SN75129
Abstract: 1N3064 SN75128 SN751730
Text: SN75128, SN75129 EIGHT-CHANNEL LINE RECEIVERS SLLS076B – JANUARY 1977 – REVISED MAY 1995 • • • • • • • • • Meets or Exceeds the Requirements of IBM System 360/370 Input/Output Specification Input Resistance . . . 7 kΩ to 20 kΩ
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SN75128,
SN75129
SLLS076B
SN75128
SN75129
1N3064
SN75128
SN751730
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SN75128
Abstract: SN75129 1N3064 SN751730
Text: SN75128, SN75129 EIGHT-CHANNEL LINE RECEIVERS SLLS076B – JANUARY 1977 – REVISED MAY 1995 • • • • • • • • • Meets or Exceeds the Requirements of IBM System 360/370 Input/Output Specification Input Resistance . . . 7 kΩ to 20 kΩ
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SN75128,
SN75129
SLLS076B
SN75128
SN75128
SN75129
1N3064
SN751730
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SN75129
Abstract: 1N3064 SN75128 SN751730
Text: SN75128, SN75129 EIGHT-CHANNEL LINE RECEIVERS SLLS076B – JANUARY 1977 – REVISED MAY 1995 • • • • • • • • • Meets or Exceeds the Requirements of IBM System 360/370 Input/Output Specification Input Resistance . . . 7 kΩ to 20 kΩ
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SN75128,
SN75129
SLLS076B
SN75128
SN75129
1N3064
SN75128
SN751730
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SN75129
Abstract: SN75128 1N3064 SN75128N SN75129DW SN75129N SN751730
Text: SN75128, SN75129 EIGHT-CHANNEL LINE RECEIVERS SLLS076B – JANUARY 1977 – REVISED MAY 1995 • • • • • • • • • Meets or Exceeds the Requirements of IBM System 360/370 Input/Output Specification Input Resistance . . . 7 kΩ to 20 kΩ
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SN75128,
SN75129
SLLS076B
SN75128
SN75129
SN75128
1N3064
SN75128N
SN75129DW
SN75129N
SN751730
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SN75129
Abstract: No abstract text available
Text: SN75128, SN75129 EIGHTĆCHANNEL LINE RECEIVERS ą ą SLLS076B − JANUARY 1977 − REVISED MAY 1995 • • • • • • • • • N PACKAGE TOP VIEW Meets or Exceeds the Requirements of IBM System 360/370 Input/Output Specification Input Resistance . . . 7 kΩ to 20 kΩ
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SN75128,
SN75129
SLLS076B
SN75128
SN75129
SN75128
SN75129,
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SN75128N
Abstract: SN75129 SN75128 1N3064 SN75129DW SN75129N SN751730 IEC schematic symbols 5186A SN7517
Text: SN75128, SN75129 EIGHTĆCHANNEL LINE RECEIVERS ą ą SLLS076B − JANUARY 1977 − REVISED MAY 1995 • • • • • • • • • N PACKAGE TOP VIEW Meets or Exceeds the Requirements of IBM System 360/370 Input/Output Specification Input Resistance . . . 7 kΩ to 20 kΩ
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SN75128,
SN75129
SLLS076B
SN75128
SN75128N
SN75129
SN75128
1N3064
SN75129DW
SN75129N
SN751730
IEC schematic symbols
5186A
SN7517
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SN75129
Abstract: No abstract text available
Text: SN75128, SN75129 EIGHTĆCHANNEL LINE RECEIVERS ą ą SLLS076B − JANUARY 1977 − REVISED MAY 1995 • • • • • • • • • N PACKAGE TOP VIEW Meets or Exceeds the Requirements of IBM System 360/370 Input/Output Specification Input Resistance . . . 7 kΩ to 20 kΩ
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SN75128,
SN75129
SLLS076B
SN75128
SN75129
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UN1216
Abstract: XN6216
Text: Composite Transistors XN6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Collector to base voltage Rating Collector to emitter voltage of element Collector current 1 : Collector Tr1 2 : Base (Tr1)
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XN6216
UN1216
XN6216
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UN1216
Abstract: XP6216
Text: Composite Transistors XP6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1216 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings
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XP6216
UN1216
UN1216
XP6216
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UN1216
Abstract: UNR1216 XN06216 XN6216
Text: Composite Transistors XN06216 XN6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current
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XN06216
XN6216)
UN1216
UNR1216
XN06216
XN6216
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UN2216
Abstract: UNR2216 XP06216 XP6216
Text: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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XP06216
XP6216)
UN2216
UNR2216
XP06216
XP6216
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UN2216
