88a diode
Abstract: SC88-A
Text: CHENMKO ENTERPRISE CO.,LTD CHN1NPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 25 mAmpere APPLICATION * Ultra high speed switching FEATURE SC-88A/SOT353 * Small surface mounting type. SC-88A/SOT353 * Multiple diodes in one small surface mount package.
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SC-88A/SOT353
SC-88A/SOT353)
150mW.
100oC
88a diode
SC88-A
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MMBD4448HDQWKGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD MMBD4448HDQWKGP SURFACE MOUNT SWITCHING DIODE ARRAY VOLTAGE 80 Volts CURRENT 250 mAmpere APPLICATION * Fast high speed switching FEATURE SC-88A/SOT-353 * Small surface mounting type. SC-88A/SOT-353 * High speed. (TRR=4.0nSec Max.)
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MMBD4448HDQWKGP
SC-88A/SOT-353
SC-88A/SOT-353)
MMBD4448HDQWKGP
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MMBD4448HCQWKGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD MMBD4448HCQWKGP SURFACE MOUNT SWITCHING DIODE ARRAY VOLTAGE 80 Volts CURRENT 250 mAmpere APPLICATION * Fast high speed switching FEATURE SC-88A/SOT-353 * Small surface mounting type. SC-88A/SOT-353 * High speed. (TRR=4.0nSec Max.)
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MMBD4448HCQWKGP
SC-88A/SOT-353
SC-88A/SOT-353)
MMBD4448HCQWKGP
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CHP1NGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHP1NGP SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 25 mAmpere APPLICATION * Ultra high speed switching FEATURE SC-88A/SOT-353 * Small surface mounting type. SC-88A/SOT-353 * Multiple diodes in one small surface mount package.
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SC-88A/SOT-353
SC-88A/SOT-353)
150mW.
100oC
CHP1NGP
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CHN1NGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHN1NGP SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 25 mAmpere APPLICATION * Ultra high speed switching FEATURE SC-88A/SOT353 * Small surface mounting type. SC-88A/SOT353 * Multiple diodes in one small surface mount package.
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SC-88A/SOT353
SC-88A/SOT353)
150mW.
100oC
CHN1NGP
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SOT-353
Abstract: marking 88a
Text: CHENMKO ENTERPRISE CO.,LTD CHP1NPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 25 mAmpere APPLICATION * Ultra high speed switching FEATURE SC-88A/SOT-353 * Small surface mounting type. SC-88A/SOT-353 * Multiple diodes in one small surface mount package.
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SC-88A/SOT-353
SC-88A/SOT-353)
150mW.
SC-88A/SOT353
100oC
SOT-353
marking 88a
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JS SOT23-3
Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
JS SOT23-3
sot23 marking JR
BAS20LT1
BAS21
BAS21DW5T1
BAS21LT1
BAS19
BAS19LT1
BAS20
MARKING JS sot-23
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Zener diode smd marking U4
Abstract: Zener diode smd marking T6 zener marking code u3 t3 smd diode marking code u9 3DB2 Zener diode smd marking T4 UG 74 a smd diode marking code ug smd diode marking U1 Zener diode smd marking T4 TN
Text: PZUxDB2 series Dual Zener diodes Rev. 01 — 31 March 2008 Product data sheet 1. Product profile 1.1 General description Dual isolated general-purpose Zener diodes in SOT353 SC-88A very small Surface-Mounted Device (SMD) standard plastic and dark-green plastic packages.
