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    8E SOT89 Search Results

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    MARK 8E diode

    Abstract: SOT89 MARKING 8E KIA78L09F 8E sot-89 mark 8E 8e sot89 sot89 8e sot-89 SOT-89 marking 8e marking 4 SOT89
    Text: SEMICONDUCTOR KIA78L09F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 E 1 314 2. Marking 2 Item Marking Description Device Mark 8E KIA78L09F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.


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    PDF KIA78L09F OT-89 MARK 8E diode SOT89 MARKING 8E KIA78L09F 8E sot-89 mark 8E 8e sot89 sot89 8e sot-89 SOT-89 marking 8e marking 4 SOT89

    SP78L05

    Abstract: 33PF SP78L12 SP78LXX "3-Terminal Positive Voltage Regulator" 3-pin switching high voltage sot89-3
    Text: SP78LXX Solved by TM 100mA 3-Terminal Positive Voltage Regulator SOT-8 Package Features g Output Current up to 100 mA g Fixed Output Voltage of 5V and 12V g Output Voltage Tolerances of f5% over the Full Temperature Range g Internal Short Circuit Current-Limiting


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    PDF SP78LXX 100mA SP78LXX OT-223 500/TR SP78L05M4-L/TR OT-89 000/TR SP78L12M4-L/TR SP78L05 33PF SP78L12 "3-Terminal Positive Voltage Regulator" 3-pin switching high voltage sot89-3

    marking 8E sot-89

    Abstract: 8e sot89 sot89 8e 855 marking sot89 17 SOT-89 marking 8e 44 sot89 SOT89 MARKING 8E marking 36 sot-89
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 THREE TERMINAL POSITIVE VOLTAGE REGULATORS 9V FH78L09 +9V 三端稳压器 SOT-89 FEATURES • Best Suited to Power Supply for TTL, C2-MOS


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    PDF OT-89 FH78L09 100mA OT-89 0mAIOUT70mA 5VVIN23V 12VVIN23V 0mAIOUT100mA 0mAIOUT40mA marking 8E sot-89 8e sot89 sot89 8e 855 marking sot89 17 SOT-89 marking 8e 44 sot89 SOT89 MARKING 8E marking 36 sot-89

    sod87 dimension

    Abstract: BAV45 SOD80 sod80 dimension sod87 dimension datasheet SC59 SO20 MSB301 MSB302 BZA100
    Text: SECTION 18 PACKING AND PACKING QUANTITIES contents page SCOPE 18 - 2 SURFACE-MOUNT DEVICES 18 - 2 Tape specification 18 - 2 Reel specification 18 - 7 Packing quantities 18 - 8 LEADED DEVICES Axial diodes 18 - 9 18 - 9 Tape specification 18 - 9 Reel specification


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    PDF OD83A OD88A OT18/15 BAV45 sod87 dimension SOD80 sod80 dimension sod87 dimension datasheet SC59 SO20 MSB301 MSB302 BZA100

    seiko 100 s chip

    Abstract: S-8323 S-8323A25MC-ELF-T2 S-8323A27MC-ELH-T2 S-8323A30MC-ELK-T2 S-8323A33MC-ELN-T2 S-8323A50MC-EME-T2 S-8327 RB300
    Text: Contents Features . 1 Applications . 1 Block Diagram . 1 Selection Guide . 2


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    PDF S-8322 S-8327/8) 11S8323001 seiko 100 s chip S-8323 S-8323A25MC-ELF-T2 S-8323A27MC-ELH-T2 S-8323A30MC-ELK-T2 S-8323A33MC-ELN-T2 S-8323A50MC-EME-T2 S-8327 RB300

    8A SOT-89

    Abstract: 8E sot-89 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-25 XC6368A332MR XC6371B301 XC6372E501P XC6372A301PR
    Text: 1/2 S T E P - U P P W M S W I T C H I N G R E G U L AT O R S XC6367, XC6368, XC6371, XC6372, XC6373 SERIES • A DIVERSE RANGE OF SWITCHING REGULATORS WITH OUTPUT VOLTAGES AVAILABLE FROM 1.5V TO 7.0V IN 0.1V INCREMENTS, AND 6 OSCILLATOR FREQUENCIES: 30KHz, 50KHz, 100KHz, 180KHz,


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    PDF XC6367, XC6368, XC6371, XC6372, XC6373 30KHz, 50KHz, 100KHz, 180KHz, 300KHz 8A SOT-89 8E sot-89 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-25 XC6368A332MR XC6371B301 XC6372E501P XC6372A301PR