Abstract: UNR2216 XP06216 XP6216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 (XP6216) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP06216
XP6216)
UN2216
UNR2216
XP06216
XP6216
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UN2216
Abstract: UNR2216 XN06216 XN6216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element
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2002/95/EC)
XN06216
XN6216)
UN2216
UNR2216
XN06216
XN6216
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UN1216
Abstract: UNR1216 XP06216 XP6216
Text: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP06216
XP6216)
UNR1216
UN1216)
UN1216
XP06216
XP6216
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element
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2002/95/EC)
XN06216
XN6216)
UNR2216
UN2216)
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UN2216
Abstract: UNR2216 XN06216 XN6216
Text: Composite Transistors XN06216 XN6216 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package
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XN06216
XN6216)
UN2216
UNR2216
XN06216
XN6216
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 (XP6216) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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Original
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PDF
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2002/95/EC)
XP06216
XP6216)
UNR2216
UN2216)
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UN1216
Abstract: UNR1216 XP06216 XP6216
Text: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter
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XP06216
XP6216)
UNR1216
UN1216)
UN1216
XP06216
XP6216
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UN2216
Abstract: UNR2216 XN06216 XN6216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05
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2002/95/EC)
XN06216
XN6216)
UN2216
UNR2216
XN06216
XN6216
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SN75129
Abstract: 1N3064 SN75128
Text: SN75128, SN75129 EIGHT-CHANNEL LINE RECEIVERS SLLS076A- D2305, JANUARY 1977 - REVISED MARCH 1993 N PACKAGE Meets IBM 360/370 I/O Specification TOP VIEW Input Resistance. . . 7 k£2 to 20 kQ 1S/1 S t [ 1 1A [ 2 Output Compatible With TTL Schottky-Clamped Transistors
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SN75128,
SN75129
SLLS076A-
D2305,
SN75128.
SN75129.
SN75128
SN75129,
SN75129
1N3064
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MPQ6700
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Com plem entary Pair Transistor M PQ6700 ÎTÎ1 NPN/PNP Silicon Hä! rm Rol l~9l fTI LfvJ L r \i MPQ6502 For Specifications, See MPQ6001 Data . COMPLEMENTARY r y i. l Li l¿ J j y i L Ì! L iJ L ÍJ l i l LÍJ MPQ6600A1
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PQ6700
MPQ6502
MPQ6001
MPQ6600A1
MPQ6100A
MPQ6700
b3b7255
MPQ6700
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SN75129
Abstract: No abstract text available
Text: SN75128, SN75129 EIGHT-CHANNEL LINE RECEIVERS S L L S 07 6B -J A N U A R Y 1 9 7 7 - REVISED MAY 1995 N PACKAGE * Meets or Exceeds the Requirements of IBM System 360/370 Input/Output Specification {TOP VIEW i 1 S/1 S t [ • Input Resistance. . . 7 ki2 to 20 k£i
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SN75128,
SN75129
SN75128.
SN75129.
SLLS076B
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T3D 54 DIODE
Abstract: Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE
Text: SSE N AMER PHILIPS / D I S CR E T E bbSBT31 002Cm50 T J> PowerMOS transistor BUK453-100A BUK453-1OOB T -21-11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbSBT31
002Cm50
BUK453-100A
BUK453-1OOB
BUK453
-100A
-100B
T3D 54 DIODE
Diode T3D 56
Diode T3D 24
T3D 75 diode
T3D 77 diode
T3D 01 DIODE
T3D 55 diode
Diode T3D 54
T3D 20 diode
T3D+54+DIODE
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BSY17
Abstract: BSY18 transistor w1w 2N708 BSY62 2N743 BSY62A BSY62B Q60218-Y17 Q60218-Y18
Text: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, B SY 62 and B S Y 63 are double-diffused epitaxial N PN silicon planar RF transistors in a case 1 8 A 3 DIN 41876 TO-18 . Their collectors are elec trically connected to their cases. Transistor B S Y 17 corresponds to type 2N 7 4 3 ,
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BSY17,
BSY18,
2N743,
2N708.
Q60218-Y17
Q60218-Y18
BSY62A
Q60218-Y62-A
BSY62B
Q60218-Y62-B
BSY17
BSY18
transistor w1w
2N708
BSY62
2N743
Q60218-Y17
Q60218-Y18
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