dot matrix printer circuit diagram datasheet
Abstract: HA13408 dot matrix printer Hitachi DSA00231 HA-13408 hitachi feeder
Text: HA13408 9-Channel Power Driver ADE-207-206 Z 1st Edition July 1996 Description The HA13408 9-channel power driver IC is designed to drive dot matrix printer head. This IC can drive 9 pins without using any external components. HA13408 can be used for 2 system four-phase step drive, as
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HA13408
ADE-207-206
HA13408
dot matrix printer circuit diagram datasheet
dot matrix printer
Hitachi DSA00231
HA-13408
hitachi feeder
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ET840
Abstract: No abstract text available
Text: ET840 9 Amps， ，500Volts N-Channel MOSFET • Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
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ET840
Amps500Volts
ET840
O-220
O-220F
O220F
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88W51
Abstract: ET630
Text: ET630 9 Amps， 200Volts N-CHANNEL MOSFET • DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
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ET630
200Volts
ET630
00A/s
Width300s
88W51
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Untitled
Abstract: No abstract text available
Text: MAX5112 9-Channel, 14-Bit, Current DAC with I2C Interface General Description Features The MAX5112 is a 14-bit, 9-channel, current-output digital-to-analog converter DAC . The device operates from a low +3.0V power supply and provides 14-bit performance without any adjustment.
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MAX5112
14-Bit,
MAX5112
14-bit
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Untitled
Abstract: No abstract text available
Text: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device
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BSS87
SC-62)
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TB62781
Abstract: tb6278
Text: TB62781FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB62781FNG 9-Channel Constant-Current LED Driver of the 3.3V and 5V Power Supply Voltage Operation 1. Features • Power supply voltages: VCC = 3.3 V/5 V • Output drive capability and output count: 80 mA max x 9 channels
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TB62781FNG
TB62781
tb6278
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TB62781
Abstract: No abstract text available
Text: TB62781FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB62781FNG 9-Channel Constant-Current LED Driver of the 3.3V and 5V Power Supply Voltage Operation 1. Features • Power supply voltages: VCC = 3.3 V/5 V • Output drive capability and output count: 80 mA max x 9 channels
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TB62781FNG
TB62781
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TQFP-64-EP
Abstract: No abstract text available
Text: iW7032 32-Channel LED Driver for LCD Panel Backlighting 2.0 Description 1.0 Features ● Fully integrated power FET with minimum external components ● Proprietary digital power management and patented adaptive switch mode LED driver ● 32-channel output each at 56 V with 9 V to 28 V input
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iW7032
32-Channel
TQFP-64-EP
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Untitled
Abstract: No abstract text available
Text: iW7022 16-Channel LED Driver for LCD Panel Backlighting 1.0 Features 2.0 Description ● Fully integrated power FET with minimum external components ● Proprietary digital power management and patented adaptive switch mode LED driver ● 16-channel output each at 60 V with 9 V to 28 V input
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iW7022
16-Channel
iW7022
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Untitled
Abstract: No abstract text available
Text: DS92LV090A DS92LV090A 9 Channel Bus LVDS Transceiver Literature Number: SNLS025C DS92LV090A 9 Channel Bus LVDS Transceiver General Description Features The DS92LV090A is one in a series of Bus LVDS transceivers designed specifically for the high speed, low power proprietary backplane or cable interfaces. The device operates from
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DS92LV090A
DS92LV090A
SNLS025C
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IPC-2221
Abstract: marking HB diode HIP2100 HIP2101 ISL2100A ISL2100AAR3Z ISL2101A ISL2101AAR3Z IPC2221
Text: ISL2100A, ISL2101A Data Sheet September 9, 2009 100V, 2A Peak, High Frequency Half-Bridge Drivers FN6294.2 Features • Drives N-Channel MOSFET Half-Bridge The ISL2100A, ISL2101A are 100V, high frequency, half-bridge N-channel power MOSFET driver ICs. They are
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ISL2100A,
ISL2101A
FN6294
ISL2101A
HIP2100,
HIP2101
ISL2100A
ISL2101A,
IPC-2221
marking HB diode
HIP2100
ISL2100A
ISL2100AAR3Z
ISL2101AAR3Z
IPC2221
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MC34704 Rev. 6.0, 9/2011 Multiple Channel DC-DC Power Management IC 34704 The 34704 is a multi-channel Power Management IC PMIC used to address power management needs for various multimedia application microprocessors. Its ability to provide either 5 or 8
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MC34704
QFN56
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a
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O-220
O-220F1
QW-R502-493
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9N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state
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QW-R502-522
9N50
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Untitled
Abstract: No abstract text available
Text: FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Ω Features Description • 9 A, 900 V, RDS on = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
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FQA9N90C
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DS36BC959
Abstract: S8090 X3-129-1986 480b7
Text: ADVANCE INFORMATION Semiconductor October 1994 DS36BC959 Low Power BiCMOS 9-Channel Multipoint Transceiver General Description Features The DS36BC959 is a 9-bit, low power transceiver optimized for applications using the differential SCSI Interface. Each channel has its own driver and receiver enable control pin.
