Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    877 TRANSISTOR Search Results

    877 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    877 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c143t

    Abstract: A143T FMG13 imb7a 94S-849-A143T
    Text: Transistors IMB7A UMH7N / FMG13 / IMH7A 94S-849-A143T (94S-877-C143T) 580


    Original
    PDF FMG13 94S-849-A143T) 94S-877-C143T) c143t A143T imb7a 94S-849-A143T

    Battery box

    Abstract: No abstract text available
    Text: 7850 E. Gelding Drive Scottsdale, AZ 85260 USA 1-877-2BUYNKK 228-9655 Phone 480.991.0942 Fax 480.998.1435 www.nkksmartswitch.com 06–07 Demonstration Kit User Guide CONTENTS NOTES Introduction . . . . . . . . . . . . . . . . . . . 2 Shipping Contents . . . . . . . . . . . . . . 3


    Original
    PDF 1-877-2BUYNKK 150mA Battery box

    C144* transistor

    Abstract: C144E transistor a144* transistor C114y c102 TRANSISTOR 96-415-C114E a114* transistor UMW10 c114e FMW1
    Text: Transistors FMG12 IMD14 96-417-C323T (96-470-IMD14) 576 Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 (94S-389-A41) (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors UMA10N / FMA10A / IMB17A UMG10N


    Original
    PDF FMG12 IMD14 96-417-C323T) 96-470-IMD14) 94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) UMA10N C144* transistor C144E transistor a144* transistor C114y c102 TRANSISTOR 96-415-C114E a114* transistor UMW10 c114e FMW1

    c102 TRANSISTOR

    Abstract: c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor
    Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (dual transistors) IMX17 FFeatures 1) Two 2SD1484K chips in an SMT


    Original
    PDF 94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMX17 2SD1484K 500mA 96-523-D15) F04-C101) c102 TRANSISTOR c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor

    a144* transistor

    Abstract: a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor
    Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (isolated dual transistors) IMT17 FFeatures 1) Two 2SA1036K chips in an SMT


    Original
    PDF 94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMT17 2SA1036K 500mA 94S-366-A032) 96-427-C022) a144* transistor a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor

    C942

    Abstract: C943 bc 877 C62702-C941 C62702-C943 C62702-C942 bc876 bc880 bc 880 bc 878
    Text: PNP Silicon Darlington Transistors BC 876 … BC 880 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 875, BC 877, BC 879 NPN ● Type Marking Ordering Code BC 876 BC 878 BC 880 – C62702-C943


    Original
    PDF C62702-C943 C62702-C942 C62702-C941 C942 C943 bc 877 C62702-C941 C62702-C943 C62702-C942 bc876 bc880 bc 880 bc 878

    hFE-1000 BC

    Abstract: C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin
    Text: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 875 BC 877 BC 879


    Original
    PDF C62702-C853 C62702-C854 C62702-C855 hFE-1000 BC C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin

    bc 877

    Abstract: C853 C62702-C853 C62702-C854 C62702-C855 marking bc BC879 bc 879 BC875
    Text: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● Type Marking Ordering Code BC 875 BC 877 BC 879 – C62702-C853 C62702-C854 C62702-C855


    Original
    PDF C62702-C853 C62702-C854 C62702-C855 bc 877 C853 C62702-C853 C62702-C854 C62702-C855 marking bc BC879 bc 879 BC875

    carlogavazzi

    Abstract: K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT
    Text: Overview2004CA.qk 12/16/04 11:29 AM Page 1 Gross Automation 877 268-3700 • www.carlogavazzisales.com · sales@grossautomation.com Overview2004CA.qk 12/16/04 11:29 AM Page 2 CARLO GAVAZZI – A Global Force In Offering the Complete Package CARLO GAVAZZI offers a vast array of high quality products, which provide you the optimum solutions to your


    Original
    PDF Overview2004CA yo1500 GH64404412 G81104406 G82104406 G85101101 G85102201 G85103301 G34485234 carlogavazzi K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT

    TRANSISTOR C802

    Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original
    PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw

    C801

    Abstract: 1/db3 c801
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS


    Original
    PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801

    TL225

    Abstract: ATC100A6R2CW150X
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original
    PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X

    TRANSISTOR C802

    Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original
    PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104

    c102 TRANSISTOR

    Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
    Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS


    Original
    PDF PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113

    DC60S3

    Abstract: DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7
    Text: Series DC60 3-7Amp • 60 Vdc - DC OUTPUT • Cost Effective • Industry Standard Package • AC or DC Control • Panel M ount MODEL NUMBERS Bipolar transistor outputs are available in 3, 5 and 7 amp ratings. Cost-effective relays offer 4000 Volt isolation and


