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    900 NM LED Search Results

    900 NM LED Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MM74C911N Rochester Electronics LLC 74C911 - LED Driver, 8-Segment, CMOS, PDIP28 Visit Rochester Electronics LLC Buy
    GA3502-BLD Coilcraft Inc Transformer, for Maxim LED driver, SMT, RoHS Visit Coilcraft Inc Buy
    ZSLS7025ZI1R Renesas Electronics Corporation Boost LED Driver Visit Renesas Electronics Corporation
    ISL78100ARZ-T Renesas Electronics Corporation High Power LED Driver Visit Renesas Electronics Corporation
    ISL78100ARZ Renesas Electronics Corporation High Power LED Driver Visit Renesas Electronics Corporation

    900 NM LED Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    B5B-900-8

    Abstract: No abstract text available
    Text: B5B-900-8 TECHNICAL DATA LED, 5 mm GaAlAs B5B-900-8 is a GaAlAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a band of infrared light with a peak at 900 nm. Specifications • • • • Structure: GaAlAs Peak Wavelength: typ. 900 nm


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    B5B-900-8 B5B-900-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: 深紫外光源 L12848-305 ●High output 約8倍 (LED比) UV CL L1 28 48 -3 05 ●Compact 原寸大 ピ ー ク 波 長 LE 30 5 D nm 3 10 nm タ イ プ 特長 発光波長分布 TLSZB0110JB 900 800 700 600 相対光出力 (%) ●高出力: LED(310 nm)に対して約8倍


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    L12848-305 TLSZB0110JB TLSZ1024J01 PDF

    1A226

    Abstract: IR LED MITEL
    Text: PRODUCT INFORMATION 900 nm 1A226 High-Performance LED The wavelength for this LED is 900nm —ideal for unique sensor applictions. The double-lens optical system achieves optimum coupling of power into the fiber. It’s packaged in a hermetically sealed can to survive harsh


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    1A226 900nm 5/125m 1A226 IR LED MITEL PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 900 nm Type PDI-V490 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE + 0.005 [0.13] 0.080 [2.03]


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    PDI-V490 100-PDI-V490 PDF

    metal detector sensor

    Abstract: photovoltaic sensor
    Text: PHOTONIC Silicon Photodiode, Filter Combination Photovoltaic center wavelength 900 nm Type PDI-V490 DETECTORS INC. EPOXY COVERING EYELET PACKAGE DIMENSIONS INCH [mm] WIRE BONDS EPOXY MARKING INK (WAVE LENGTH NO.) ACTIVE AREA SURFACE +- 0.005 [0.13] 0.080 [2.03]


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    PDI-V490 metal detector sensor photovoltaic sensor PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTOSENSOR MODULE WITH THERMOELECTRIC COOLER H7844 Improved detection limit for near infrared to 900 nm FEATURES ●Low dark current (1/50 of that at room temperature) ●Fast cooling (3 minutes) by thermoelectric cooler directly coupled to the photocathode


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    H7844 SE-164 TPMO1032E04 PDF

    "Thermoelectric Cooler"

    Abstract: JST slp-02v SLR-02VF SP-315-60D-60H H7844 C10410 equivalent HR10A-7P-6S
    Text: PHOTOSENSOR MODULE WITH THERMOELECTRIC COOLER H7844 New product of near infrared to 900 nm detection FEATURES ●A newly developed high sensitivity multialkali side-on photomultiplier tube ●Fast cooling (3 minutes) by thermoelectric cooler directly coupled to the photocathode


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    H7844 SE-171-41 TPMO1032E03 "Thermoelectric Cooler" JST slp-02v SLR-02VF SP-315-60D-60H H7844 C10410 equivalent HR10A-7P-6S PDF

    Untitled

    Abstract: No abstract text available
    Text: Dialight 3mm Prism CBI® Infrared Detector True Surface Mount LED 4.3 [.170] Part No.* 591-7602-1xx COLLECTOR ID 6.1 [.240] 2.1 [.082] 2.8 [.112] 591-7602-1xx Configuration 900 nm Phototransistor 2.8 [.112] 5.0 [.198] Applications 3.2 [.125] MAX .1 [.004] MAX. BELOW