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DS36BC959
56-pin
20-3A
VJC3168
S8090
X3-129-1986
480b7
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block diagram of dot matrix printer
Abstract: ha13408 SP-23TA VI-08 HA-13408
Text: HA13408 9-Channel Power Driver Description HA 13408 The H A 13408 9-channel pow er driver IC is designed lo drive dot matrix printer head. This IC can drive 9 pins w ithout using any external components. HA 13408 can be used for 2 system four-phase step drive, as every channel is used
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HA13408
SP-23TA)
SP-23TA
block diagram of dot matrix printer
SP-23TA
VI-08
HA-13408
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Untitled
Abstract: No abstract text available
Text: in te rrii RFG60P03, RFP60P03, RF1S60P03SM D a la S h e e t J u ly 1 9 9 9 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 5 1 .3 Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature
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RFG60P03,
RFP60P03,
RF1S60P03SM
TA49045.
RF1S60P03SM
AN7254
AN7260.
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8A60V
Abstract: rfp8p06e
Text: RFD8P06E, RFD8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFD8P06E,
RFD8P06ESM,
RFP8P06E
RFD8P06ESM
RFP8P06E
AN7254
8A60V
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2SK1059
Abstract: 2SK1059-Z 2SK1059Z 2SK105 ScansUX881
Text: '* f * .i f N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2 S K 1 0 5 9 , 2 S K 1 0 5 9 -Z DESCRIPTION The 2SK1059, 2SK1059-Z are N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATURES • 4 V Gate Drive — Logic level —
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2SK1059,
2SK1059-Z
2SK1059-Z
1989M
2SK1059
2SK1059Z
2SK105
ScansUX881
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TA09532
Abstract: No abstract text available
Text: interrii " RFP2N20L I D atei S h e e t J u ly 1 9 9 9 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use
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RFP2N20L
TA09532.
AN7254
AN7260
TA09532
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Untitled
Abstract: No abstract text available
Text: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives
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RFG30P05,
RFP30P05,
RF1S30P05SM
TA09834.
RFG30P0S,
RF1S30P05SM
AN7260.
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Untitled
Abstract: No abstract text available
Text: 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N Channel: RDSu,n < 0 .5 £1, V os = 10 V, ID = 2 A P Channel: RDS on) < 0 .9 Vas = - 1 0 V, ID = - 2 A • Low drive current
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4AM15
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IRF510
Abstract: Gate Drive circuit for irf510 Fairchild Semiconductor DS-513 MTP4N10 IRF-510 DD57 IRF510-513 IRF511 IRF512 IRF513
Text: 3469674 FAIRCHILD SEMICONDUCTOR D iT l 3 4 1 ^ 7 4 DGH7TB4_fl IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description These devices are n-channel, enhancement mode, power
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IRF510-513
MTP4N08/4N10
O-220AB
IRF510
IRF511
IRF512
IRF513
MTP4N08
MTP4N10
IRF510-513
IRF510
Gate Drive circuit for irf510
Fairchild Semiconductor DS-513
MTP4N10
IRF-510
DD57
IRF511
IRF512
IRF513
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