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    TDK Electronics B66208X1010T001

    BOBBIN COIL FORMER E 25 X 13 X 7
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    DigiKey B66208X1010T001 Box 9,753 1
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    Walsin Technology Corporation WR08X101-JTL

    RES 100 OHM 5% 1/8W 0805
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    Bourns Inc 4608X-101-203LF

    RES ARRAY 7 RES 20K OHM 8SIP
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    Bourns Inc 4608X-101-473LF

    RES ARRAY 7 RES 47K OHM 8SIP
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    Bourns Inc 4608X-101-122LF

    RES ARRAY 7 RES 1.2K OHM 8SIP
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    8X101 Datasheets Context Search

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    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


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    10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 PDF

    tic 1060

    Abstract: No abstract text available
    Text: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,


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    303Qb] C30807, C30808, C30809 C30810, C30822, C30831 C30808 C30809, C30822 tic 1060 PDF

    5962-06203

    Abstract: 5962-07210 "rad" sram
    Text: Aeroflex 4M SRAM Industry Comparison 0.18µm CMOS Aeroflex 0.25µm Bulk CMOS 0.35µm CMOS SOI 0.25µm CMOS 0.18µm 0.25µm 0.35µm 0.25µm 66 MHz @ 15ns 512K x 8 15 ns -55° to 125°C 28MHz @ 30 ns 512K x 8 30ns(-550 to 1250C) 40 MHz @20ns 512K x 8 < 20 ns (-550 to 1250C)


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    28MHz 1250C) 66MHz 1x10-10 8x10-10 1x10-9 5962-06203 5962-07210 "rad" sram PDF

    hamamatsu c1000

    Abstract: A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm
    Text: HIGH-SPEED GATED IMAGE INTENSIFIER UNITS C7244, C7245 Capturing still images of high-speed phenomena! C-mount adapter is optional. The Hamamatsu C7244 and C7245 are high-speed gated image intensifier units developed specifically for imaging of highspeed phenomena occurring at low light levels. These image intensifier units consist of an image intensifier head and its controller with a built-in high voltage power supply. The image intensifier head easily connects to the front of a CCD camera to configure a high-speed shutter camera that allows capturing still images of high-speed phenomena at any desired timing. The C7244


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    C7244, C7245 C7244 C7245 C7244 S-164-40 TAPP1027E01 hamamatsu c1000 A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm PDF

    Untitled

    Abstract: No abstract text available
    Text: T1300 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev F PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Low Phase Noise SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Short Term Aging Input Voltage


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    T1300 10MHz, 15pF/10kohm 2x10-6 1x10-7 8x10-11 10MHz) 10msec 7x10-11/g, T1300-5 PDF

    A950 O

    Abstract: BPX90 F
    Text: SIEMENS BPX 90 BPX 90F DAYLIGHT FILTER Silicon Planar Photodiode BPX 90 FEATURES • Especially suitable for applications - BPX 90:400nm to 1100 nm - BPX90 F: 950 nm • High photosensitivity • DIL plastic package with high packing den­ sity APPLICATIONS


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    400nm BPX90 BPX90-- BPX90F--Relative A950 O BPX90 F PDF

    philips ecg master replacement guide

    Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    PDF

    RTV3110

    Abstract: 4526a Burle 4526A B12-43 BURLE INDUSTRIES 10-STAGE JEDEC B12-43 burle 4526A photomultiplier JEDEC B12-43 S-20
    Text: Return To Product Page 4526A Photomultiplier 10-Stage Dormer-Window Type Having Multialkali Photocathode Deposited on a Reflective Substrate ! High Cathode Sensitivity Typical : Radiant at 530 nm: 70 x 10-3 A/W Luminous: 315 x 10-6 A/lm ! Quantum Efficiency (Typical):


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    10-Stage RTV3110 4526a Burle 4526A B12-43 BURLE INDUSTRIES JEDEC B12-43 burle 4526A photomultiplier JEDEC B12-43 S-20 PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    PDB-C607-2

    Abstract: No abstract text available
    Text: Solderable Silicon Photodiodes PDB-C607-2 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ± .050 [1.27] 2X 1.25 [31.8] RED 30 AWG PVC WIRE, ANODE 2X .250 [6.35] 2X TINNED BLACK 30 AWG PVC WIRE, CATHODE .021 [0.53] .014 [0.36] CHIP DIMENSIONS INCH [mm]


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    PDB-C607-2 PDB-C607-2 PDF

    ECG transistor replacement guide book free

    Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS x tx c k x c o n R ChipType' cv L . H '9 h For SMD • Chip type, higher capacitance in larger case sizes. • Designed for surface mounting on high density PC board. • Applicable to automatic mounting machine using carrier tape.


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    120Hz, apa162) 10x10 10x10 10x101305 10x10| 120Hz PDF

    CY7B923

    Abstract: CY7B933 CY9266-C
    Text: t HOTLink Jitter Characteristics Abstract This application note describes the basics of jitter in transmission systems and, using HOTLink as the example, shows how it can be analyzed and meaĆ sured. Specific characterization data is presented that will allow system integrators to understand the


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    CY7B923) CY7B933) CY7B923 CY7B933 CY9266-C PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS KOM 2033 B DAYLIGHT FILTER KOM 2033 BF KOM 2100 B DAYLIGHT FILTER KOM 2100 BF 6-CHIP SILICON PIN PHOTODIODE ARRAY Package Dimensions in mm KOM 2033 B/BF Frame PC board \ A z£ Chip Coating 1.3 ± .5 5 • p.8 * .2 Schematic A1 o — ° K1 A 2o — |> ^ -o K 2


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    fl23h3Sb X1012 KOM2O33B/21OO6/2O336F/21OO0F flS3b32b 2033B/2100B 2033BF/21OOBF KOM2C338/21 006/2033BF/21006F S53b32fc, 0007ST? PDF

    C1383 transistor

    Abstract: C1383 C1921 transistor c1983 transistor C1973 transistor C1983 16 transistor C982 C1393 transistor C943 transistor c1972
    Text: channel photomultipliers CPM Features • Ultra-high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3 pA @ 106 gain • Very low equivalent noise input down to 10-17 W • High stability in dark current (“no bursts”) • High gain exceeding 108


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    pA/500 MP1982 MH1982 MH1982P 2x10-17 MD1983 MP1983 MH1983 C1383 transistor C1383 C1921 transistor c1983 transistor C1973 transistor C1983 16 transistor C982 C1393 transistor C943 transistor c1972 PDF

    C30807

    Abstract: C30810 C30822 C30822 photodiode C3081 k2645 C30808 C30809 C30831 C30839
    Text: N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description Features This family of N-type silicon p-i-n • Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2 photodiodes is designed for use in a wide


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    C30807, C30808, C30809, C30810, C30822, C30831 C30807 C30809 C30808 C30810 C30822 C30822 photodiode C3081 k2645 C30808 C30809 C30831 C30839 PDF