    TN200T

    Abstract: S-8324 8328B t 8328 S-8324A27MC-EOH-T2 S-8324A30MC-EOK-T2 S-8324A33MC-EON-T2 S-8324A50MC-EPE-T2 S-8328 MIDORI
    Text: Contents Features . 1 Applications . 1 Block Diagram . 1 Selection Guide . 2


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    PDF S-8322 S-8327/8) 11S8323001 TN200T S-8324 8328B t 8328 S-8324A27MC-EOH-T2 S-8324A30MC-EOK-T2 S-8324A33MC-EON-T2 S-8324A50MC-EPE-T2 S-8328 MIDORI

    TGF2021-04-SD

    Abstract: No abstract text available
    Text: TGF2021-04-SD DC-4 GHz Packaged Power pHEMT Key Features • • 900 MHz Low Noise Application Board Performance Bias conditions: Vd = 5 V, Idq = 150 mA, Vg = -0.8 V Typical Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board


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    PDF TGF2021-04-SD TGF2021-04-SD TGF2021-04-SD-T/R OT-89,

    Untitled

    Abstract: No abstract text available
    Text: TGF2021-04-SD DC-4 GHz Packaged Power pHEMT Key Features • • 900 MHz Low Noise Application Board Performance Bias conditions: Vd = 5 V, Idq = 150 mA, Vg = -0.8 V Typical Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board


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    PDF TGF2021-04-SD TGF2021-04-SD OT-89, TGF2021-04-SD-T/R

    08052U270GAT2A

    Abstract: TGF2021-04-SD 08052U2R7BAT2A 08052U3R3BAT2A 08052U4R7CAT2A
    Text: TGF2021-04-SD DC-4 GHz Packaged Power pHEMT Key Features • • 900 MHz Low Noise Application Board Performance Bias conditions: Vd = 5 V, Idq = 150 mA, Vg = -0.8 V Typical Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board


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    PDF TGF2021-04-SD 26dBm TGF2021-04-SD OT-89, TGF2021-04-SD-T/R 08052U270GAT2A 08052U2R7BAT2A 08052U3R3BAT2A 08052U4R7CAT2A

    TGF2021-04-SD

    Abstract: 51923 31669 SD 1083 08052U270GAT2A 08052U2R7BAT2A 08052U3R3BAT2A 08052U4R7CAT2A TriQuint SOT-89 TAPE AND REEL L0805220JESTR
    Text: TGF2021-04-SD DC-4 GHz Packaged Power pHEMT Key Features • • 900 MHz Low Noise Application Board Performance Bias conditions: Vd = 5 V, Idq = 150 mA, Vg = -0.8 V Typical Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board


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    PDF TGF2021-04-SD TGF2021-04-SD OT-89, TGF2021-04-SD-T/R 51923 31669 SD 1083 08052U270GAT2A 08052U2R7BAT2A 08052U3R3BAT2A 08052U4R7CAT2A TriQuint SOT-89 TAPE AND REEL L0805220JESTR

    Untitled

    Abstract: No abstract text available
    Text: ML61 ML61 Series Positive Voltage Detector1 1 122345674891 2 2 2 2 2 1 BC67DECF1 1 3 Memory Battery Back-up Circuits Microprocessor Reset Circuitry Power Failure Detection Power-on Reset Circuit System Battery Life and Charge Voltage Monitor 3 3 3 3 A CMOS Low Power Consumption : Typical 1.0uAat


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    PDF BC67DECF1 150mW) 500mW) 300mW) C9CE63A CF5E4274891 2341567819A1B1CDEF 139C3 1B139C3 P13/13

    78L05B

    Abstract: ST 78L05B 78L33 78L33A 78l33b marking 8A sot-89 78l33 regulator 78L05B st L78L33 regulator 78L24B
    Text: L78LxxAB, L78LxxAC, L78LxxC Positive voltage regulators Datasheet — production data Features • Output current up to 100 mA ■ Output voltages of 3.3; 5; 6; 8; 9; 10; 12; 15; 18; 24 V ■ Thermal overload protection ■ Short-circuit protection ■ No external components are required


