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    8F TRANSISTORS Search Results

    8F TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    8F TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    motorola AN938

    Abstract: motorola gm 900 317D-01 AN938 MHW2000 MHW2001 MHW2002 capacitor iesa
    Text: Order this data sheet by MHW2000/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8F& Product Preview Monolithic RF MHW2000 MHW2001 MHW20Q2‘. 8’ ‘ pw -r Three-stage silicon monolithic RF amplifier designed primarily for land-mobile radio transmitter exciters. Biasing networks and interstate dc blocks are included on-chip. All


    Original     		PDF MHW2000/D MHW2000 MHW2001 MHW20Q2 MK145BP, MHW2002 motorola AN938 motorola gm 900 317D-01 AN938 MHW2000 MHW2001 MHW2002 capacitor iesa

    5652

    Abstract: XC6210 XCM406
    Text: 8F Sakura Nihonbashi Bldg., 1-13-12, Nihonbashikayaba-cho, Chuo-ku, Tokyo 103-0025 Japan Tel: +81-3-5652-8700 Fax: +81-3-5652-8701 PRESS RELEASE ＴＲＸ040 September 9, 2008 XCM406 Series 2 Channel Output Large Current High Speed LDO Regulator TOREX SEMICONDUCTOR LTD. Tokyo, Japan: President, Tomoyuki Fujisaka announces the release of


    Original     		PDF XCM406 XC6210 USP-12B01 100mA 700mA USP-12B01 USP-12B012 5652

    8F sot23

    Abstract: No abstract text available
    Text: MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3 Digital Transistors BRT R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3 SC-59plicable DTC143T/D 8F sot23

    marking 8F

    Abstract: marking A8F NSBC143TF3 8F sot23
    Text: MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3 Digital Transistors BRT R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


    Original     		PDF MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3 DTC143T/D marking 8F marking A8F 8F sot23

    8F sot23

    Abstract: DTA143TN3 DTC143TN3 B8FS
    Text: Spec. No. : C369N3 Issued Date : 2002.06.01 Revised Date : 2002. 11.02 Page No. : 1/3 CYStech Electronics Corp. General Purpose NPN Digital Transistors Built-in Resistor DTC143TN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		PDF C369N3 DTC143TN3 DTA143TN3 OT-23 UL94V-0 8F sot23 DTA143TN3 DTC143TN3 B8FS

    fe marking code sc70

    Abstract: LMUN52xxT1G 8k sot 23 marking MARKING CODE 21 SC70 8F marking sot-323 NPN TRANSISTOR SC-70 8k sc70 marking LMUN5211T1G LMUN5212T1G LMUN5213T1G
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN52xxT1G SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LMUN52xxT1G 70/SOT LMUN52xxT1G SC-70 OT-323 fe marking code sc70 8k sot 23 marking MARKING CODE 21 SC70 8F marking sot-323 NPN TRANSISTOR SC-70 8k sc70 marking LMUN5211T1G LMUN5212T1G LMUN5213T1G

    transistor marking PB

    Abstract: LMUN5211T1 LMUN5212T1 marking code 24 sot-323 LMUN5211T1G LMUN5212T1G LMUN5213T1 LMUN5213T1G LMUN5214T1 LMUN5214T1G
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LMUN5211T1 70/SOT LMUN5211T1 SC-70 OT-323 Series-10/10 transistor marking PB LMUN5212T1 marking code 24 sot-323 LMUN5211T1G LMUN5212T1G LMUN5213T1 LMUN5213T1G LMUN5214T1 LMUN5214T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5211T1G Series NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LMUN5211T1G 70/SOTâ LMUN5211T1G SC-70 OT-323

    LMUN5211T1G

    Abstract: marking 8C TRANSISTOR SOD MARKING CODE NG LMUN5212T1G LMUN5213T1G LMUN5214T1G 8k sot 23 marking
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5211T1G SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LMUN5211T1G 70/SOT 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner LMUN5211T1G marking 8C TRANSISTOR SOD MARKING CODE NG LMUN5212T1G LMUN5213T1G LMUN5214T1G 8k sot 23 marking

    DTC143TS3

    Abstract: DTC143 DTA143TS3
    Text: Spec. No. : C369S3 Issued Date : 2002.06.01 Revised Date : 2002. 11.02 Page No. : 1/3 CYStech Electronics Corp. General Purpose NPN Digital Transistors Built-in Resistors DTC143TS3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		PDF C369S3 DTC143TS3 DTA143TS3 OT-323 UL94V-0 DTC143TS3 DTC143 DTA143TS3

    DTC115EET1G

    Abstract: DTC144EET1G DTC114EET1 DTC114EET1G DTC114YET1 DTC114YET1G DTC124EET1 DTC124EET1G DTC144EET1 DTC123JET1G
    Text: DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF DTC114EET1 SC-75/SOT-416 DTC114EET1/D DTC115EET1G DTC144EET1G DTC114EET1G DTC114YET1 DTC114YET1G DTC124EET1 DTC124EET1G DTC144EET1 DTC123JET1G

    MUN5214T1

    Abstract: MARKING MP SOT-323 SOT-323 8P marking code MS SOT323 NPN TRANSISTOR SC-70 MUN5211T1 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1
    Text: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF MUN5211T1 SC-70/SOT-323 MUN5211T1/D MUN5214T1 MARKING MP SOT-323 SOT-323 8P marking code MS SOT323 NPN TRANSISTOR SC-70 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1

    MUN5214T1

    Abstract: c403c MUN5211T1 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1 MUN5213T1G MUN5214T1G
    Text: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF MUN5211T1 SC-70/SOT-323 MUN5211T1/D MUN5214T1 c403c MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1 MUN5213T1G MUN5214T1G

