FMS2001QFN
Abstract: No abstract text available
Text: FMS2001QFN Preliminary Data Sheet 2.2 SPDT Reflective pHEMT MMIC Switch Description The FMS2001QFN is a low loss linear Single-Pole Double-Throw Antenna Switch designed for use in mobile handset applications. The switch is designed with one antenna port that can be routed to any one of the two RF ports.
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FMS2001QFN
FMS2001QFN
-70dBc
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hitachi metals
Abstract: Hitachi DSA002698
Text: Chip Multilayer Antenna Switch with LPF for E-GSM SHS-090LL HITACHI METALS HS-SHS-090LL-9802A Measurement Circuits Shape & Size TX RX 100p 3 .2 1 .2 100p 100p VC1 3 (4) (6) (7) 9p VC2 100p ANT VC1 VC2 TX->ANT 0V 3V ANT->RX 3V 0V 33n 120 Current (5) 2 .0Max .
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SHS-090LL
HS-SHS-090LL-9802A
880-915MHz
925-960MHz
HS-SHS-090LL-9811A
30PRm
hitachi metals
Hitachi DSA002698
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Untitled
Abstract: No abstract text available
Text: Atmel ATWINC1500 Single Chip IEEE 802.11 b/g/n Network Controller SOC with Integrated Flash Memory PRELIMINARY DATASHEET Description The Atmel WINC1500 is a single chip IEEE® 802.11 b/g/n RF, IoT Internet of Things Network Controller SoC. The WINC1500 most advanced mode is a single
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ATWINC1500
WINC1500
72Mbps
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DCS1800
Abstract: ECM009 EGSM900 PCS1900 GSM module circuit diagram GSM module BLOCK diagram GSM/BA5 Amplifier
Text: PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally matched for input and output High Efficiency EGSM=52%, DCS= 47% 8-pin, 6 X 6mm LGA, surface mounted module On Board band select and output power control
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ECM009
EGSM900
DCS1800
PCS1900
ECM009
900MHz,
75GHz,
PCS1900
GSM module circuit diagram
GSM module BLOCK diagram
GSM/BA5 Amplifier
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MCH182F104ZK
Abstract: gsm module datasheet DCS1800 ECM007 EGSM900 MCH185A180JK C5611 ecshi Power Amplifier Module for GSM MCH185A330JK
Text: PRELIMINARY DATA SHEET ECM007 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally input and output matched High Efficiency EGSM=55%, DCS= 50% Small size On Board band select and output power control
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ECM007
EGSM900
DCS1800
ECM007
SS-000374-000
AP-000513-000
MCH182F104ZK
gsm module datasheet
MCH185A180JK
C5611
ecshi
Power Amplifier Module for GSM
MCH185A330JK
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MARKING CODE 13w
Abstract: 13W MARKING
Text: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the
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RA13H8891MB
880-915MHz
RA13H8891MB
13-watt
915-MHz
Oct2011
MARKING CODE 13w
13W MARKING
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Avago A5208
Abstract: A5208 SMD TRANSISTOR MARKING 5c w ACPM-5208-TR1 ACPM5
Text: ACPM-5208 UMTS Band8 880-915MHz 3x3mm Power Amplifier Module Data Sheet Description The ACPM-5208 is a fully matched 10-pin surface mount module developed for UMTS EGSM. This power amplifier module operates in the 880-915MHz bandwidth. The ACPM-5208 meets stringent UMTS linearity requirements
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ACPM-5208
880-915MHz)
ACPM-5208
10-pin
880-915MHz
28dBm
50ohm
AV02-2409EN
Avago A5208
A5208
SMD TRANSISTOR MARKING 5c w
ACPM-5208-TR1
ACPM5
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TRF7003
Abstract: TRF8010
Text: TRF8010 QUESTION: Does the TRF8010 have band-limited matching on chip? Could it work at 400 MHz? Answer: The TRF8010/11 is inherently a relatively "broad-band" device but does have interstage matching on-chip. The GSM evaluation board is particularly matched for
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TRF8010
TRF8010
TRF8010/11
880-915MHz
900MHz
400MHz
TRF7003
400MHz.