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    591-7602-1xx PDF

    Untitled

    Abstract: No abstract text available
    Text: Flangeless Round LEDs TCI Part No. Radial Leaded LED Chip Emitted Color Matrial λD nm Lens Color Iv (mcd) VF(v)@20mA Viewing Angle Typ. Max. 2θ1/2 Min. Typ. at IF= mA 2225 920 525 1135 1135 1135 1285 810 1135 1135 810 1135 1135 1800 3500 1300 900 1700 1900


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    l943

    Abstract: No abstract text available
    Text: SOLID STATE D I V I S I O N Selection Guide Feb. 2012 LED Wide variations of Light Emitting Diodes to match various applications LIGHT EMITTING DIODES LED HAMAMATSU offers a broad lineup of light emitters such as high-power, near infrared LED. HAMAMATSU LEDs


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    KLED0002E06 l943 PDF

    Untitled

    Abstract: No abstract text available
    Text: W WEITRON WT-T3A8FCH 5050 TOP LED Ceramics- Full Color Product Specifications_ Specification Iv Material Quantity Red: 450-715 mcd Green: 900-2250 mcd Blue: 220-450 mcd @ 20mA/ Ta= 25O C Tolerance±10% Red: 615-630 nm lambda Ao Green: 520-535 nm


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    81-1A 220x240mm 1000pcs ar-2011 Cx30sec, 14-Mar-2011 PDF

    Untitled

    Abstract: No abstract text available
    Text: Dialight 591 - 7602-1XX True Surface Mount LED COLLECTOR ID Part No.* Configuration 591-7602-1 xx 900 nm Phototransistor Applications 3.0 • Control and drive circuits LED LEAD SOLDERING SURFACE A I 1-120] “ *i • Copiers • Proximity Sensors COLLECTOR


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    7602-1XX PDF

    Untitled

    Abstract: No abstract text available
    Text: 3mm Dialight Prism CBI Infra-Red Detector True Surface Mount LED Preliminary Design 591-7602-1 xx Part No. Configuration 591-7602-1 xx 900 nm Phototransistor Applications • Control and drive circuits • Copiers • Proximity Sensors • Data Links Benefits


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    201Hb72 PDF

    Untitled

    Abstract: No abstract text available
    Text: Dîalîght 591 7602-1XX True Surface Mount LED - Part No.* 591-7602-1 xx COLLECTOR ID 2.1 6.1 [.082] ' [.240] ' Configuration 900 nm Phototransistor T ~ 2.8 [. 112] A p p licatio n s [.004] MAX. BELOW SURFACE A • Control and drive circuits v LED LEAD SOLDERING


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    7602-1XX I-079] PDF

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER UNCONTROLLED DOCUMENT REV. SSI —LXR501 OS RC 2848 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN PEAK WAVELENGTH Vf=2fiV TYP MAX UNITS 660 nm 2a.o Vf AXIAL INTENSITY 900 Vr mod VIEWING ANGLE 30 2x thêta FORWARD VOLTAGE REVERSE VOLTAGE


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    --LXR501 100juA SSL--LX50935RC/C LXP-WST24RDT0C, PDF

    phototransistor 600 nm

    Abstract: sensitive vibration detector C908 UL 94v-0 board
    Text: 3mm Prism CBI Infra-Red Detector True Surface Mount LED Preliminary Design Dialight 591-7602-1 xx Part No. Configuration 591-7602-1 xx 900 nm Phototransistor A pplications • C ontrol and drive circuits 'L E D LEAD SOLDERING SURFACE A • C opiers • P roxim ity S ensors


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    2fllEb72 GGD4b71 phototransistor 600 nm sensitive vibration detector C908 UL 94v-0 board PDF