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OT353
SC-88A)
AEC-Q101
Zener diode smd marking U4
Zener diode smd marking T6
zener marking code u3 t3
smd diode marking code u9
3DB2
Zener diode smd marking T4
UG 74 a
smd diode marking code ug
smd diode marking U1
Zener diode smd marking T4 TN
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CHM3413KGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM3413KGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88A/SOT-353 FEATURE
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CHM3413KGP
SC-88A/SOT-353
SC-88A
CHM3413KGP
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Untitled
Abstract: No abstract text available
Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFT88N30P IXFH88N30P IXFK88N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFT88N30P
IXFH88N30P
IXFK88N30P
200ns
O-268
IXFT88N30P
88N30P
1-18-09-A
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GE88L02
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GE88L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 88A Description The GE88L02 provide the designer with the best combination of fast switching, ruggedized device design, low
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GE88L02
GE88L02
O-220)
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88N30
Abstract: IXFH88N30P 88N30P IXFK88N30P diode 300v IXFT88N30P
Text: IXFT88N30P IXFH88N30P IXFK88N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFT88N30P
IXFH88N30P
IXFK88N30P
200ns
O-268
IXFT88N30P
88N30P
1-18-09-A
88N30
IXFH88N30P
IXFK88N30P
diode 300v
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PSSI2021SAY
Abstract: 006aaa024 PDTC124XU PSSI2021 RESISTOR FOOTPRINT 0617
Text: PSSI2021SAY Constant current source in SOT353 package Rev. 02 — 20 October 2004 Product data sheet 1. Product profile 1.1 General description Resistor-equipped PNP transistor with two diodes on one chip in a SOT353 SC-88A plastic package. Stabilized output current of between 15 µA and 50 mA by connection of
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PSSI2021SAY
OT353
OT353
SC-88A)
PSSI2021SAY
006aaa024
PDTC124XU
PSSI2021
RESISTOR FOOTPRINT 0617
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GU88L02
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GU88L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 88A Description The GU88L02 provide the designer with the best combination of fast switching, ruggedized device design, low
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GU88L02
GU88L02
O-263
10eserved.
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Untitled
Abstract: No abstract text available
Text: APT30M30JLL 88A 0.030Ω 300V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT30M30JLL
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PSSI2021SAY
Abstract: SOT353-1 thermal resistance
Text: PSSI2021SAY Constant current source in SOT353 package Rev. 03 — 27 August 2009 Product data sheet 1. Product profile 1.1 General description Resistor-equipped PNP transistor with two diodes on one chip in a SOT353 SC-88A plastic package. Stabilized output current of between 15 µA and 50 mA by connection of
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PSSI2021SAY
OT353
OT353
SC-88A)
PSSI2021SAY
SOT353-1 thermal resistance
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GJ88L02
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GJ88L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 88A Description The GJ88L02 provide the designer with the best combination of fast switching, ruggedized device design, low
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GJ88L02
GJ88L02
O-252
O-252
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Untitled
Abstract: No abstract text available
Text: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBD1701
MMBD1703
MMBD1704
MMBD1705
OT-23
MMBD1701A
MMBD1703A
MMBD1704A
MMBD1705A
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diode 88A
Abstract: 88a diode and/kvp 88a
Text: APT30M30JFLL 300V POWER MOS 7 R 0.030Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT30M30JFLL
OT-227
diode 88A
88a diode
and/kvp 88a
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MMBD1701
Abstract: MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 a1705 marking 05 SOT 89
Text: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBD1701
MMBD1703
MMBD1704
MMBD1705
OT-23
MMBD1701A
MMBD1703A
MMBD1704A
MMBD1705A
MMBD1701
MMBD1701A
MMBD1703
MMBD1703A
MMBD1704
MMBD1705
a1705
marking 05 SOT 89
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APT50M38JFLL
Abstract: No abstract text available
Text: APT50M38JFLL 500V R POWER MOS 7 0.038Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M38JFLL
APT50M38JFLL
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diode 88A
Abstract: No abstract text available
Text: APT50M38JFLL 500V POWER MOS 7 R 0.038Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M38JFLL
OT-227
diode 88A
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APT50M38JLL
Abstract: No abstract text available
Text: APT50M38JLL 500V 88A 0.038Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M38JLL
OT-227
APT50M38JLL
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do-205aa
Abstract: ana 650 DAD 1000 1N3288 1N3288A 1N3289A 24UNF N3291 N3295A N-329
Text: Data Sheet No. PD-2.184 INTERNATIONAL RECTIFIER I« R 1 N3S8B, 1 N 3S 88A SERIES 1OO Amp Avg Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics 1N3288 100* lF A V @ Max. Tc IFSM @ 50 Hz @ 60 Hz l 2t @50 Hz @ 60 Hz i2 v n
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1IM32BB,
N3S88A
1N3288
1N3288A
22r000
D-6380
do-205aa
ana 650
DAD 1000
1N3289A
24UNF
N3291
N3295A
N-329
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