TRF7003
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AD6521
Abstract: AD6523 AD6524 MSP430 gsm GSM Zero IF transceiver AD6522 gsm modulator dual band cdma gsm 1998 Diplexer GSM 900 GSM Transceiver ZERO-IF
Text: Analog Devices in GSM Introductory Section for February 2000 CD-ROM ADI GSM Intro - CDROM - February 2000 Slide 1 ADI in Communications ! ADI’s communications business is rapidly growing - now accounts for 40-45%of ADI’s business as compared to 24% in 1998
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Intr1880MHz
AD6524
msp430
AD6521
AD6523
AD6524
MSP430 gsm
GSM Zero IF transceiver
AD6522
gsm modulator
dual band cdma gsm 1998
Diplexer GSM 900
GSM Transceiver ZERO-IF
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: High Frequency Ceramic Solutions 875 MHz SPT4 GSM Antenna Switch Module P/N 0875AS43A1850 Detail Specification: 01/23/09 Page 1 of 4 General Specifications 0875AS43A1850 Part Number 2,000 Reel Quanity Operating Temperature -30 to +85°C Storage Temperature
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0875AS43A1850
GSM850/900
GSM1800/1900
880-915MHz
1710-1785/1850-1910MHz
GSM1800/1900-Tx
GSM1800/1900-Rx
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WSA-00100
Abstract: 29746
Text: WSA-00100 Dual Band Duplexer EGSM/DCS Description: The WSA-00100 is a dual band duplexer which allows for simplified dual band handset testing, or can be used in dual band base station applications. The assembly contains two duplexers. The first provides EGSM band
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WSA-00100
915MHz
960MHz
1785MHz
1880MHz
880-915MHz
1710-1785MHz
880-915MHz
925-960MHz
29746
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HSMI-V2KB0897M01-T
Abstract: LA 3660 la 4450 Hitachi DSA002700
Text: Jun.'10 TBE665-3 * Pb-free * Halogen and antimony-free 2mm Square Isolator P/N:HSMI-V2KB0897M01-T 1 (2) (3) (4) (5) (6) (7) (8) for UMTS BAND 8 Specification Dimensions Frequency 880-915 MHz Insertion Loss_1* 0.55 dB max Insertion Loss_2 0.65 dB max (1) Series code
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TBE665-3
HSMI-V2KB0897M01-T
97M01
04-Jun-10
880-915MHz
HSMI-V2KB0897M01-T
LA 3660
la 4450
Hitachi DSA002700
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transistor marking code H11S
Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to
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RA13H8891MB
880-915MHz
RA13H8891MB
13-watt
915-MHz
transistor marking code H11S
MOSFET Power Amplifier Module 900Mhz
RF MOSFET MODULE
H11S
RA13H8891MB-101
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GSM BTS antenna
Abstract: AD6600 Sawtek filters helical filter
Text: IF-Sampling Receiver Design Example “Using the AD6630, AD6600, AD6620” a 1 Design means Tradeoffs • Some Key Design Variables – – – – – – – – – a System conversion gain, gain distribution AGC versus fixed gain levels Overall filter requirements
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AD6630,
AD6600,
AD6620"
IS-136,
IS-95,
AD6600
AD6620
AD6630
GSM BTS antenna
Sawtek filters
helical filter
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ECM029
Abstract: GSM 900 module circuit diagram
Text: PRELIMINARY DATA SHEET ECM029 3V GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally matched for input and output 8-pin, 6 X 6mm LGA, surface mounted module On Board band select and output power control GPRS capable Class 8, 10 and 12, 4 TX slots max.
