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    88-108 MHZ POWER W Search Results

    88-108 MHZ POWER W Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TMS320VC5506GBB Texas Instruments Low power C55x fixed point DSP - 108MHz 179-NFBGA -40 to 85 Visit Texas Instruments
    TMS320VC5506ZAY Texas Instruments Low power C55x fixed point DSP - 108MHz 179-NFBGA -40 to 85 Visit Texas Instruments
    TMS320VC5506ZAYR Texas Instruments Low power C55x fixed point DSP - 108MHz 179-NFBGA -40 to 85 Visit Texas Instruments
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    88-108 MHZ POWER W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    88-108

    Abstract: an power 88-108 mhz 88-108 mhz w power 88-108 mhz Power w
    Text: FM 175 175 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is designed for pulsed systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest


    Original     		PDF

    88-108 mhz w power

    Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
    Text: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.


    Original     		PDF 100Ma 88-108 mhz w power 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor

    NSBP-108

    Abstract: an power 88-108 mhz
    Text: Connectorized NSBP-108+ NSBP-108 Band Stop Filter 88 to 108 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -55 C to 100 C -55oC to 100oC 0.5W at 25oC o o • High FM Frequency Rejection • Good Return Loss, 20 dB Typ @ Pass Band


    Original     		PDF NSBP-108+ NSBP-108 -55oC 100oC FF967 2002/95/EC) M98898 EDU-0409 NSBP-108 an power 88-108 mhz

    M97032

    Abstract: M9703
    Text: Coaxial NEW! Band Stop Filter NSBP-108 88 to 108 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • High FM Frequency Rejection • Good Return Loss, 20 dB Typ @ Pass Band -55 C to 100 C -55oC to 100oC 0.5W at 25oC o


    Original     		PDF -55oC 100oC NSBP-108 FF967 Frequenc1000 NSBP-108 M97032 EDR-7403 M9703

    MW314

    Abstract: MW300
    Text: MW314 VCOS FOR CUSTOM APPLICATIONS SPECIFICATIONS Frequency Range: 2132 MHz @ 0.5V 2225 MHz @ 3.0V Phase Noise: @10 kHz: ≤ -88 dBc/Hz @100 kHz: ≤ -108 dBc/Hz Tuning Sensitivity: ≥ 37.2 MHz/V Spurious Response 2nd Harmonics : ≥ -18 dBc Output Power:


    Original     		PDF MW314 MW300

    blf574

    Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
    Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract


    Original     		PDF AN10714 BLF574 BLF574, AN10714 Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d

    300w class ab amplifier

    Abstract: 88-108 an power 88-108 mhz RPAP88108M700 300w amplifier power amplifier 88-108
    Text: RPAP88108M700 Preliminary Solid State Broadband High Power Pallet Amplifier 88-108 MHz, 700W The RPAP88108M700 is a Class C Pallet Amplifier providing 700 Watts CW Power output. This pallet features MOSFET Transistors and is matched for 50-ohms input and output.


    Original     		PDF RPAP88108M700 RPAP88108M700 50-ohms -30dB, 55Vdc 300w class ab amplifier 88-108 an power 88-108 mhz 300w amplifier power amplifier 88-108

    88-108 rf amplifier

    Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
    Text: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 88-108 rf amplifier 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k

    UMZ-1197-D16

    Abstract: No abstract text available
    Text: CONFIDENTIAL MIN. Frequency, MHz 4130 Power Output, dBm -3.0 TYP. MAX. 4730 +3.0 -15 -10 @ Offset = 1kHz -60 -55 @ Offset = 10kHz -88 -83 @ Offset = 100kHz -108 -103 @ Offset = 1MHz -128 -123 Pushing, MHz/V 5 8 Pulling, MHz p-p, @12dBr, all phases 3 5 Harmonics, dBc


    Original     		PDF 10kHz 100kHz 12dBr, UMZ-1197-D16

    Untitled

    Abstract: No abstract text available
    Text: CONFIDENTIAL MIN. Frequency, MHz 4340 Power Output, dBm -3.0 TYP. MAX. 5065 +3.0 -15 -10 @ Offset = 1kHz -60 -55 @ Offset = 10kHz -88 -83 @ Offset = 100kHz -108 -103 @ Offset = 1MHz -128 -123 @ Offset = 10MHz -148 -143 Pushing, MHz/V 4.0 12.0 Pulling, MHz p-p, @12dBr, all phases


    Original     		PDF 10kHz 100kHz 10MHz 12dBr, UMZ-1138-D16

    blf578

    Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
    Text: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power


