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    8KX8 RAM Search Results

    8KX8 RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HM1-65642B/883 Renesas Electronics Corporation 8kx8 Asynchronous CMOS Static RAM Visit Renesas Electronics Corporation
    HM1-65642/883 Renesas Electronics Corporation 8kx8 Asynchronous CMOS Static RAM Visit Renesas Electronics Corporation
    HM1-65642-9 Renesas Electronics Corporation 8kx8 Asynchronous CMOS Static RAM Visit Renesas Electronics Corporation
    MD27C64-25 Rochester Electronics LLC UVPROM, 8KX8, 250ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-20 Rochester Electronics LLC UVPROM, 8KX8, 200ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy

    8KX8 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN


    Original     		PDF LH5164AN

    IS61SP25636

    Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
    Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B


    Original     		PDF 32Kx8 32Kx16 128Kx8 64Kx16 128Kx16 IS61C64B IS61C256AH IS61C3216 IS61C3216B IS61SP25636 s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64

    FM3130-G

    Abstract: FM3130-GTR FM3130 FM3130G 4558 bcd
    Text: FM3130 Integrated RTC/Alarm and 64Kb F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory  Real-time Clock RTC with Alarm  Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM  Internally Organized as 8Kx8


    Original     		PDF FM3130 FM3164. FM3130-G FM3130-GTR FM3130 FM3130G 4558 bcd

    FM3130

    Abstract: No abstract text available
    Text: FM3130 Integrated RTC/Alarm and 64Kb F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory  Real-time Clock RTC with Alarm  Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM  Internally Organized as 8Kx8


    Original     		PDF FM3130 FM3164. FM3130

    FM3130

    Abstract: FM3130-G RIC0624 TST 7595
    Text: Preliminary FM3130 Integrated RTC/Alarm and 64Kb FRAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC with Alarm • Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM • Internally Organized as 8Kx8


    Original     		PDF FM3130 FM3130 FM3130, FM3130-G RIC0624 TST 7595

    TC5564

    Abstract: 2064 ram Static RAM 2064 8KX8-01 8KX8-03
    Text: CMOS 8KX8-01 CMOS 8KX8-03 64K CMOS STATIC RAM 8,192 WORD X 8 BIT In tegrated C irc u its In c o rp o ra te d S c rs s 206 882-3100 TWX 910-443-2302 integrated circuits incorporated FEATURES: □ □ □ □ □ □ □ □ The CMOS 8KX8-0X series of CMOS S ta tic RAMs


    OCR Scan     		PDF 8KX8-01 8KX8-03 100ns MIL-STD-883C. TC5564 2064 ram Static RAM 2064 8KX8-01 8KX8-03

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8810H/L Electronic D e s ig n s In o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic •lOiDi Features The EDI8810H/L is a 65,653bit, 6 transistor cell 8Kx8 bit C M O S Static Random A c ce ss Memory C M O S Static R A M organized a s 8Kx8.


    OCR Scan     		PDF EDI8810H/L EDI8810H/L 653bit,

    EDI8808CB

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883, D02VSS A0-A12

    Untitled

    Abstract: No abstract text available
    Text: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package


    OCR Scan     		PDF bq431OY bq4310Y 28-pin, 330-mil 4833YPD bg4310YSH- bq48SH

    transistor D883

    Abstract: EDI8810HL e255 8KX8-Bit CMOS SRAM
    Text: ^EDI _ EDI8810H/L Electronic D e sig n s I n o * Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic iUMDN Features The EDI8810H/L is a 65,653bit, 6 transistor cell CMOS Static RAM organized as 8Kx8. It is available in both standard H and low power (L)


    OCR Scan     		PDF EDI8810HL EDI8810H/L 653bit, transistor D883 EDI8810HL e255 8KX8-Bit CMOS SRAM

    EDI8808CB

    Abstract: C323 64K 8KX8 CMOS SRAM sram 8kx8
    Text: ^EDI _ EDI8808CB E le ctro n ic D « d g ru Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Static RAM organized as 8Kx8. Ali inputs and outputs are TTL compatible and allow


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883, A0-A12 C323 64K 8KX8 CMOS SRAM sram 8kx8