    321L

    Abstract: UNR3210 UNR321N UNR3213 UNR3216 UNR321L
    Text: Transistors with built-in Resistor UNR3210/3213/3216/321L/321N Silicon NPN epitaxial planar transistor Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • Optimum for downsizing of the equipment and high-density mounting


    Original     		PDF UNR3210/3213/3216/321L/321N UNR3210 UNR3213 UNR3216 UNR321L 321L UNR3210 UNR321N UNR3213 UNR3216

    sot-89 Marking 8D

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5211T1G SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LMUN5211T1G 70/SOTâ sot-89 Marking 8D

    SOT 363 marking code 62 low noise

    Abstract: bf362 bc238c
    Text: ,TELEFUNKEN ELECTRONIC file D fiRBOO^b Q00S201 2 • ALÛÛ ■ r - s t - z . } BF 362 • BF 363 TTEHLtHFODKlGStiMelectronic Creative Technologies Silicon NPN RF Planar Transistors Applications: BF 362: Gain controlled UHF/VHF Input stages 8F 363: Self oscillating mixer stages


    OCR Scan     		PDF Q00S201 569-GS SOT 363 marking code 62 low noise bf362 bc238c

    MD918

    Abstract: MD918A K 1170 MD918F MD918B MD918BF
    Text: MD918, A, B silicon MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed fo r use as d ifferential amplifiers, dual high frequency amplifiers, fro n t end detectors and temperature compensation applications.


    OCR Scan     		PDF MD918, MD918F, MD918 MD918F MD918A K 1170 MD918B MD918BF

    Untitled

    Abstract: No abstract text available
    Text: Il J «ram m Ê M ic r o s e m C o m m e r c e D r iv e ^ i S D 101 9 fàirÿti&x t'i’y.wy.'Sby T x« o w ^ RF & MICROWAVE TRANSISTORS 108.,.1 52MHz APPLICATIONS » » • « * C LA S S G T R A N S IS T O R F K fcQ U fe N C y 136M H 2 VO LTAG E 23 v' POW ER O U T


    OCR Scan     		PDF 52MHz S004LSrtiià -14AW

    5N20

    Abstract: c306 diode sefp5n20 5n18 SEFM5N18
    Text: S Îf I G S-THOMSON 0 7 E D I 7^51 237 Q'QlflGfiL 1 , ' | î 73C SEFM5N18 SEFM5N20 SEFP5NI8 17583 SEFP5N20 : N -C H A N E L POW ER M O S TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		PDF SEFM5N18 SEFM5N20 SEFP5N20 80V/200V 300jws, 5N20 c306 diode sefp5n20 5n18

    SC2335

    Abstract: SE 130 13007k SC5024 SC5030 E13008 sc536 5027 to-220 se to220 KSC5027
    Text: TRANSISTORS FUNCTION GUIDE 2.3. Switching Transistors 2.3.1 TO-126, TO-220 & T 0 -3 P Type Tran sistors Condition vCE Ic A (V) (A) M IN 4 K SE 130 04 5 2 8 K SE 130 06 5 12 K S E 13008 375 0.5 400 0.5 300 450 500 800 ic Condition hFE Device (NPN) VcEO (V)


    OCR Scan     		PDF O-126, O-220 O-220F -220F SC2335 SE 130 13007k SC5024 SC5030 E13008 sc536 5027 to-220 se to220 KSC5027

    2SC2872

    Abstract: 7270 ic 2SC2872S 480M 640M
    Text: ROHM CO L T D 40E WBk 7 0 2 0 = ^ D b 7 > y Z £ /Transistors D QGS 73 S 4 HIR HM 2SC2872/2SC2872S T ' - ’l i - O ' 2 S C 2 S 7 2 j v 'jn > ‘t ’ f C ^ i i ' Ü f f l / M f E p ita x ia l • e d iu m P la n a r P o w e r N P N S ilic o n A m p . T r a n s is to r s


    OCR Scan     		PDF 2SC2872S 100mA/1 400mA/40mA) 100mA/10mA) 00GS735 2SC2872/2SC2872S 2SC2872 SC-43 2SC2872 7270 ic 2SC2872S 480M 640M

    TCA 875

    Abstract: BUY72
    Text: BUY 55, BUY 56, BUY 72 NPN Triple-diffused silicon power transistors BUY 55, BUY 56 and BUY 72 are triple-diffused NPN silicon power transistors in the case 3 A 2 DIN 41 872 TO-3 . The collector is electrically connected to the case. The transistors are designed for general switching applications at higher outputs.


    OCR Scan     		PDF Q62702- Q62901 B11-A Q62901- TCA 875 BUY72

    a1764

    Abstract: 2SA1815 J2SK242 A1607 DS-17 SANYO
    Text: SANYO MCP Mini C h i p Pack Transistors The package of Sanyo MCP (Mini Chip Pack) transistors is made so small-sized as approximately 2/3 of the CP package heretofore in use, permitting MCP transistor-applied sets to be made smaller, ate V t a t - y h i g h


    OCR Scan     		PDF 2SA1688 2SA1857 2SC4399 2SC4400 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC440fi a1764 2SA1815 J2SK242 A1607 DS-17 SANYO

    18af

    Abstract: BUT10AF but18a BUT18AF BUT18
    Text: Product specification Philips Semiconductors Silicon diffused power transistors BUT18F; BUT18AF PINNING DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN APPLICATIONS


    OCR Scan     		PDF OT186 BUT18F; BUT18AF BUT18F BUT18AF 18af BUT10AF but18a BUT18