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    88-108 MHZ POWER W Search Results

    88-108 MHZ POWER W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    88-108 MHZ POWER W Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    88-108

    Abstract: an power 88-108 mhz 88-108 mhz w power 88-108 mhz Power w
    Text: FM 175 175 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is designed for pulsed systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest


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    88-108 mhz w power

    Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
    Text: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.


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    100Ma 88-108 mhz w power 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor PDF

    NSBP-108

    Abstract: an power 88-108 mhz
    Text: Connectorized NSBP-108+ NSBP-108 Band Stop Filter 88 to 108 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -55 C to 100 C -55oC to 100oC 0.5W at 25oC o o • High FM Frequency Rejection • Good Return Loss, 20 dB Typ @ Pass Band


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    NSBP-108+ NSBP-108 -55oC 100oC FF967 2002/95/EC) M98898 EDU-0409 NSBP-108 an power 88-108 mhz PDF

    M97032

    Abstract: M9703
    Text: Coaxial NEW! Band Stop Filter NSBP-108 88 to 108 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • High FM Frequency Rejection • Good Return Loss, 20 dB Typ @ Pass Band -55 C to 100 C -55oC to 100oC 0.5W at 25oC o


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    -55oC 100oC NSBP-108 FF967 Frequenc1000 NSBP-108 M97032 EDR-7403 M9703 PDF

    MW314

    Abstract: MW300
    Text: MW314 VCOS FOR CUSTOM APPLICATIONS SPECIFICATIONS Frequency Range: 2132 MHz @ 0.5V 2225 MHz @ 3.0V Phase Noise: @10 kHz: ≤ -88 dBc/Hz @100 kHz: ≤ -108 dBc/Hz Tuning Sensitivity: ≥ 37.2 MHz/V Spurious Response 2nd Harmonics : ≥ -18 dBc Output Power:


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    MW314 MW300 PDF

    blf574

    Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
    Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract


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    AN10714 BLF574 BLF574, AN10714 Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d PDF

    88-108 rf amplifier

    Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
    Text: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.


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    AN1229 SD2932 SD2932. SD2932 88-108 rf amplifier 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k PDF

    blf578

    Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
    Text: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power


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    AN10800 BLF578 BLF578, AN10800 BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X PDF

    Untitled

    Abstract: No abstract text available
    Text: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°


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    FMB150 FMB150 112x45° PDF

    4cx20000d-9015

    Abstract: 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015
    Text: The EIMAC 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an electromechanical structure which provides high RF operating efficiency and low RF losses. The


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    4CX20 000D/9015 SK-360 SK-336 000D/ 000D/9015 4cx20000d-9015 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015 PDF

    TP9383

    Abstract: No abstract text available
    Text: , L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. . TELEPHONE: 973 376-2922 TP9383 NPN RF POWER TRANSISTOR DESCRIPTION: TP9383 is a Common Emitter Device Designed for FM Broadcast Transmitter Applications in the 88 to 108 MHz Band. FEATURES INCLUDE:


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    TP9383 TP9383 72D/lfl p45/6 110/e, PDF

    FMB150

    Abstract: an power 88-108 mhz ASI10588
    Text: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and high VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°


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    FMB150 FMB150 112x45° an power 88-108 mhz ASI10588 PDF

    4cx20000d-9015

    Abstract: 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c
    Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CX20,000D/9015 The Eimac 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an


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    4CX20 000D/9015 000D/9015 gs\carolyn\Desktop\Objects\4cx20000d-9015 4cx20000d-9015 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c PDF

    neosid* 10k

    Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


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    AN1229 SD2932 SD2932. SD2932 neosid* 10k neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz PDF

    SK300A

    Abstract: 88-108 mhz Power amplifier w 4CX12
    Text: SVETLANA TECHNICAL DATA 4CX12,000A/8989 Radial Beam Power Tetrode T he Svetlana 4CX12,000A/8989 is an air cooled power tetrode designed for audio and radio frequency applications. It is particularly well-suited for use in VHF FM broadcast transmitters in the Band II 88-108 MHz frequency range and has full performance ratings to 250MHz. The Svetlana


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    4CX12 00A/8989 00A/8989 250MHz. SK300A 88-108 mhz Power amplifier w PDF

    ATC100B151J

    Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


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    MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT PDF

    MRF6VP2600H

    Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


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    MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT PDF

    mrf6vp2600h

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


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    MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H PDF

    MRF6VP2600H

    Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


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    MRF6VP2600H MRF6VP2600HR6 100fficers, MRF6VP2600H ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k PDF

    "Voltage Controlled Oscillators"

    Abstract: VL800 VL700 Voltage controlled oscillators Temex vlb VL1025 VL730 VL430 VL460 VL500
    Text: VOLTAGE CONTROLLED OSCILLATORS Contents TIME &FREQUENCY VOLTAGE CONTROLLED OSCILLATORS Contents PAGE SURFACE MOUNT LOW COST 430 - 2500 MHZ 3-5 SURFACE MOUNT LOW COST LOW PHASE NOISE 3-7 3-4 Vol. 2 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex-components.com


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    PDF

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


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    MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi PDF

    4CX15000A

    Abstract: 4cx15000 scans-048 DSAGER00031
    Text: Svetlana 4CX15000A/8281 Radial Beam Power Tetrode lie Svetlana 4C X 15000A /8281 is designed for audio and radio frequency applications. It is particularly well-suited for use in VHF FM broadcast transmitters in the Band II 88 108 MHz frequency range. The Svetlana


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    4CX15000A/8281 5000A 4CX15000A 4cx15000 scans-048 DSAGER00031 PDF

    88-108 mhz Power amplifier w

    Abstract: DSAGER00032 M/KT 9019
    Text: YC130/9019 Radial Beam Power Tetrode he Svetlana YC13 0 /9 0 19 is designed for use in VHF FM transmitters in the Band II 88-108 MHz frequency range. The YC130/9019 is also an excellent choice for plate-modu­ lated Class C power amplifiers or in Class AB, audio frequency applications. The


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    YC130/9019 YC130/9019 88-108 mhz Power amplifier w DSAGER00032 M/KT 9019 PDF

    TPV3100

    Abstract: TPV364 TP9380 244c-01 TP9383 TPV-3100 TPV-595A TPV3250B TPV5055B TPV385
    Text: RI CHARDS ON ELECTRONICS " T -i. ijw .m ,r| n n - 2>|^Ol u. •.v 14E DI 7734ÖC|ä Q0G0Sfl2 ^ - - 7— dH T h r* t iMrr i RF Transistors tor Broadcast Applications Motorola/TRW 88-108 MHz, FM Broadcast Band Device Pout Output PowerWatts Pm Input Power


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    TP9380 TP9383 TP9390 TPV394A TPV364 TPV385 TPV375 TPV387 TPV376 TPV3100 TPV3100 244c-01 TPV-3100 TPV-595A TPV3250B TPV5055B PDF