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    da53

    Abstract: DB26
    Text: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any


    Original     		PDF 8Mx16/18x4i) DL0117-010 da53 DB26

    is42s16320

    Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S16320B is42s16320 IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 SEPTEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42S86400B 54-pin IS42/45S16320B IS42S86400B,

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-ball

    IS42S16320D-7TLI

    Abstract: IS42S16320D is42s16320 IS42S16320D-7BL IS42S86400D-7TL IS42S16320D-7TL IS45S16320D-7TLA1 IS42S16320D-5TL IS45S16320D-7TLA2 is42s86400
    Text: IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 PRELIMINARY INFORMATION JUNE 2011 512Mb SDRAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge


    Original     		PDF IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 512Mb IS42/45SxxxxxD IS42/45RxxxxxD IS42/45R86400D/16320D/32160D, IS42S16320D-7TLI IS42S16320D is42s16320 IS42S16320D-7BL IS42S86400D-7TL IS42S16320D-7TL IS45S16320D-7TLA1 IS42S16320D-5TL IS45S16320D-7TLA2 is42s86400

    IS45S16320B

    Abstract: No abstract text available
    Text: IS45S16320B 32Meg x 16 512-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION OCTOBER 2007 • Clock frequency: 133 MHz OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a positive clock edge data transfer using pipeline architecture. All inputs and


    Original     		PDF IS45S16320B 32Meg 512-MBIT 512Mb x16x4 54-pin IS45S16320B

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge DECEMBER 2011 OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B 11x13mm IS42S86400B,

    IS42S86400B

    Abstract: IS42S16320B is42s86400
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 OCTOBER 2010 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S2/45S16320B IS42S86400B IS42S16320B is42s86400

    IS45S16320B-7TLA2

    Abstract: IS42S86400B IS42S16320B IS45S16320B
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 APRIL 2011 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B Sel2/45S16320B 11x13mm IS45S16320B-7TLA2 IS42S86400B IS42S16320B IS45S16320B

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR86400D IS43/46DR16320D 64Mx8, 32Mx16 DDR2 DRAM APRIL 2014 FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43/46DR86400D IS43/46DR16320D 64Mx8, 32Mx16 18-compatible) DDR2-800D IS46DR16320D-25DBLA2 DDR2-667D IS46DR16320D-3DBLA2 IS43/46DR86400D,

    is42s16320

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2010 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42S86400B 54LTSOP-2 11x13mm IS42S86400B, IS42/45S16320B is42s16320

    Untitled

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2008 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-baches

    46LR32320B

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR32320B 8M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32320B is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32320B 32Bits IS43/46LR32320B 32-bit 32Mx32 IS46LR32320B-5BLA1 90-ball IS46LR32320B-6BLA1 -40oC 46LR32320B Mobile DDR SDRAM

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR86400C IS43/46DR16320C 64Mx8, 32Mx16 DDR2 DRAM MARCH 2013 FEATURES DESCRIPTION •฀ VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V •฀ JEDEC standard 1.8V I/O SSTL_18-compatible •฀ Double data rate interface: two data transfers per clock cycle •฀ Differential data strobe (DQS, DQS)


    Original     		PDF IS43/46DR86400C IS43/46DR16320C 64Mx8, 32Mx16 18-compatible) DDR2-800D IS46DR16320C-25DBLA2 DDR2-667D IS46DR16320C-3DBLA2 IS43/46DR86400C,

    ARC processor ISA ERET register

    Abstract: RC32438 79RC32438 DL1210 uart specification IDT CV 184 0x111d pcim 2014 be561 16MX8X4 ddr
    Text: IDT Interprise™ 79RC32438 Integrated Communications Processor User Reference Manual November 2002 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 330-1748 Printed in U.S.A. 2002 Integrated Device Technology, Inc.


    Original     		PDF 79RC32438 ARC processor ISA ERET register RC32438 DL1210 uart specification IDT CV 184 0x111d pcim 2014 be561 16MX8X4 ddr

    IS46DR16320C

    Abstract: IS43DR16320C-25DBL IS46DR16320C-25DBLA2 46DR IS43DR16320C-3DBL
    Text: IS43/46DR86400C IS43/46DR16320C 64Mx8, 32Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43/46DR86400C IS43/46DR16320C 64Mx8, 32Mx16 18-compatible) -40oC 105oC, 105oC DDR2-800D IS46DR16320C IS43DR16320C-25DBL IS46DR16320C-25DBLA2 46DR IS43DR16320C-3DBL

    ECE1077

    Abstract: mec5025 MAX8774 "" schematic lcd inverter dell STAC9205 quanta u36 max8774 EMC4001 Maxim MAX8774 0805 10V X7R 4.7UF quanta
    Text: 5 4 3 2 1 D D Quanta Project Name: JX6 Dell Project Name: MGD Lite 2007-03-01 C C REV : D3B A00/X-Build Stage B B A A Title QUANTA COMPUTER COVER PAGE 5 4 3 2 Size Document Number MGD Date: Friday, March 02, 2007 Rev 3A Sheet 1 1 of 89 1 2 3 4 5 6 JX6 MGD-INTEGRATED


    Original     		PDF A00/X-Build ICS951462 N52515842 N17279942 N17280085 N17212693 8774DL2 QFN32-5x5-5-42P QFN32-5x5-5-33P QFN44-6x6-5-50P ECE1077 mec5025 MAX8774 "" schematic lcd inverter dell STAC9205 quanta u36 max8774 EMC4001 Maxim MAX8774 0805 10V X7R 4.7UF quanta

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR86400D IS43/46DR16320D 64Mx8, 32Mx16 DDR2 DRAM PRELIMINARY INFORMATION FEBRUARY 2014 FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle


    Original     		PDF IS43/46DR86400D IS43/46DR16320D 64Mx8, 32Mx16 18-compatible) DDR2-800D IS46DR16320D-25DBLA2 DDR2-667D IS46DR16320D-3DBLA2 IS43/46DR86400D,

    is42s86400

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B 64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION APRIL 2008 FEATURES • Clock frequency: 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B 512Mb IS42S86400B 54-pin 54-ball IS42S86400B, 11x13mm is42s86400

    IS42S16320B

    Abstract: IS42S86400B
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 JUNE 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S16320B IS42S16320B IS42S86400B

    is42s16320

    Abstract: IS42S16320A
    Text: IS42S16320A 32Meg x 16 512-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION JUNE 2007 • Clock frequency: 143, 133 MHz OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a positive clock edge data transfer using pipeline architecture. All inputs and


    Original     		PDF IS42S16320A 32Meg 512-MBIT 54-pin is42s16320 IS42S16320A

    IS43LR32320B-5BLI

    Abstract: No abstract text available
    Text: IS43/46LR32320B Advanced Information 8M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32320B is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32320B 32Bits IS43/46LR32320B 32-bit -40oC 32Mx32 IS43LR32320B-5BLI IS43LR32320B-6BLI 90-ball

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32320B Advanced Information 8M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32320B is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32320B 32Bits IS43/46LR32320B 32-bit 32Mx32 IS43LR32320B-5BLI 90-ball IS43LR32320B-6BLI -40oC

    IS42S86400B

    Abstract: No abstract text available
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2011 512Mb SYNCHRONOUS DRAM OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge


    Original     		PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42S86400B IS42S86400B, IS42/45S16320B 11x13mm