383B
NE71383B]
C10535E
NE713
NE71300
NE71300-L
NE71300-M
NE71300-N
NE71383B
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TRANSISTOR D434
Abstract: d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313
Text: PRELIMINARY DATA SHEET GaAs MES FET NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 1.4 dB TYP. at f = 12 GHz x High associated gain Ga = 10 dB TYP. at f = 12 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
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NE674
NE67400
NE67483B
NE67483B]
NE67400]
TRANSISTOR D434
d1859 transistor
D1585
NE674
d1859
D588 transistor
d998 transistor
transistor D467
d638 transistor
transistor D313
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uc 3808
Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 k 2134 nec od6000
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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FLK107XV
Abstract: No abstract text available
Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band
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FLK107XV
FLK107XV
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: ηadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band
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FLK107XV
FLK107XV
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Untitled
Abstract: No abstract text available
Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 6.5dB(Typ.) High PAE: hadd = 31%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION The FLK107XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band
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FLK107XV
FLK107XV
FCSI0598M200
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AIUR-02H
Abstract: AIRD-03-821K AIRD-02-2R2K AIUR-02L marking 333j HP 4343B AIUR-03-2R2K AIRD-01-471K
Text: THROUGH-HOLE RADIAL SHIELDED RF CHOKES AISR- 01 FEATURES: OPTIONS: COMMON APPLICATIONS: • • • • • • • Bulk Packaging is Standard • Tolerance: 5% is Standard • • • • • Wire-wound Construction Ferrite Shield Excellent Heat Resistance
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AIMT-01-100-2
Abstract: AIMT-01-100-2.5 AIMT-01-43 AIMT-01-25
Text: VERTICAL / HORIZONTAL TOROIDAL COILS AIMT-01 FEATURES: OPTIONS: COMMON APPLICATIONS: • • • • • • • Bulk Packaging is Standard • Tolerance: 20% is Standard Tighter Tolerances Available • Mounting: V ertical is Standard, (H)orizontal Available
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AIMT-01
AIMT-01-100-2
AIMT-01-100-2.5
AIMT-01-43
AIMT-01-25
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Untitled
Abstract: No abstract text available
Text: Agilent N5435A Infiniium Server-Based License for Infiniium Oscilloscopes Data Sheet The Agilent N5435A Infiniium serverbased license allows you to move your scope application license from one Infiniium oscilloscope to another, using a license server. Just check out the
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N5435A
N8900A
soft100
5989-6937EN
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C10535E
Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B NE71383
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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5T6184
Abstract: P009 RAYCO ELECTRONICS RAYCO ELECTRONICS MANUFACTURING
Text: Power Inductors 1. Low profile, transfer mold surface-mount package 2. Four sizes; leaded and leadless configurations 3. Ideal for automatics insertion 4. Weight of 0.5 to 5 grams PHOTO 5. Built to meet MIL-PRF-27 specifications., Grade 5, Class S 6. Operating temperature range: -55? to +130? .
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MIL-PRF-27
5T6184-XXX
5T6184
P009
RAYCO ELECTRONICS
RAYCO ELECTRONICS MANUFACTURING
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FLX107MH-12
Abstract: No abstract text available
Text: FLX107MH-12 X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 30.0dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general
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FLX107MH-12
FLX107MH-12
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20PM4
Abstract: NE985100 NE985200 NE985400
Text: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)
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h427414
00015b?
NE985
NE985100
NE985100
NE985200
NE985400
NE985200
NE985400
20PM4
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sl2 357
Abstract: No abstract text available
Text: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold
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NE72118
NE72118-T1
NE72118-T2
WS60-00-1
IR30-00-2
sl2 357
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sem 2105 16 pin
Abstract: sem 2105
Text: DATA SH E E T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz Gate Length: Lg = 0.8 jum recessed gate Gate Width: Wg = 330 fjm 4 pins super mini mold Tape & reel packaging only available
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NE72118
NE72118-T1
NE72118-T2
NE72118)
sem 2105 16 pin
sem 2105
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40106B
Abstract: 4093B equivalent 4041UB 4048B 4069UB 9204 4099B 9201 9306
Text: RADIATION HARDENED PRODUCTS Radiation Hardened versions of HCC 4000 series types are offered by SGS-THOMSON for special applications in Space, Biomedical and Military fields. These devices are supplied in accordance to the relevant Hi-Rel processing and screening specifica
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SCC9000,
4000B
4001B
4002B
4007UB
4008B
40101B
40103B
40104B
40105B
40106B
4093B equivalent
4041UB
4048B
4069UB
9204
4099B
9201
9306
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Untitled
Abstract: No abstract text available
Text: TYPE TCG Computer Grade Aluminum Electrolytic Capacitors FEATURES: • High Voltage • High Capacitance • High Ripple Currents The TCG capacitor manufactured by Aerovox is a tubular version of the larger screw mount CGS computer grade capacitor. The excellent electrical stability and long operating life
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TCG120M400J1C3P
TCG330M400J1L3P
TCG470M400L1L3P
TCG680M400L2C3P
TCG101M400N2C3P
TCG121M400N2L3P
TCG151M400N3C3P
TCG181M400N3L3P
TCG8R2M450J1C3P
TCG180M450J1L3P
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NE674
Abstract: NE67483 NE67483B
Text: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m
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NE674
NE67400
NE67483B
NE67483B]
NE67400]
NE674
NE67483
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NEC D 809 F
Abstract: NEC D 809 L transistor NEC D 986 E7138
Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm
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NE713
E71383B
NE71383B]
NE71300]
NEC D 809 F
NEC D 809 L
transistor NEC D 986
E7138
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FLK107XV
Abstract: tc 5082
Text: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability DESCRIPTION The FLK107XV chip is a pow er G aAs FET that is designed for general purpose applications in the Ku-Band
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FLK107XV
FLK107XV
FCSI0598M200
tc 5082
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NEC D 809 F
Abstract: NEC D 809 71383B NEC D 809 k
Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm
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NE713
NE71300-N
NE71300-M
NE71300-L
NE71383B
NE71383B]
NE71300]
NEC D 809 F
NEC D 809
71383B
NEC D 809 k
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