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    Chemi-Con EKXG451ELL330MM20S

    Aluminum Electrolytic Capacitors - Radial Leaded 450volts 33uF 18X20
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    TTI EKXG451ELL330MM20S Bulk 20,000 500
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    Chemi-Con EKXG401ELL470MM20S

    Aluminum Electrolytic Capacitors - Radial Leaded 400volts 47uF 18X20
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    TTI EKXG401ELL470MM20S Bulk 16,500 500
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    Nichicon Corporation UHD1C681MPD6

    Aluminum Electrolytic Capacitors - Radial Leaded 16volts 680uF 10x16 20% 5LS
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    TTI UHD1C681MPD6 Bulk 8,900 100
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    Nichicon Corporation UPJ1J561MHD6

    Aluminum Electrolytic Capacitors - Radial Leaded 63volts 560uF 18x20 20% 7.5LS
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    TTI UPJ1J561MHD6 Bulk 2,450 50
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    Panasonic Electronic Components EEU-FS1A182L

    Aluminum Electrolytic Capacitors - Radial Leaded 10VDC 1800uF 9000H 8x20mm
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    TTI EEU-FS1A182L Bulk 1,800 200
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    8MMX20MM Datasheets Context Search

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    BS62LV2006

    Abstract: BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32
    Text: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : VCC = 3.0V Operation current : 23mA Max. at 55ns


    Original     		BS62LV2006 6/20uA R0201-BS62LV2006 BS62LV2006 BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32 PDF

    IN6AG

    Abstract: 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020 PDF

    TSOP32 pad

    Abstract: bs62lv1027 R0201-BS62LV1027
    Text: Very Low Power CMOS SRAM 128K X 8 bit BS62LV1027 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 18mA Max. at 55ns


    Original     		BS62LV1027 BS62LVontinued) R0201-BS62LV1027 TSOP32 pad bs62lv1027 R0201-BS62LV1027 PDF

    BS62LV1025

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1025 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current


    Original     		BS62LV1025 BS62LV1025SC BS62LV1025TC BS62LV1025STC BS62LV1025PC BS62LV1025JC BS62LV1025DC BS62LV1025SI BS62LV1025TI BS62LV1025STI BS62LV1025 PDF

    Untitled

    Abstract: No abstract text available
    Text: CAT28F010 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, industrial and automotive ■ Fast read access time: 90/120 ns temperature ranges ■ Low power CMOS dissipation: ■ On-chip address and data latches –Active: 30 mA max CMOS/TTL levels


    Original     		CAT28F010 32-pin CAT28F010 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1023 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current


    Original     		BS62LV1023 BS62LV1023SC BS62LV1023TC BS62LV1023STC BS62LV1023PC BS62LV1023JC BS62LV1023DC BS62LV1023SI BS62LV1023TI BS62LV1023STI PDF

    ac 1084

    Abstract: No abstract text available
    Text: H EE GEN FR ALO CAT28F512 Licensed Intel second source 512K-Bit CMOS Flash Memory LE A D F R E ETM FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase


    Original     		CAT28F512 512K-Bit 32-pin ac 1084 PDF

    28C010

    Abstract: 28c010-15 1N914 CAT28C010
    Text: Advanced Information CAT28C010 128K x 8 1024K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120 ns ■ Single 5V ■ Automatic Page Write Operation: ± 10% Supply –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: ■ End of Write Detection:


    Original     		CAT28C010 1024K-Bit 28C010 10mmx14mm) 8mmX20mm) 500/Reel 120ns 150ns 28C010 28c010-15 1N914 CAT28C010 PDF

    Untitled

    Abstract: No abstract text available
    Text: Licensed Intel second source CAT28F020 2 Megabit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 70/90/120 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase – Active: 30 mA max CMOS/TTL levels


    Original     		CAT28F020 32-pin 28F020 8mmx20mm) 500/Reel 120ns 28F020 CAT28F020NI-12T PDF

    Untitled

    Abstract: No abstract text available
    Text: CAT28F512 Licensed Intel second source 512K-Bit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels


    Original     		CAT28F512 512K-Bit 32-pin 28F512 8mmx20mm) 500/Reel 120ns 150ns PDF

    LY621024PL-70LL

    Abstract: LY621024PL
    Text:  LY621024 128K X 8 BIT LOW POWER CMOS SRAM Rev. 1.8 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Description Issue Date Initial Issue Jul.25.2004 Revised sym. b of 32 pin 450mil SOP package outline dimension Jan.17.2007


    Original     		LY621024 450mil LY621024GL-70LLE LY621024GL-70LLET LY621024GL-70LLI LY621024GL-70LLIT LY621024PL-70LL LY621024PL PDF

    BS62LV1023

    Abstract: BS62LV1023DC BS62LV1023JC BS62LV1023PC BS62LV1023SC BS62LV1023SI BS62LV1023STC BS62LV1023STI BS62LV1023TC BS62LV1023TI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ DESCRIPTION „ FEATURES • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current


    Original     		BS62LV1023 -40oC R0201-BS62LV1023 BS62LV1023 BS62LV1023DC BS62LV1023JC BS62LV1023PC BS62LV1023SC BS62LV1023SI BS62LV1023STC BS62LV1023STI BS62LV1023TC BS62LV1023TI PDF

    28C513

    Abstract: 28C512 CAT28C512 1N914 CAT28C513
    Text: H EE GEN FR ALO CAT28C512/513 512K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast Read Access Times: 120/150 ns ■ Automatic Page Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer ■ Low Power CMOS Dissipation: –Active: 50 mA Max.


