K d998 transistor
Abstract: lz 02 1068 D844 voltage regulator
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
K d998 transistor
lz 02 1068
D844 voltage regulator
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Untitled
Abstract: No abstract text available
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
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Untitled
Abstract: No abstract text available
Text: M58LW032A 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations – VDDQ = 1.8V to VDD for I/O Buffers
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M58LW032A
TSOP56
56MHz
90/25ns
110/25ns
110ns.
TBGA64
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w16 72
Abstract: DES Encryption TMS320
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
w16 72
DES Encryption TMS320
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D844 voltage regulator
Abstract: 9427h 9216h
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
D844 voltage regulator
9427h
9216h
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d2f3
Abstract: EG20T delta dps 298 cp 2A DSCA 114 communication board B43200 MSI 7680 Ver 5.1 Intel ATX smps circuit diagram Intel Atom E6xx SMPS 666 VER 2.3
Text: Intel Platform Controller Hub EG20T Datasheet January 2011 Order Number: 324211-003US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS
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EG20T
324211-003US
EG20T
EG20T--Ballout
d2f3
delta dps 298 cp 2A
DSCA 114 communication board
B43200
MSI 7680 Ver 5.1
Intel ATX smps circuit diagram
Intel Atom E6xx
SMPS 666 VER 2.3
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Untitled
Abstract: No abstract text available
Text: M58LW032A 32 Mbit 2Mb x16, Uniform Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
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M58LW032A
TSOP56
56MHz
90/25ns
TBGA64
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mmc 4050
Abstract: No abstract text available
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
mmc 4050
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D438 F28
Abstract: D844 voltage regulator D880 1408 9618H 7410 40E4 BE12h F21Ah 8e18h K D882 Y 139 codebook transistor
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
D438 F28
D844 voltage regulator
D880 1408
9618H
7410 40E4
BE12h
F21Ah
8e18h
K D882 Y 139
codebook transistor
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D880 TRANSISTOR
Abstract: c914 GSM modem M10 transistor D998 D880 D880 y D998 TRANSISTOR datasheet d998 transistor D992 d998
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
D880 TRANSISTOR
c914
GSM modem M10
transistor D998
D880
D880 y
D998 TRANSISTOR datasheet
d998 transistor
D992
d998
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28F320J3A
Abstract: AN1372 TSOP56 Same Functionality Pinout M58LW032A
Text: AN1372 APPLICATION NOTE How to Use M58LW032A as Replacement for 28F320J3A in an Asynchronous Environment CONTENTS • INTRODUCTION ■ ELECTRONIC SIGNATURE M58LW032A ■ POWER SUPPLY ■ PACKAGES and PINOUT/ BALLOUT COMPARISON ■ BLOCK ORGANIZATION ■
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AN1372
M58LW032A
28F320J3A
M58LW032A)
32Mbit
AN1372
TSOP56
Same Functionality Pinout
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D844 voltage regulator
Abstract: DES Encryption TMS320 tms320 sd D882 TRANSISTOR circuit example AA19 OMAP5912 GSM modem M10 d438 transistor AN 7818 voltage regulator K d998 transistor
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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Original
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
D844 voltage regulator
DES Encryption TMS320
tms320 sd
D882 TRANSISTOR circuit example
AA19
GSM modem M10
d438 transistor
AN 7818 voltage regulator
K d998 transistor
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D844 voltage regulator
Abstract: K d998 transistor j 5804 f11 9405h DES Encryption TMS320
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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Original
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
D844 voltage regulator
K d998 transistor
j 5804 f11
9405h
DES Encryption TMS320
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BE06
Abstract: CC08h
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
BE06
CC08h
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DB42
Abstract: No abstract text available
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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PDF
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
DB42
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6216 static ram
Abstract: T800 equivalent
Text: Œ \ H A R R HM-8816H I S S E M I C O N D U C T O R 16K x 8 High Speed Asynchronous CMOS Static RAM Module January 1992 Features Description • Low Standby Supply C u rre n t.800|iA • Low Operating Supply C urrent. 400mA
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HM-8816H
HM-8816H
HM-65262
6216 static ram
T800 equivalent
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EDH8808C
Abstract: EDH8808
Text: Electronic Designs Inc. 8816HCL-55/85/10 MILITARY 16K x 8 SRAM CM OS Vv7 ì J The ED H 8816H C L 16K x 8) is part o f a new fam ily o f High Speed Static RAM devices developed b y E lectronic Designs Inc. The 8816HC L uses the advanced EDI M EM O R YPACK packaging conce p t w hich m o un ts several LC C
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EDH8816HCL-55/85/10
EDH8816HCL
EDH8816HC
EDH8816HCL
EDH8808C
EDH8808
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Untitled
Abstract: No abstract text available
Text: a H M -8816H -8 H a r r is 16K x 8 High Speed Asynchronous CMOS Static RAM Module June 1989 P in o u t Features T O P V IE W • Low Standby Supply Current . 8 0 0 nA 28] VCC n c [T A12 Qf 27] W • W ide Operating T em perature R a n g e . -5 5 ° C to + 1 2 5 °C
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-8816H
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6216 static ram
Abstract: 6216 ram
Text: m U U HM-8816H HARRIS S E M I C O N D U C T O R 16K x 8 High Speed Asynchronous CMOS Static RAM Module January1992 Features Description The HM-8816H is a high speed, asynchronous CMOS static RAM module, based on a multilayer, co-fired, dual-in-line ceramic substrate and eight HM-65262 16K x 1 asynchro
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HM-8816H
HM-8816H
HM-65262
6216 static ram
6216 ram
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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4464 ram
Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Text: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT AC H I ID T M ITS U BISHI M OT O R O LA N AT IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH IB A N M O S,
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8816H
4464 ram
us4k
74C930
6116 ram 2k
74c920
6508 ram
4464 memory
6164 memory
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Untitled
Abstract: No abstract text available
Text: HM-QQ16H 3 HARIRIS 16K x 8 High Speed Asynchronous CMOS Static RAM Module Features Pinout • Low Standby S up ply C u rre n t. 800/jA T O P VIEW • Low O p erating S up ply C u rre n t.
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HM-QQ16H
800/jA
-8816H
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HM-65262
Abstract: HM-8816H HM-8816H-8 HM-8816H-9
Text: 3 H A R R I S H M - 8 8 1 6 H 16K x 8 High Speed Asynchronous CMOS Static RAM Module Features Pinout • Low Standby Sup ply C u rre n T O P VIEW • Low O p erating S up ply C u r re n A
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HM-8816H
800/jA
400mA
HM-65262
HM-8816H
HM-8816H-8
HM-8816H-9
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Untitled
Abstract: No abstract text available
Text: H M -8 8 1 6 H -8 £ H A R R I S 16 K x 8 High Speed Asynchronous June 1989 CMOS Static RAM Module P in o u t Features T O P V IE W • Low Standby Supply C urrent . 8 0 0 jjA • Low Operating Supply C u rre n t. 400m A
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