    Original
    PDF DC60S3 DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7 DC60S3 DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7

    702 TRANSISTOR

    Abstract: DC load 8540 DC60S3 DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7
    Text: Series DC60 3-7Amp • 60 Vdc • DC Output • Cost Effective • Industry Standard Package • AC or DC Control • Panel M ount MODEL NUMBERS Bipolar transistor outputs are available in 3, 5 and 7 amp ratings. Cost-effective relays offer 4000 Volt isolation and


    Original
    PDF DC60S3 DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7 702 TRANSISTOR DC load 8540 DC60S3 DC60S5 DC60S7 DC60SA3 DC60SA5 DC60SA7

    transistor k 975

    Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875
    Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors


    OCR Scan
    PDF 023SbOS T-33-29 Q62702-D902 Q62702-D903 Q62702-D904 Q62902-B63 Q62902-B62 25imi BD977 transistor k 975 c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875

    c 879 transistor

    Abstract: darlington bd 876 bd 879 transistor BD 468 S BO-87 877 transistor
    Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 8 7 9 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 4 1 8 6 9 , sheet 4 . These darlington transistors


    OCR Scan
    PDF 023SbOS 0QGH421 T-33-29 25roa c 879 transistor darlington bd 876 bd 879 transistor BD 468 S BO-87 877 transistor

    BC87

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Darlington Transistors • BC 876 . BC 880 High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 875, BC 877, BC 879 NPN Type Marking BC 876 BC 878 BC 880 Ordering Code


    OCR Scan
    PDF C62702-C943 C62702-C942 C62702-C941 235b05 BC876 BC87

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistors BC 875 . BC 879 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 876, BC 878 BC 880 PNP Type Marking BC 875 BC 877 BC 879 Ordering Code PinClonfiguration 1 2 3 Package1)


    OCR Scan
    PDF C62702-C853 C62702-C854 C62702-C855 EHP0022B 120blb CHP00232 fl235b05

    strelaclock

    Abstract: widerstandsnetzwerke service-mitteilungen robotron VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN "service-mitteilungen" servicemitteilungen RFT lautsprecher Mitteilung VEB RFT rft servicemitteilung
    Text: Bellage zur SM 17-19/90_ ET-Eatalog 6, S elte 9 870 1997 875 1998 871 1999 22,0 33,0 100,0 Kohm N n 5 % 5 % 5 % S2-23-I S2-23-I S2-23-I Widerstandsnetzwerke 877 873 878 870 874 875 871 872 873 874 1903 1904 1905 1907 1906 1908 1909 1910


    OCR Scan
    PDF S2-23-I S2-23-I Bl-14/12 strelaclock widerstandsnetzwerke service-mitteilungen robotron VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN "service-mitteilungen" servicemitteilungen RFT lautsprecher Mitteilung VEB RFT rft servicemitteilung

    BC875

    Abstract: BC879 c 879 transistor BC876 BC880 BC879 darlington BC877 BC878
    Text: b SE D • N AUER bbS3^31 BC875 BC877 BC879 APX []027hG2 SI D PHILIPS/DISCRETE V SMALL-SIGNAL DARLINGTON TRANSISTORS NPN epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope with an integrated diode and resistor. They can be used for general purpose low frequency applications and as relay drivers etc.


    OCR Scan
    PDF 027hG2 BC875 BC877 BC879 BC876, BC878, BC880. DD27hD4 BC879 c 879 transistor BC876 BC880 BC879 darlington BC878

    Untitled

    Abstract: No abstract text available
    Text: □RE D • bbS3^31 □D27bD2 SID H A P X BC875 BC877 BC879 N AUER PHILIPS/DISCRETE SM ALL-SIGNAL DARLINGTON TRANSISTORS NPN epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope with an integrated diode and resistor. They can be used for general purpose low frequency applications and as relay drivers etc.


    OCR Scan
    PDF D27bD2 BC875 BC877 BC879 BC876, BC878, BC880.

    Untitled

    Abstract: No abstract text available
    Text: BC875 BC877 BC879 SMALL-SIGNAL DARLINGTON TRANSISTORS NPN e p itaxia l sm all-serial D a rlington transistors, each in a plastic TO -92 package w ith an integrated diode and resistor. They can be used fo r general purpose low frequency applications and as relay drivers etc.


    OCR Scan
    PDF BC875 BC877 BC879 BC876, BC878, BC880. BC875