    Original     		CAT28C512/513 512K-Bit CAT28C512r 28C513 28C512 CAT28C512 1N914 CAT28C513 PDF

    28F512

    Abstract: ac 1084 1N914 CAT28F512
    Text: H CAT28F512 EE GEN FR ALO 512K-Bit CMOS Flash Memory LE Licensed Intel second source A D F R E ETM FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase


    Original     		CAT28F512 512K-Bit 32-pin 28F512 ac 1084 1N914 CAT28F512 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX66X1024 mA. Super Low Power 128k x 8 CMOS SRAM DESCRIPTION FEATURES Ql Wide supply voltage range - CMOS Input level 0.8V cc/0.2Vcc 5.5V to 1.5V - TTL Input level (3V/0V) 4.5 V to 1.5 V Super low power consumption - 5V operation 60mA (Max.) write current


    OCR Scan     		70ns/100ns 200ns MX66X1024TRC DS0005 PDF

    Untitled

    Abstract: No abstract text available
    Text: mA FEATURES MX66U1024 Super Low Power 128k x 8 CMOS SRAM QJ Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc 5.5 V to 2V - TTL Input level (3V/0V) 4.5 V to 2V □ Super low power consumption - 5V operation 60mA (Max.) write current 20mA (Max.) read current


    OCR Scan     		70ns/100ns 200ns MX66U1024 32-Pin MX66U1024TC MX66U1024TRC S0004 PDF

    BS62LV2003

    Abstract: BS62LV2003SC BS62LV2003SI BS62LV2003STC BS62LV2003STI BS62LV2003TC BS62LV2003TI TSOP-32
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 8 bit BS62LV2003 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current


    Original     		BS62LV2003 100ns BS62LV2003 R0201-BS62LV2003 100ns -40oC BS62LV2003SC BS62LV2003SI BS62LV2003STC BS62LV2003STI BS62LV2003TC BS62LV2003TI TSOP-32 PDF

    BS62UV2001

    Abstract: BS62UV2001SC BS62UV2001SI BS62UV2001STC BS62UV2001STI BS62UV2001TC BS62UV2001TI
    Text: Preliminary Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit BSI BS62UV2001 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0V ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade : 15mA Max. operating current I- grade : 20mA (Max.) operating current


    Original     		BS62UV2001 120ns 150ns BS62UV2001 R0201-BS62UV2001 -40oC BS62UV2001SC BS62UV2001SI BS62UV2001STC BS62UV2001STI BS62UV2001TC BS62UV2001TI PDF

    CAT28LV64

    Abstract: 28LV64 28LV64-25
    Text: Preliminary CAT28LV64 Preliminary CAT28LV64 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6 V Supply ■ Commercial and Industrial Temperature Ranges ■ Read Access Times: ■ CMOS and TTL Compatible I/O – 250/300/350ns ■ Automatic Page Write Operation:


    Original     		CAT28LV64 64K-Bit 250/300/350ns CAT28LV64 300-T 28LV64 28LV64-25 PDF

    CAT28F010

    Abstract: 28F010-70 1N914 28F010-12 Nippon capacitors
    Text: CAT28F010 CAT28F010 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Tem- ■ Fast Read Access Time: 70/90/120 ns perature Ranges ■ Low Power CMOS Dissipation: ■ On-Chip Address and Data Latches


    Original     		CAT28F010 32-pin 300-T CAT28F010 28F010-70 1N914 28F010-12 Nippon capacitors PDF

    ac 1084

    Abstract: 28F512 CAT28F512 200 ns 1N914 CAT28F512
    Text: H CAT28F512 EE GEN FR ALO 512K-Bit CMOS Flash Memory LE Licensed Intel second source A D F R E ETM FEATURES • Commercial, Industrial and Automotive ■ Fast Read Access Time: 90/120/150 ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase


    Original     		CAT28F512 512K-Bit 32-pin ac 1084 28F512 CAT28F512 200 ns 1N914 CAT28F512 PDF

    MX29LV040C

    Abstract: MX29LV040CT2I-70G MX29LV040CTC-70G MX29LV040CQI-70G MX29LV040CQC-55Q architecture in 4289 MX29LV040 MX29LV040CQI-55Q MX29LV040CTI-70G 555H
    Text: MX29LV040C 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • • • • • • • • Extended single - supply voltage range 2.7V to 3.6V 524,288 x 8 only Single power supply operation - 3.0V only operation for read, erase and program operation


    Original     		MX29LV040C MX29LV040 55Q/70/90ns 64K-Byte MX29LV040C MX29LV040CT2I-70G MX29LV040CTC-70G MX29LV040CQI-70G MX29LV040CQC-55Q architecture in 4289 MX29LV040CQI-55Q MX29LV040CTI-70G 555H PDF

    R1LP0108ESA-7SR

    Abstract: No abstract text available
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


    Original     		R1LP0108E R10DS0151EJ0100 072-word 32-pin R1LP0108ESA-7SR PDF

    Untitled

    Abstract: No abstract text available
    Text: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher


    Original     		R1LP0108E R10DS0029EJ0300 072-word 32-pin PDF