    Original     		PDF AN10800 BLF578 BLF578, AN10800 BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X

    Untitled

    Abstract: No abstract text available
    Text: CONFIDENTIAL MIN. Frequency, MHz 5394 Power Output, dBm -2.5 TYP. MAX. 5494 -2.0 +2.5 -25 -12 @ Offset = 1kHz -68 -63 @ Offset = 10kHz -93 -88 @ Offset = 100kHz -113 -108 @ Offset = 1MHz -133 -128 @ Offset = 10MHz -153 -148 Pushing, MHz/V 8 16 Pulling, MHz p-p, @12dBr, all phases


    Original     		PDF 10kHz 100kHz 10MHz 12dBr, UMZ-T2-449-O16

    Untitled

    Abstract: No abstract text available
    Text: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°


    Original     		PDF FMB150 FMB150 112x45°

    4cx20000d-9015

    Abstract: 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015
    Text: The EIMAC 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an electromechanical structure which provides high RF operating efficiency and low RF losses. The


    Original     		PDF 4CX20 000D/9015 SK-360 SK-336 000D/ 000D/9015 4cx20000d-9015 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015

    TP9383

    Abstract: No abstract text available
    Text: , L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. . TELEPHONE: 973 376-2922 TP9383 NPN RF POWER TRANSISTOR DESCRIPTION: TP9383 is a Common Emitter Device Designed for FM Broadcast Transmitter Applications in the 88 to 108 MHz Band. FEATURES INCLUDE:


    Original     		PDF TP9383 TP9383 72D/lfl p45/6 110/e,

    4CX5000A

    Abstract: SK306 88-108 rf amplifier
    Text: Svetlana 4CX5000A/8170 Radial Beam Power Tetrode T he Svetlana 4CX5000A/8170 is designed for audio and radio frequency applications. It is particularly well-suited for use in VHF FM broadcast transmitters in the Band II 88-108 MHz frequency range. The Svetlana 4CX5000A/


    Original     		PDF 4CX5000A/8170 4CX5000A/8170 4CX5000A/ 4CX5000A SK306 88-108 rf amplifier

    FMB150

    Abstract: an power 88-108 mhz ASI10588
    Text: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and high VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°


    Original     		PDF FMB150 FMB150 112x45° an power 88-108 mhz ASI10588

    KRAUS

    Abstract: No abstract text available
    Text: CONFIDENTIAL MIN. TYP. MAX. Frequency, MHz 6600 Power Output, dBm -5.0 -2.0 +4.0 ½ -10 -15 -10 -15 -5 @ Offset = 1kHz -63 -58 @ Offset = 10kHz -88 -83 @ Offset = 100kHz -108 -103 @ Offset = 1MHz -128 -123 @ Offset = 10MHz -148 -143 4 10 Frequency Power Output, dBm


    Original     		PDF 10kHz 100kHz 10MHz 12dBr, UMZ-T2-447-O16 KRAUS

    4cx20000d-9015

    Abstract: 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c
    Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CX20,000D/9015 The Eimac 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an


    Original     		PDF 4CX20 000D/9015 000D/9015 gs\carolyn\Desktop\Objects\4cx20000d-9015 4cx20000d-9015 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c

    inductor vk200

    Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 inductor vk200 RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier

    neosid* 10k

    Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 neosid* 10k neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz

    TP9383

    Abstract: "RF Power Transistor" emitter FM RF IC fm broadcast transmitter
    Text: TP9383 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TP9383 is a Common Emitter Device Designed for FM Broadcast Transmitter Applications in the 88 to 108 MHz Band. FEATURES INCLUDE: PACKAGE STYLE 500 4L FLG • High Efficiency • Gold Metallization • Emitter Ballasting


    Original     		PDF TP9383 TP9383 "RF Power Transistor" emitter FM RF IC fm broadcast transmitter

    Philips Semiconductors RF Power Modules

    Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
    Text: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5


    OCR Scan     		PDF OT132B OT288C OT183A Philips Semiconductors RF Power Modules RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"

    4CX15000A

    Abstract: 4cx15000 scans-048 DSAGER00031
    Text: Svetlana 4CX15000A/8281 Radial Beam Power Tetrode lie Svetlana 4C X 15000A /8281 is designed for audio and radio frequency applications. It is particularly well-suited for use in VHF FM broadcast transmitters in the Band II 88 108 MHz frequency range. The Svetlana


    OCR Scan     		PDF 4CX15000A/8281 5000A 4CX15000A 4cx15000 scans-048 DSAGER00031