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ECM029
GSM900
ECM029
SS-000629-000
AP-000513-000
AP-000516-000
GSM 900 module circuit diagram
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RA60H1317M1
Abstract: RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-GEN-026-H Date : 18th Apr. 2003 Rev. date : 22th.Jun. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR
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AN-GEN-026-H
RA30H4452M
440-520MHz,
200pF,
RA60H1317M1
RA30H1317M
RA35H1516M
RA07H4047M
RA03M8087M
RA07H3340M
RA07H4452M
RA13H1317M
RA13H3340M
RA13H4047M
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BPF1608T2450HA3
Abstract: BPF1608T2450NA5 LTCC BPF1608T2450HA BPF1608T2450HA1 BPF1608T2450HA2 BPF1608T2450HA4 BPF1608T2450HA5 BPF1608T3600HA1 BPF1608T3600NA1
Text: Low Temperature Cofired Ceramic LTCC Series Electrical Characteristics Part Number BPF1608T2450HA 1 Pass Band GHz 2.4-2.5 Impedance (Ω) 50 VSWR 2 IL (dB) 2.0 Ripple (dB) Attenuation 0.6 40dB Min @ 880-915MHz 35dB Min @ 915-1250MHz 25dB Min @ 4800-5000MHz
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BPF1608T2450HA
880-915MHz
915-1250MHz
4800-5000MHz
7200-7500MHz
BPF1608T2450HA4
BPF1608T3600HA1
BPF1608T2450HA3
BPF1608T2450NA5
LTCC
BPF1608T2450HA1
BPF1608T2450HA2
BPF1608T2450HA4
BPF1608T2450HA5
BPF1608T3600HA1
BPF1608T3600NA1
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AD7015
Abstract: circuit diagram GSM transmitter receiver BT1075 BT107 BethelTronix crystal filter 7,8mhz
Text: TRFICTM FAMILY BTI BT1075 61 62 64 63 66 65 67 68 69 70 72 71 73 74 75 76 77 58 4 57 5 56 55 6 7 8 12 13 50 49 48 BT1075 14 15 16 47 46 45 17 18 44 43 19 41 40 37 38 39 36 35 34 33 32 31 30 29 28 27 42 26 20 52 51 BTI 11 gndsc gndsc rxout_in rxout_ip rxout_qn
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BT1075
AD7015
circuit diagram GSM transmitter receiver
BT1075
BT107
BethelTronix
crystal filter 7,8mhz
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ODV-065R14E17K-G
Abstract: ODV2-065R18J-G 0/ODV-065R14E17K-G V/ODV-065R18EK-G Comba Telecom TA-E12FDA-A ODV-065R17E18K-G ODV-065R17B ODV-065R15B15J15J ODV-065R15E18K-G
Text: Antenna & Subsystem Product Catalog Ver2.1 Dec 2012 Antenna & Subsystem Contents Legal
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SE-167
ODV-065R14E17K-G
ODV2-065R18J-G
0/ODV-065R14E17K-G
V/ODV-065R18EK-G
Comba Telecom
TA-E12FDA-A
ODV-065R17E18K-G
ODV-065R17B
ODV-065R15B15J15J
ODV-065R15E18K-G
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RA60H1317M1
Abstract: C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-GEN-026-G Date : 18th Apr. 2003 Rev. date : 7th Jan. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR
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AN-GEN-026-G
RA30H4452M
440-520MHz,
200pF,
RA60H1317M1
C100pF
4500 MOS
RA13H3340M
mitsubishi rf power module
RA30H1317M
RA07H4047M
RA35H1516M
RA07H3340M
RA07H4452M
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet FMS2002QFN 2.2 SP3T Reflective pHEMT MMIC Switch Description The FMS2002QFN is a linear high power Single-Pole Three-Throw MMIC Antenna Switch designed for use in Dual-band handsets GSM900 and GSM1800/1900 combinations. The switch is designed with one antenna port that can be routed to
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FMS2002QFN
FMS2002QFN
GSM900
GSM1800/1900
-73dBc
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ACPM-7371
Abstract: 7371 smd RH21 ACPM7371 ACPM-7371-TR1 ACPM-7381 J-STD-020B J-STD-033
Text: ACPM-7371 UMTS 4x4 Power Amplifier 880-915MHz Data Sheet Description Features The ACPM-7371, a Wide-band Code Division Multiple Access(WCDMA) Power Amplifier (PA), is a fully matched 10-pin surface mount module developed for WCDMA handset applications. This power amplifier module is
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ACPM-7371
880-915MHz)
ACPM-7371,
10-pin
880-915MHz
ACPM7371
28dBm.
ACPM-7371
7371 smd
RH21
ACPM-7371-TR1
ACPM-7381
J-STD-020B
J-STD-033
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090E
Abstract: No abstract text available
Text: 900MHz Band Chip Multilayer Low Pass Filter Model No. SLL-090E Equivalent Circuits Shape & Size > a> \r o x w //////, pH %^ Ol >t 3.2 4 » € 6 U I-« 4 In 6 Out 1,2 3,5 Ground > >1 unit mm Specifications Pass Band Frequency Insertion Loss Return Loss (Pass Band)
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900MHz
SLL-090E
880-915MHz
090E
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