Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    90 P 6 PIN MOSFET Search Results

    90 P 6 PIN MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    90 P 6 PIN MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM600P03CS 30V P-Channel Power MOSFET SOP-8 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS -30 V RDS on (max) VGS = -10V 60 VGS = -4.5V 90 Qg Ordering Information


    Original     		TSM600P03CS TSM600P03CS 900ppm 1500ppm 1000ppm PDF

    TSM9435

    Abstract: 27BSC TSM9435CS
    Text: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram ● Advance Trench Process Technology


    Original     		TSM9435 TSM9435CS TSM9435 27BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary TSM443K12 20V P-Channel MOSFET with Schottky Diode MSOP-8 Pin Definition: 1. Anode 5. Cathode 2. Anode 6. Cathode 3. Source 7. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -20 Features ID (A) 90 @ VGS = -4.5V -3.3 130 @ VGS = -2.5V


    Original     		TSM443K12 TSM443K12CB PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram ● Advance Trench Process Technology


    Original     		TSM9435 TSM9435CS PDF

    TSM3441

    Abstract: TSM3441CX6
    Text: TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 90 @ VGS = -4.5V -3.3 110 @ VGS = -2.5V -2.9 Block Diagram ● Advance Trench Process Technology


    Original     		TSM3441 OT-26 TSM3441CX6 TSM3441 PDF

    block diagram of schottky diode

    Abstract: P-Channel MOSFET code 1A TSM443K12
    Text: TSM443K12 20V P-Channel MOSFET with Schottky Diode MSOP-8 Pin Definition: 1. Anode 5. Cathode 2. Anode 6. Cathode 3. Source 7. Drain 4. Gate 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -20 Features ● ● ID (A) 90 @ VGS = -4.5V -3.3 130 @ VGS = -2.5V -1.2


    Original     		TSM443K12 TSM443K12CB block diagram of schottky diode P-Channel MOSFET code 1A TSM443K12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(m) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram  Advance Trench Process Technology 


    Original     		TSM9435 TSM9435CS PDF

    TSM4433

    Abstract: TSM4433CS MOSFET P-channel power mosfet marking A07 27BSC
    Text: TSM4433 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain -20 Features ID (A) 90 @ VGS = -4.5V -3.9 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Block Diagram ● Advance Trench Process Technology


    Original     		TSM4433 TSM4433CS TSM4433 TSM4433CS MOSFET P-channel power mosfet marking A07 27BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM4433 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain -20 Features ID (A) 90 @ VGS = -4.5V -3.9 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Block Diagram  Advance Trench Process Technology


    Original     		TSM4433 TSM4433CS PDF

    27BSC

    Abstract: TSM4433D Dual P-Channel MOSFET
    Text: TSM4433D 20V Dual P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 1 1 2 2 -20 Features ID (A) 90 @ VGS = -4.5V -3.9 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V


    Original     		TSM4433D TSM4433DCS 27BSC TSM4433D Dual P-Channel MOSFET PDF

    Dual P-Channel MOSFET 30v

    Abstract: 27BSC TSM4953D TSM4953DCS
    Text: TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) 1 1 2 2 -30 Features ID (A) 60 @ VGS = 10V -4.9 90 @ VGS = 4.5V -3.7 Block Diagram


    Original     		TSM4953D TSM4953DCS Dual P-Channel MOSFET 30v 27BSC TSM4953D PDF

    Untitled

    Abstract: No abstract text available
    Text: TSM4433D 20V Dual P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain PRODUCT SUMMARY VDS V RDS(on)(m) 1 1 2 2 -20 Features ID (A) 90 @ VGS = -4.5V -3.9 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V


    Original     		TSM4433D TSM4433DCS PDF

    27BSC

    Abstract: TSM4953D
    Text: TSM4953D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -4.9 90 @ VGS = 4.5V -3.7 Block Diagram


    Original     		TSM4953D TSM4953DCS 27BSC TSM4953D PDF

    TSC 745

    Abstract: No abstract text available
    Text: TSM4953D 30V Dual P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 VDS V RDS(on)(mΩ) ID (A) 60 @ VGS = 10V -4.9 90 @ VGS = 4.5V -3.7 -30 Features Block Diagram


    Original     		TSM4953D TSM4953DCS TSC 745 PDF

    pF3900

    Abstract: No abstract text available
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 2A Peak


    Original     		IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15 D-68623; pF3900 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak


    Original     		IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15 PDF

    RA60H1317M1A

    Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to


    Original     		RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor PDF

    IXDI402PI

    Abstract: IXDI402SI IXDI402SIA IXDI402SIA-16 IXDN402PI IXDN402SI IXDI402SI-16 IXDN402SI-16 IXDN402SIA IXDN402SIA-16
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak


    Original     		IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15 D-68623; IXDI402PI IXDI402SI IXDI402SIA IXDI402SIA-16 IXDN402PI IXDN402SI IXDI402SI-16 IXDN402SI-16 IXDN402SIA IXDN402SIA-16 PDF

    IXDN402SIA

    Abstract: IXDN402 IXDN402PI IXDN402SI SOIC-16 IXDF402SIA
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak


    Original     		IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15 IXDN402SIA IXDN402PI IXDN402SI SOIC-16 IXDF402SIA PDF

    IXDD402

    Abstract: No abstract text available
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 0.5A • High Peak Output Current: 2A Peak


    Original     		IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15 D-68623; IXDD402 PDF

    ixdd402

    Abstract: IXDN402SI IXDF402SIA IXDN402 IXDN402PI IXDN402SIA SOIC-16
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 2A Peak


    Original     		IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15 ixdd402 IXDN402SI IXDF402SIA IXDN402PI IXDN402SIA SOIC-16 PDF

    Igg22

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA60H3847M1A RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H3847M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of DMR that operate in the 378- to 470-MHz range.


    Original     		RA60H3847M1A 378-470MHz RA60H3847M1A 60-watt 470-MHz Igg22 PDF

    LT 7210

    Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		RA60H4452M1 440-520MHz RA60H4452M1 60-watt 520-MHz LT 7210 lt 7210 datasheet 440M 470M RA60H4452M1-101 PDF

    RA55H4452M

    Abstract: No abstract text available
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		RA55H4452M 440-520MHz RA55H4452M 55-watt 520-MHz PDF