    Untitled

    Abstract: No abstract text available
    Text: M M m , T-3% MINIATURE LAMP WITH LENS High Intensity Wide Angle Data Display Products •Fresnel Lens ■Bayonet or Screw Base Modal1'1 MB402 MS402 IBayonet -R 1Screw -O -A -G -B LED Xpk Color nm RED 635 ORG 609 AMB 592 GRIM 520 BLU 465 Iv« (mcd) 900 (*4)


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    V/75mA V/85mA V/40mA V/60mA 2V/30mA 4V/40mA 5V/30mA V/35mA 4V/30mA 6V/35mA PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT INFORMATION 900 nm 1A226 H igh-Ferformance LED The wavelength for this LED is 900nm —ideal for unique sensor applictions. The d ou b le-len s op tical system achieves optimum coupling of power into the fiber. It’s packaged in a her­ metically sealed can to survive harsh


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    1A226 900nm 1-800-96M PDF

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT 05,90 [00,232] 0 5 .0 0 PART NUMBER REV. SSL-LX5093VC W 0 .1 9 7 ] ELECTRO—OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER SYMBOL MIN PEAK WAVELENGTH TYP MAX Vf Vr 5 lv X Y 900 AXIAL INTENSITY *1 CHROMATICITY COORDINATES^) TEST COND nm


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    SSL-LX5093VC 550nm DECL05URE PDF

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT 05,90 [00,232] 0 5 .0 0 PART NUMBER REV. SSL-LX5093VC W 0 .1 9 7 ] ELECTRO—OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER SYMBOL MIN PEAK WAVELENGTH TYP MAX Vf Vr 5 lv X Y 900 AXIAL INTENSITY *1 CHROMATICITY COORDINATES^) TEST COND nm


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    SSL-LX5093VC el004] 550nm LX5093VC DECL45URE PDF

    Untitled

    Abstract: No abstract text available
    Text: LED-1 B HIGH POWER GaAs INFRARED EMITTING DIODES 920 nm il OPTOELECTRONICS 1 0 900 PAGE BLVD. ST. LOUIS, M O . 63132 USA PHONE 3 1 4 -4 2 3 -4 9 0 0 TW X 910-764-0811 FEATURES: PRODUCT DESCRIPTION: • Eight standard packages in This series of Infrared emitting diodes {IREDs consists of


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    10pps. PDF

    C 34 F

    Abstract: AR 601
    Text: Kingbright THRO UG H-HO LE LED LAMPS L7104S L934S L7123S r\ f □ * , K -i K P art No. Em itting C o lo r + M aterial XD nm Le ns Ty pe Iv (m cd) @ 20 m A Min. I V iew ing A n 9 ,e Typ. 291/2 150 40 700 2000 1300 1300 1300 800 2000 3500 700 700 250 900 600


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    L7104S L934S L7123S L7104SGC L7104SGD L7104MGC L7104VGC/E L7104SURC/E L7104SEC L7104SET C 34 F AR 601 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT 300 400 PART NUMBER REV. S S L - L X 5 0 9 3 S W C /A 500 600 700 800 900 WAVELENGTH nm "UNLESS UNCONTROLLED DOCUMENT OTHERWISE SPECIFIED TOLERANCES PER OECIIAL PRECISION ARE: X=±T (±0.039), XJUtO.5 (±0.020), X.XX=±0.2S (±0.010), X.XXX=±0.127 (±0.005). LEAD SIZE=±0.05 (±0.002), LEAD l£NGTH=±0.75 (±0.030). MIN=


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    SSL-LX5093SWC/A PDF

    Untitled

    Abstract: No abstract text available
    Text: Kíngbríght BASED LED LAMPS B LB 101xxx-xV -P B LB 102xxx-xV -P B LFA 054xxx-xV £&• m Mj Material X D nm Lens Type Iv(m cd) V=6V Viewing *V=12V *V=28V Angle Min. f Typ. Dimension w ater clear 900 2200 20° 630 w ater clear *650 *1800 20° B LB 101S U R C /E 28V


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    101xxx-xV 102xxx-xV 054xxx-xV LB101SYC BLB101SYC -12V-P -28V-P BLB101M PDF