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    PDF L78LxxAB, L78LxxAC, L78LxxC OT-89 L78Lxx 78L05B ST 78L05B 78L33 78L33A 78l33b marking 8A sot-89 78l33 regulator 78L05B st L78L33 regulator 78L24B

    sot-89 Marking 8D

    Abstract: MARKING 60 SOT-89 JD MARKING SOT-89 JD marking 8D SOT 89 sot-89 marking 837 sot-89 marking 8C marking 8a sot-89 8E sot-89 8D SOT 89 SOT89 MARKING 8E
    Text: ૹ߅࢟വ! JD! THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION & FEATURES ྯ࣡ᆮኹ໭ FH78LXX 概述及特點 The FH78LXX series of three terminal positive regulators is available with several fixed output voltages making them useful in a wide range of


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    PDF FH78LXX 100mA FH78LXX OT-89 0to125 120Hz, sot-89 Marking 8D MARKING 60 SOT-89 JD MARKING SOT-89 JD marking 8D SOT 89 sot-89 marking 837 sot-89 marking 8C marking 8a sot-89 8E sot-89 8D SOT 89 SOT89 MARKING 8E

    78L33A

    Abstract: SOT89 marking 828 L78L33ABD-TR
    Text: L78L Positive voltage regulators Datasheet - production data Description The L78L series of three-terminal positive regulators employ internal current limiting and thermal shutdown, making them essentially indestructible. If adequate heat-sink is provided,


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    PDF DocID2145 78L33A SOT89 marking 828 L78L33ABD-TR

    KIA78L05F

    Abstract: KIA78L*F sot-89 Marking 8D KIA78L12F KIA78L06F SOT89 marking 8a marking 8D SOT 89 KIA78L08 KIA78L20F KIA78L24F
    Text: SEMICONDUCTOR KIA78L05F~KIA78L24F TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5V, 6V, 8V, 9V, 10V, 12V, 15V, 18V, 20V, 24V. A C H G FEATURES J B E Best Suited to Power Supply for TTL, C2-MOS. No External Part Needed.


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    PDF KIA78L05F KIA78L24F 150mA KIA78L05F 100mA KIA78L*F sot-89 Marking 8D KIA78L12F KIA78L06F SOT89 marking 8a marking 8D SOT 89 KIA78L08 KIA78L20F KIA78L24F

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KIA78L05F~KIA78L24F TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5V, 6V, 8V, 9V, 10V, 12V, 15V, 18V, 20V, 24V. A C H G FEATURES J B E Best Suited to Power Supply for TTL, C2-MOS. No External Part Needed.


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    PDF KIA78L05F KIA78L24F 150mA KIA78L05F 100mA

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -JANUARY 1996 Q CO M PLEM ENTARY TYPE - BST15 PA RTM AKING DETAIL — AT2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT 'v'C BO 300 Collector-Em itter Voltage V CEO 250


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    PDF BST15 100uA, FMMTA42

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - JANUARY 1996 _ O FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH h FE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE BC868 NPN PARTMARKING DETAILS -


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    PDF BC868 BC869 BC869-25 BC869-16 -10Qjj -10mA* -10hA -100mA` BC869-25

    p96 sot89

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995_ O PARTM ARKIN G D ETA IL - P96 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM BO L Collector-Base Voltage VALUE UNIT V CBO -220 C ollector-Em itter Voltage v ceo -200 V V Em itter-Base Voltage


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    PDF -100hA -200V -10mA -250mA -25mA* -100mA p96 sot89

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 4 - JANUARY 1996 COMPLEMENTARY TYPE - PARTMARKING DETAIL - BCV28 EF ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VCBO 40 V ^CEO 30 V Em itter-Base Voltage V E BO 10 V Peak Pulse Current ' cm 800


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    PDF BCV28 100mA, 100pA, --10mA, 20MHz width-300 FMMT38A

    2SD999

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD999 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 999 is designed fo r audio frequency pow er a m p lifie r app lica tion, especially in H y b rid Integrated C ircuits. FEATURES PACKAGE DIMENSIONS • W orld Standard M inia tu re Package


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    PDF 2SD999 2SD999 2SB798

    EHP00

    Abstract: marking 2P
    Text: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings


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    PDF Q68000-A8330 OT-89 EHP00 marking 2P

    lem module ha

    Abstract: TT 80 SCR MODULE
    Text: POWEREX INC 1SE D • 75T4L21 G0G343? 1 ■ W IMEREX CM420455 CM420855 925-7272 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 Powere» Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 SCR/Diode POW-R-BLOICMModules


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    PDF 75T4L21 G0G343? 1S697 BP107 CM420455 CM420855 peres/400-800 CM420455, CM420855 Amperes/400-800 lem module ha TT 80 SCR MODULE