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)


    OCR Scan     		PDF EDI8810H/L ecEDI8810H/L 8810H/L

    80C31 instruction set

    Abstract: BOC31 80C31 F800H MCS-51 80c31 application 685C31
    Text: '<Teï r er~>& EDH 685C31 EEPROM jjPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM 0> 005612 Features The EDH 685C31 ^PAK from EDI is a new series of high density microcomputer modules based on the industry-standard 80C31 single


    OCR Scan     		PDF 685C31 80C31 80C31, 685C31-8CMHR 685C31 -12CMH GU185RF 80C31 instruction set BOC31 F800H MCS-51 80c31 application

    UPAK

    Abstract: static ram 8KX8 sram 8kx8 memory map
    Text: pS. & • t<b EDH 685C31 ^E D I EEPROM |iPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM O 005612 6 L Features The EDH 685C31 pPAK from EDI is a new series of high density microcomputer modules


    OCR Scan     		PDF 685C31 80C31 685C31 80C31, on85C31-8CMHR 685C31-12CMHR UPAK static ram 8KX8 sram 8kx8 memory map

    1202z

    Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
    Text: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883


    OCR Scan     		PDF 5962-3829409MXA 5962-3829409MYC 5962-3829409MZA 5962-3829411MXA 5962-382941IMYC 2-3H29411MZA 5962-3829413MX 5962-3829413MYC 5962-3829413MZA 5962-3829415MYC 1202z MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3

    Untitled

    Abstract: No abstract text available
    Text: High Performance 8Kx8 CMOS SRAM II AS7C164 AS7C164L 8Kx8 CMOS SRAM Common I/O \F E A T U R E S • Organization: 8,192 words x 8 bits • Easy Memory Expansion with CE1, CE2 and OE Options • High Speed: 12/15/20/25 ns Address access time 3,4,5,6 ns Output Enable access time


    OCR Scan     		PDF AS7C164 AS7C164L 605mW 300mil

    SRM2064

    Abstract: Static RAM 2064
    Text: IK s l I In te gra te d C irc u its In co rp o ra te d 10301 W illo w s Road Redm ond, WA 98052 206 882-3100 TW X 910-443-2302 CMOS 8KX8-01 CMOS 8KX8-03 •/■ a ^ * i a ■ ■ 64K CMOS STATIC RAM g -JQ2 VVORD X 8 BIT a m FEATURES: □ Monolithic Design


    OCR Scan     		PDF 8KX8-01 8KX8-03 100ns SRM2064 Static RAM 2064

    TC5564

    Abstract: 8KX8-01 srm2064 8KX8-03
    Text: Iksi i CMOS 8KX8-01 CMOS 8KX8-03 ^ n a •■ 64K CMOS STATIC RAM g -J 02 VVORD X 8 BIT In tegrated C irc u its In co rp o ra te d 10301 W i I lo w s R o a d m R edm ond, WA 98052 206 882-3100 TW X 910-443-2302 - f c . - FEATURES: □ □ □ □ □ □


    OCR Scan     		PDF 8KX8-01 8KX8-03 100ns TC5564 8KX8-01 srm2064 8KX8-03

    8kx8 RAM

    Abstract: real time clock calendar bq3485
    Text: h Advance Information BENCHMARQ Real-Time Clock RTC With 8Kx8 RAM General Description Features >- Direct clock/calendar replacement for IBM AT-compatible computers and other applications >• Density upgrade of the bq3385R >• 160 ns cycle time allows fast bus


    OCR Scan     		PDF bq3485 bq3385R 24-hour g3485 8kx8 RAM real time clock calendar bq3485

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin bq4010YMA-85N -150N. bq4010

    AAA1M304

    Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
    Text: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188


    OCR Scan     		PDF CY7C106 CY7C185 AS7C1028 AS7C164 AS7C259 AS7C256 AS7C1024 AAA1M304 tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A

    A3738

    Abstract: CA1023 8kx8 sram
    Text: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns


    OCR Scan     		PDF EDI8808CB EDI8808CB 536bit, D02VSS 0-A12 A3738 CA1023 8kx8 sram

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF 4010/b bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns